Справочник MOSFET. 2N7002CK

 

2N7002CK Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 2N7002CK
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm
   Тип корпуса: TO236AB
 

 Аналог (замена) для 2N7002CK

   - подбор ⓘ MOSFET транзистора по параметрам

 

2N7002CK Datasheet (PDF)

 ..1. Size:76K  philips
2n7002ck.pdfpdf_icon

2N7002CK

2N7002CK60 V, 0.3 A N-channel Trench MOSFETRev. 01 11 September 2009 Product data sheet1. Product profile1.1 General descriptionESD protected N-channel enhancement mode Field-Effect Transistor (FET) in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features Logic-level compatible Very fast switching Trench MOSFET

 ..2. Size:585K  nxp
2n7002ck.pdfpdf_icon

2N7002CK

2N7002CK60 V, 0.3 A N-channel Trench MOSFETRev. 01 11 September 2009 Product data sheet1. Product profile1.1 General descriptionESD protected N-channel enhancement mode Field-Effect Transistor (FET) in asmall SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features Logic-level compatible Very fast switching Trench MOSFET

 7.1. Size:329K  semelab
2n7002c1c 2n7002c1d.pdfpdf_icon

2N7002CK

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002C1A / 2N7002C1B, 2N7002C1C / 2N7002C1D VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available Variants C1C & C1D with solder dip finished pads (63Sn

 7.2. Size:174K  semelab
2n7002csm.pdfpdf_icon

2N7002CK

N-CHANNEL ENHANCEMENT MODE MOSFET 2N7002CSM VDSS = 60V , ID = 115mA, RDS(ON) = 7.5 Fast Switching Low Threshold Voltage Integral Source-Drain Body Diode Hermetic Ceramic Surface Mount Package (SOT-23 compatible) High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage

Другие MOSFET... VMO650-01F , VWM270-0075X2 , 2N7002BK , 2N7002BKM , 2N7002BKS , 2N7002BKT , 2N7002BKV , 2N7002BKW , 2SK3918 , 2N7002F , 2N7002P , 2N7002PS , 2N7002PT , 2N7002PV , 2N7002PW , BF1102R , BF1107 .

History: DH105N07D | RHU003N03FRA | IXTT30N50P | SSM6J402TU | VS4604AP | OSG70R1KFF | 80N08TR

 

 
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