2N7002PT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N7002PT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.31 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm

Encapsulados: SC75

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2N7002PT datasheet

 ..1. Size:306K  philips
2n7002pt.pdf pdf_icon

2N7002PT

2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET

 7.1. Size:354K  philips
2n7002ps.pdf pdf_icon

2N7002PT

2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSF

 7.2. Size:311K  philips
2n7002p.pdf pdf_icon

2N7002PT

2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compat

 7.3. Size:148K  philips
2n7002pw.pdf pdf_icon

2N7002PT

2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level co

Otros transistores... 2N7002BKS, 2N7002BKT, 2N7002BKV, 2N7002BKW, 2N7002CK, 2N7002F, 2N7002P, 2N7002PS, AO4407A, 2N7002PV, 2N7002PW, BF1102R, BF1107, BF1108, BF1108R, BF1118, BF1118R