IXTV200N10TS MOSFET Datasheet: N-Ch, 100V, 200A. Full specification with pinout and replacement list

IXTV200N10TS Specs and Replacement

   Type Designator: IXTV200N10TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 550 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 76 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: PLUS220SMD

IXTV200N10TS substitution

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IXTV200N10TS datasheet

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Preliminary Technical Information IXTV250N075T VDSS = 75 V TrenchMVTM IXTV250N075TS ID25 = 250 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings PLUS220 (IXTV) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V G D D (TAB) S ... See More ⇒

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Preliminary Technical Information IXTV 280N055T VDSS = 55 V TrenchMVTM IXTV 280N055TS ID25 = 280 A Power MOSFET RDS(on) 3.2 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings PLUS220 (IXTV) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V G D D (TAB) ... See More ⇒