IXTT96N15P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTT96N15P  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 480 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 96 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: TO268

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IXTT96N15P datasheet

 ..1. Size:170K  ixys
 ixtq96n15p ixtt96n15p.pdf pdf_icon

IXTT96N15P

IXTQ 96N15P VDSS = 150 V PolarHTTM IXTT 96N15P ID25 = 96 A Power MOSFET RDS(on) 24 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 M 150 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C96 A G D (TAB)

 7.1. Size:198K  ixys
 ixth96n20p ixtt96n20p ixtq96n20p.pdf pdf_icon

IXTT96N15P

IXTH 96N20P VDSS = 200 V PolarHTTM IXTQ 96N20P ID25 = 96 A Power MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 200 V S (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGSS Continous 20 V TO-3P (IXTQ) VGSM Transient

 7.2. Size:239K  ixys
 ixth96n20p ixtq96n20p ixtt96n20p.pdf pdf_icon

IXTT96N15P

IXTH 96N20P VDSS = 200 V PolarHTTM IXTQ 96N20P ID25 = 96 A Power MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25 C to 150 C 200 V S (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M 200 V VGSS Continous 20 V TO-3P (IXTQ) VGSM Transient

Otros transistores... IXTT75N10L2, IXTT75N15, IXTT80N20L, IXTT82N25P, IXTT88N15, IXTT88N30P, IXTT8P50, IXTT90P10P, 4N60, IXTT96N20P, IXTU01N100D, IXTU02N50D, IXTU05N100, IXTU12N06T, IXTU1N80P, IXTU1R4N60P, IXTU2N80P