IXTY4N60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTA4N60P VDSS = 600 VPolarHVTMIXTP4N60P ID25 = 4 APower MOSFETIXTU4N60P RDS(on) 2.0 N-Channel Enhancement ModeIXTY4N60PAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient 40 V

Preliminary Technical InformationX2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG

X2-Class VDSS = 650VIXTY4N65X2Power MOSFET ID25 = 4AIXTA4N65X2 RDS(on) 850m IXTP4N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum Ratings D (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VGVGSM Transient 40 VSID25 TC

TrenchPTM VDSS = - 50VIXTY48P05TID25 = - 48APower MOSFETIXTA48P05T RDS(on) 30m IXTP48P05TP-Channel Enhancement ModeAvalanche RatedTO-252 (IXTY)G SD (Tab)TO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C - 50 VSVDGR TJ = 25C to 150C, RGS = 1M - 50 VD (Tab)VGSS Continuous 15

Preliminary Technical InformationIXTP44N10T VDSS = 100 VTrenchMVTMIXTY44N10T ID25 = 44 APower MOSFET RDS(on) 30 m N-Channel Enhancement ModeAvalanche Rated TO-220 (IXTP)D (TAB)GDSTO-252 AA (IXTY)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100 VGVGSM Tr

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IXTY44N10TFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE