All MOSFET. MMIX1T550N055T2 Datasheet

 

MMIX1T550N055T2 Datasheet and Replacement


   Type Designator: MMIX1T550N055T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 830 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id| ⓘ - Maximum Drain Current: 550 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 595 nC
   tr ⓘ - Rise Time: 100 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
 

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MMIX1T550N055T2 Datasheet (PDF)

 9.1. Size:240K  ixys
 mmix1y82n120c3h1.pdf pdf_icon

MMIX1T550N055T2

Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VMMIX1Y82N120C3H1GenX3TM w/ Diode IC110 = 36A VCE(sat) 3.4V (Electrically Isolated Tab)tfi(typ) = 93nsHigh-Speed IGBTCfor 20-50 kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VEVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 V

 9.2. Size:243K  ixys
 mmix1x200n60b3h1.pdf pdf_icon

MMIX1T550N055T2

Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT MMIX1X200N60B3H1IC110 = 72AGenX3TM w/Diode VCE(sat) 1.7V (Electrically Isolated Tab)tfi(typ) = 110nsExtreme Light Punch ThroughCIGBT for 10-30kHz SwitchingGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Conti

 9.3. Size:258K  ixys
 mmix1b20n300c.pdf pdf_icon

MMIX1T550N055T2

Advance Technical InformationHigh Voltage,VCES = 3000VMMIX1B20N300CHigh Frequency,IC110 = 20ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)CGSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VEVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V Isolated TabVGEM Tr

 9.4. Size:241K  ixys
 mmix1x340n65b4.pdf pdf_icon

MMIX1T550N055T2

Advance Technical InformationVCES = 650VXPTTM 650V IGBT MMIX1X340N65B4IC90 = 295AGenX4TM VCE(sat) 1.7V tfi(typ) = 80nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingCGE Maximum Ratingsymbol Test ConditionsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE =

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