MMIX1T550N055T2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMIX1T550N055T2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 830 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 550 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.8 V
   Qgⓘ - Carga de la puerta: 595 nC
   trⓘ - Tiempo de subida: 100 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm

Búsqueda de reemplazo de MOSFET MMIX1T550N055T2

MMIX1T550N055T2 Datasheet (PDF)

9.1. Size:240K ixys
mmix1y82n120c3h1.pdf

Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VMMIX1Y82N120C3H1GenX3TM w/ Diode IC110 = 36A VCE(sat) 3.4V (Electrically Isolated Tab)tfi(typ) = 93nsHigh-Speed IGBTCfor 20-50 kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VEVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 V

9.2. Size:243K ixys
mmix1x200n60b3h1.pdf

Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT MMIX1X200N60B3H1IC110 = 72AGenX3TM w/Diode VCE(sat) 1.7V (Electrically Isolated Tab)tfi(typ) = 110nsExtreme Light Punch ThroughCIGBT for 10-30kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Conti

9.3. Size:258K ixys
mmix1b20n300c.pdf

Advance Technical InformationHigh Voltage,VCES = 3000VMMIX1B20N300CHigh Frequency,IC110 = 20ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)CGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VEVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V Isolated TabVGEM Tr

9.4. Size:241K ixys
mmix1x340n65b4.pdf

Advance Technical InformationVCES = 650VXPTTM 650V IGBT MMIX1X340N65B4IC90 = 295AGenX4TM VCE(sat) 1.7V tfi(typ) = 80nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingCGE Maximum Ratingsymbol Test ConditionsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE =

9.5. Size:225K ixys
mmix1f420n10t.pdf

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 100VMMIX1F420N10THiperFETTMID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns(Electrically Isolated Tab)DN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 V Isolated Tab

9.6. Size:233K ixys
mmix1f360n15t2.pdf

Preliminary Technical InformationTrenchT2TM GigaMOSTMVDSS = 150VMMIX1F360N15T2HiperFETTMID25 = 235A Power MOSFET RDS(on) 4.4m trr 150ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C

9.7. Size:233K ixys
mmix1x200n60b3.pdf

Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT MMIX1X200N60B3IC110 = 120AGenX3TM VCE(sat) 1.7V (Electrically Isolated Tab)tfi(typ) = 110nsExtreme Light Punch ThroughCIGBT for 10-30kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VEVCGR TJ = 25C to 175C, RGE = 1M 600 VVGES Continuous 2

9.8. Size:182K ixys
mmix1f132n50p3.pdf

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 500VMMIX1F132N50P3Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250nsDN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic RectifierSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V Isolated TabVDGR TJ =

9.9. Size:225K ixys
mmix1g75n250.pdf

Advance Technical InformationHigh Voltage IGBT VCES = 2500VMMIX1G75N250IC90 = 65AFor Capacitor Discharge VCE(sat) 2.9VApplications( Electrically Isolated Tab)CGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 2500 VEVCES TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 V Isolated TabVGEM Transient 30 VCIC25

9.10. Size:183K ixys
mmix1f180n25t.pdf

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 250VMMIX1F180N25THiperFETTMID25 = 130A Power MOSFET RDS(on) 13m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 150C 250 VV

9.11. Size:243K ixys
mmix1g320n60b3.pdf

Advance Technical InformationGenX3TM 600V VCES = 600VMMIX1G320N60B3IC25 = 400AIGBTVCE(sat) 1.50VMedium-Speed Low-Vsat PTIGBTs for 5-40 kHz SwitchingCGESymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V Isolated TabVCGR TJ = 25C to 150C, RGE = 1M 600 VCVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 4

9.12. Size:299K ixys
mmix1x100n60b3h1.pdf

Preliminary Technical InformationXPTTM 600V VCES = 600VMMIX1X100N60B3H1GenX3TM w/ DiodeIC90 = 60AVCE(sat) 1.80V(Electrically Isolated Tab)CMedium-Speed Low-Vsat PTIGBT for 10-30 kHz SwitchingGSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 V Isolated TabVGES Continuous 20 V

9.13. Size:181K ixys
mmix1f210n30p3.pdf

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 300VMMIX1F210N30P3Power MOSFET ID25 = 108A RDS(on) 16m (Electrically Isolated Tab)trr 250nsN-Channel Enhancement ModeDAvalanche RatedFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 V Isolated TabVDGR TJ

9.14. Size:273K ixys
mmix1y100n120c3h1.pdf

Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VMMIX1Y100N120C3H1GenX3TM w/ Diode IC110 = 40A VCE(sat) 3.5V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingCGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VEVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 V Isolated TabVGEM Trans

9.15. Size:176K ixys
mmix1f44n100q3.pdf

Advance Technical InformationHiperFETTM VDSS = 1000VMMIX1F44N100Q3Power MOSFET ID25 = 30A Q3-Class RDS(on) 245m trr 300ns(Electrically Isolated Tab)DN-Channel Enhancement ModeFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1000 V Isolated TabVDGR TJ = 25C to 150

9.16. Size:180K ixys
mmix1f230n20t.pdf

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 200VMMIX1F230N20THiperFETTMID25 = 168A Power MOSFET RDS(on) 8.3m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 175C 200 V

9.17. Size:183K ixys
mmix1f160n30t.pdf

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 300VMMIX1F160N30THiperFETTMID25 = 102A Power MOSFET RDS(on) 20m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 150C 300 VV

9.18. Size:246K ixys
mmix1g120n120a3v1.pdf

Advance Technical InformationGenX3TM 1200V VCES = 1200VMMIX1G120N120A3V1IGBT w/ DiodeIC110 = 105AVCE(sat) 2.2V(Electrically Isolated Tab)CUltra-Low-Vsat PT IGBT for3kHz SwitchingGSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 V Isolated TabVGES Continuous 20 VCVGEM Tr

9.19. Size:256K ixys
mmix1b15n300c.pdf

Advance Technical InformationHigh Voltage,VCES = 3000VMMIX1B15N300CHigh Frequency,IC110 = 15ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)CGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VEVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V Isolated TabVGEM Tr

9.20. Size:177K ixys
mmix1f40n110p.pdf

Advance Technical InformationPolarTM HiperFETTM VDSS = 1100VMMIX1F40N110PPower MOSFET ID25 = 24A RDS(on) 290m (Electrically Isolated Tab)trr 300nsDN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierGSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1100 V Isolated TabVDGR TJ

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