2N7002PW Todos los transistores

 

2N7002PW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N7002PW
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.26 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: SC70
     - Selección de transistores por parámetros

 

2N7002PW Datasheet (PDF)

 ..1. Size:148K  philips
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2N7002PW

2N7002PW60 V, 310 mA N-channel Trench MOSFETRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level co

 ..2. Size:266K  nxp
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2N7002PW

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 7.1. Size:354K  philips
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2N7002PW

2N7002PS60 V, 320 mA N-channel Trench MOSFETRev. 1 1 July 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSF

 7.2. Size:311K  philips
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2N7002PW

2N7002P60 V, 360 mA N-channel Trench MOSFETRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compat

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History: RQJ0601DGDQS | ET6309 | 4N70KL-TMS2-T | AP2312GN | IRF8852 | IRFR120ZPBF | FRE264R

 

 
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