2N7002PT Todos los transistores

 

2N7002PT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N7002PT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: SC75
     - Selección de transistores por parámetros

 

2N7002PT Datasheet (PDF)

 ..1. Size:306K  philips
2n7002pt.pdf pdf_icon

2N7002PT

2N7002PT60 V, 310 mA N-channel Trench MOSFETRev. 1 2 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET

 7.1. Size:354K  philips
2n7002ps.pdf pdf_icon

2N7002PT

2N7002PS60 V, 320 mA N-channel Trench MOSFETRev. 1 1 July 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSF

 7.2. Size:311K  philips
2n7002p.pdf pdf_icon

2N7002PT

2N7002P60 V, 360 mA N-channel Trench MOSFETRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compat

 7.3. Size:148K  philips
2n7002pw.pdf pdf_icon

2N7002PT

2N7002PW60 V, 310 mA N-channel Trench MOSFETRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level co

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STP60NE06L-16FP | DMN2170U | HSSK8811 | SML1001R3BN | BUK7660-100A | SIF4N80C | SDF9N100JEC-D

 

 
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