IXTY4N60P PDF and Equivalents Search

 

IXTY4N60P Specs and Replacement

Type Designator: IXTY4N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 500 nS

Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO252

IXTY4N60P substitution

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IXTY4N60P datasheet

 ..1. Size:141K  ixys
ixta4n60p ixtp4n60p ixtu4n60p ixty4n60p.pdf pdf_icon

IXTY4N60P

IXTA4N60P VDSS = 600 V PolarHVTM IXTP4N60P ID25 = 4 A Power MOSFET IXTU4N60P RDS(on) 2.0 N-Channel Enhancement Mode IXTY4N60P Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V TO-220 (IXTP) VGSS Continuous 30 V VGSM Transient 40 V ... See More ⇒

 7.1. Size:238K  ixys
ixta4n65x2 ixtp4n65x2 ixty4n65x2.pdf pdf_icon

IXTY4N60P

Preliminary Technical Information X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G ... See More ⇒

 7.2. Size:313K  ixys
ixty4n65x2 ixta4n65x2 ixtp4n65x2.pdf pdf_icon

IXTY4N60P

X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G VGSM Transient 40 V S ID25 TC... See More ⇒

 9.1. Size:284K  ixys
ixty48p05t ixta48p05t ixtp48p05t.pdf pdf_icon

IXTY4N60P

TrenchPTM VDSS = - 50V IXTY48P05T ID25 = - 48A Power MOSFET IXTA48P05T RDS(on) 30m IXTP48P05T P-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C - 50 V S VDGR TJ = 25 C to 150 C, RGS = 1M - 50 V D (Tab) VGSS Continuous 15 ... See More ⇒

Detailed specifications: IXTY2N60P , IXTY2N80P , IXTY2R4N50P , IXTY32P05T , IXTY3N50P , IXTY3N60P , IXTY44N10T , IXTY48P05T , IRF530 , IXTY50N085T , IXTY55N075T , IXTY5N50P , IXTY64N055T , IXTZ550N055T2 , IXUC160N075 , IXUV170N075 , IXUV170N075S .

Keywords - IXTY4N60P MOSFET specs

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