Справочник MOSFET. 2N7002PT

 

2N7002PT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 2N7002PT
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.31 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm
   Тип корпуса: SC75
 

 Аналог (замена) для 2N7002PT

   - подбор ⓘ MOSFET транзистора по параметрам

 

2N7002PT Datasheet (PDF)

 ..1. Size:306K  philips
2n7002pt.pdfpdf_icon

2N7002PT

2N7002PT60 V, 310 mA N-channel Trench MOSFETRev. 1 2 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET

 7.1. Size:354K  philips
2n7002ps.pdfpdf_icon

2N7002PT

2N7002PS60 V, 320 mA N-channel Trench MOSFETRev. 1 1 July 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSF

 7.2. Size:311K  philips
2n7002p.pdfpdf_icon

2N7002PT

2N7002P60 V, 360 mA N-channel Trench MOSFETRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compat

 7.3. Size:148K  philips
2n7002pw.pdfpdf_icon

2N7002PT

2N7002PW60 V, 310 mA N-channel Trench MOSFETRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level co

Другие MOSFET... 2N7002BKS , 2N7002BKT , 2N7002BKV , 2N7002BKW , 2N7002CK , 2N7002F , 2N7002P , 2N7002PS , AO3407 , 2N7002PV , 2N7002PW , BF1102R , BF1107 , BF1108 , BF1108R , BF1118 , BF1118R .

History: AM4920 | AON7432 | AP9977GJ-HF | CRSS035N10N | HUFA76419P3 | ZXM62P02E6 | IXFH36N55Q

 

 
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