MMIX1F520N075T2 Todos los transistores

 

MMIX1F520N075T2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMIX1F520N075T2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 830 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 500 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
   Paquete / Cubierta: MMIX
 

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MMIX1F520N075T2 Datasheet (PDF)

 8.1. Size:225K  ixys
 mmix1f420n10t.pdf pdf_icon

MMIX1F520N075T2

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 100VMMIX1F420N10THiperFETTMID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns(Electrically Isolated Tab)DN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 V Isolated Tab

 8.2. Size:233K  ixys
 mmix1f360n15t2.pdf pdf_icon

MMIX1F520N075T2

Preliminary Technical InformationTrenchT2TM GigaMOSTMVDSS = 150VMMIX1F360N15T2HiperFETTMID25 = 235A Power MOSFET RDS(on) 4.4m trr 150ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C

 8.3. Size:182K  ixys
 mmix1f132n50p3.pdf pdf_icon

MMIX1F520N075T2

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 500VMMIX1F132N50P3Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250nsDN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic RectifierSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V Isolated TabVDGR TJ =

 8.4. Size:183K  ixys
 mmix1f180n25t.pdf pdf_icon

MMIX1F520N075T2

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 250VMMIX1F180N25THiperFETTMID25 = 130A Power MOSFET RDS(on) 13m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 150C 250 VV

MOSTRAR MÁS

Otros transistores... IXTZ550N055T2 , IXUC160N075 , IXUV170N075 , IXUV170N075S , LKK47-06C5 , MKE11R600DCGFC , FCH110N65F , FCP110N65F , 75N75 , MMIX1T550N055T2 , MMIX1T600N04T2 , VBH40-05B , VHM40-06P1 , VKM40-06P1 , VKM60-01P1 , VMK165-007T , VMK90-02T2 .

History: FY4AEJ-03 | APQ03SN80A | AOTF2910L | AOTF288L | AOTF2916L | FY6ACJ-03A

 

 
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