2N7002CK Todos los transistores

 

2N7002CK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7002CK

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Resistencia drenaje-fuente RDS(on): 1.6 Ohm

Empaquetado / Estuche: TO236AB

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2N7002CK Datasheet (PDF)

1.1. 2n7002ck.pdf Size:76K _philips

2N7002CK
2N7002CK

2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features Logic-level compatible Very fast switching Trench MOSFET techn

3.1. 2n7002c1c 2n7002c1d.pdf Size:329K _update-mosfet

2N7002CK
2N7002CK

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1A / 2N7002C1B, 2N7002C1C / 2N7002C1D • VDSS = 60V , ID = 115mA, RDS(ON) = 7.5Ω • Fast Switching • Low Threshold Voltage • Integral Source-Drain Body Diode • Hermetic Ceramic Surface Mount Package (SOT-23 compatible) • High Reliability Screening Options Available • Variants C1C & C1D with solder dip finished pads (63Sn

3.2. 2n7002csm.pdf Size:174K _update-mosfet

2N7002CK
2N7002CK

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002CSM • VDSS = 60V , ID = 115mA, RDS(ON) = 7.5Ω • Fast Switching • Low Threshold Voltage • Integral Source-Drain Body Diode • Hermetic Ceramic Surface Mount Package (SOT-23 compatible) • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS Drain – Source Voltage

 3.3. 2n7002c1a 2n7002c1b.pdf Size:289K _update-mosfet

2N7002CK
2N7002CK

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1 • VDSS = 60V , ID = 115mA, RDS(ON) = 7.5Ω • Fast Switching • Low Threshold Voltage • Integral Source-Drain Body Diode • Hermetic Ceramic Surface Mount Package (SOT-23 compatible) • High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS Drain – Source Voltage 6

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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