IXTT96N15P Datasheet and Replacement
Type Designator: IXTT96N15P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 480 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 96 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 150 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TO268
IXTT96N15P substitution
IXTT96N15P Datasheet (PDF)
ixtq96n15p ixtt96n15p.pdf
IXTQ 96N15P VDSS = 150 VPolarHTTMIXTT 96N15P ID25 = 96 APower MOSFET RDS(on) 24 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 150 VVDGR TJ = 25 C to 150 C; RGS = 1 M 150 VVGSS Continuous 20 VVGSM Transient 30 VID25 TC = 25 C96 A GD(TAB)
ixth96n20p ixtt96n20p ixtq96n20p.pdf
IXTH 96N20P VDSS = 200 VPolarHTTMIXTQ 96N20P ID25 = 96 APower MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25 C to 150 C 200 VS(TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGSS Continous 20 VTO-3P (IXTQ)VGSM Transient
ixth96n20p ixtq96n20p ixtt96n20p.pdf
IXTH 96N20P VDSS = 200 VPolarHTTMIXTQ 96N20P ID25 = 96 APower MOSFET IXTT 96N20P RDS(on) 24 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25 C to 150 C 200 VS(TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 200 VVGSS Continous 20 VTO-3P (IXTQ)VGSM Transient
Datasheet: IXTT75N10L2 , IXTT75N15 , IXTT80N20L , IXTT82N25P , IXTT88N15 , IXTT88N30P , IXTT8P50 , IXTT90P10P , 10N65 , IXTT96N20P , IXTU01N100D , IXTU02N50D , IXTU05N100 , IXTU12N06T , IXTU1N80P , IXTU1R4N60P , IXTU2N80P .
History: CEN2301 | STD35NF3LLT4 | IXTT140N10P | SSF2341E | IRFSL7530PBF | NTMFS4943NT1G | SUM90N06-4M4P
Keywords - IXTT96N15P MOSFET datasheet
IXTT96N15P cross reference
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IXTT96N15P lookup
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History: CEN2301 | STD35NF3LLT4 | IXTT140N10P | SSF2341E | IRFSL7530PBF | NTMFS4943NT1G | SUM90N06-4M4P
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