IXTY02N120P Todos los transistores

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IXTY02N120P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTY02N120P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 33 W

Tensión drenaje-fuente (Vds): 1200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 1600 nS

Resistencia drenaje-fuente RDS(on): 75 Ohm

Empaquetado / Estuche: TO252

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IXTY02N120P Datasheet (PDF)

1.1. ixty02n120p ixtp02n120p.pdf Size:123K _ixys

IXTY02N120P
IXTY02N120P

Advance Technical Information PolarTM VDSS = 1200V IXTP02N120P ID25 = 0.2A Power MOSFET IXTY02N120P ? ? RDS(on) ? ? ? 75? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings G D D (Tab) S VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M? 1200 V TO-252 (IXTY) VGSS Continuous 20 V VGSM Transient 30 V G ID2

3.1. ixtp02n50d ixtu02n50d ixty02n50d.pdf Size:94K _ixys

IXTY02N120P
IXTY02N120P

IXTP 02N50D VDSS = 500 V High Voltage MOSFET IXTU 02N50D ID25 = 200 mA N-Channel, Depletion Mode IXTY 02N50D ? RDS(on) = 30 ? ? ? ? Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSX TJ = 25C to 150C 500 V VDGX TJ = 25C to 150C 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V G D S IDSS TC = 25C; TJ = 25C to 150C 200 mA IDM TC =

 5.1. ixtu01n80 ixty01n80.pdf Size:66K _ixys

IXTY02N120P
IXTY02N120P

IXTU 01N80 VDSS = 800 V High Voltage MOSFET IXTY 01N80 ID25 = 100mA N-Channel, Enhancement Mode ? RDS(on) = 50 ? ? ? ? Symbol Test Conditions Maximum Ratings TO-251 AA (IXTU) 01N100 VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V G VGS Continuous 20 V D D (TAB) S VGSM Transient 30 V ID25 TC = 25C; TJ = 25C to 150C 100 mA IDM TC = 25C, pulse width

5.2. ixtp01n100d ixtu01n100d ixty01n100d.pdf Size:94K _ixys

IXTY02N120P
IXTY02N120P

IXTP 01N100D VDSS = 1000 V High Voltage MOSFET IXTU 01N100D ID25 = 100 mA N-Channel, Depletion Mode IXTY 01N100D ? RDS(on) = 110 ? ? ? ? Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSX TJ = 25C to 150C 1000 V VDGX TJ = 25C to 150C 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S IDSS TC = 25C; TJ = 25C to 150C 100 mA I

 5.3. ixtu01n100 ixty01n100.pdf Size:85K _ixys

IXTY02N120P
IXTY02N120P

IXTU 01N100 VDSS = 1000 V High Voltage MOSFET IXTY 01N100 ID25 = 100mA N-Channel, Enhancement Mode ? RDS(on) = 80 ? ? ? ? Symbol Test Conditions Maximum Ratings TO-251 AA (IXTU) 01N100 VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G VGS Continuous 20 V D D (TAB) S VGSM Transient 30 V ID25 TC = 25C; TJ = 25C to 150C 100 mA IDM TC = 25C, pulse

5.4. ixty08n50d2-ixta08n50d2-ixtp08n50d2.pdf Size:177K _ixys

IXTY02N120P
IXTY02N120P

Preliminary Technical Information Depletion Mode VDSX = 500V IXTY08N50D2 MOSFET ID(on) > 800mA IXTA08N50D2 ? ? RDS(on) ? 4.6? ? ? ? ? ? ? IXTP08N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25C to 150C 500 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25C60 W D (Tab) TJ - 55 ... +150 C TJM 150 C

 5.5. ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf Size:177K _ixys

IXTY02N120P
IXTY02N120P

Preliminary Technical Information Depletion Mode VDSX = 1000V IXTY08N100D2 MOSFET ID(on) > 800mA IXTA08N100D2 ? ? RDS(on) ? 21? ? ? ? ? ? ? IXTP08N100D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25C to 150C 1000 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25C60 W D (Tab) TJ - 55 ... +150 C TJM 15

Otros transistores... IXTX600N04T2 , IXTX60N50L2 , IXTX8N150L , IXTX90N25L2 , IXTX90P20P , IXTY01N100 , IXTY01N100D , IXTY01N80 , IRFB3306 , IXTY02N50D , IXTY05N100 , IXTY08N100D2 , IXTY08N100P , IXTY08N50D2 , IXTY10P15T , IXTY12N06T , IXTY15P15T .

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