IXTV200N10TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTV200N10TS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 550 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 200 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 76 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: PLUS220SMD
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IXTV200N10TS Datasheet (PDF)
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Otros transistores... IXTU5N50P , IXTV02N250S , IXTV03N400S , IXTV102N20T , IXTV110N25TS , IXTV18N60P , IXTV18N60PS , IXTV200N10T , IRF520 , IXTV22N50P , IXTV22N50PS , IXTV22N60P , IXTV22N60PS , IXTV230N085T , IXTV230N85TS , IXTV250N075T , IXTV250N075TS .
History: BUK9606-55B | BUK9608-55A | SSW85R105SFD | TMA12N65H | HY3312M | NDS0610
History: BUK9606-55B | BUK9608-55A | SSW85R105SFD | TMA12N65H | HY3312M | NDS0610



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