Справочник MOSFET. 2N7002PW

 

2N7002PW MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2N7002PW
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 0.26 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.4 V
   Максимально допустимый постоянный ток стока |Id|: 0.31 A
   Максимальная температура канала (Tj): 150 °C
   Сопротивление сток-исток открытого транзистора (Rds): 1.6 Ohm
   Тип корпуса: SC70

 Аналог (замена) для 2N7002PW

 

 

2N7002PW Datasheet (PDF)

 ..1. Size:148K  philips
2n7002pw.pdf

2N7002PW
2N7002PW

2N7002PW60 V, 310 mA N-channel Trench MOSFETRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level co

 ..2. Size:266K  nxp
2n7002pw.pdf

2N7002PW
2N7002PW

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 7.1. Size:354K  philips
2n7002ps.pdf

2N7002PW
2N7002PW

2N7002PS60 V, 320 mA N-channel Trench MOSFETRev. 1 1 July 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSF

 7.2. Size:311K  philips
2n7002p.pdf

2N7002PW
2N7002PW

2N7002P60 V, 360 mA N-channel Trench MOSFETRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compat

 7.3. Size:306K  philips
2n7002pt.pdf

2N7002PW
2N7002PW

2N7002PT60 V, 310 mA N-channel Trench MOSFETRev. 1 2 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET

 7.4. Size:475K  nxp
2n7002ps.pdf

2N7002PW
2N7002PW

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 7.5. Size:432K  nxp
2n7002p.pdf

2N7002PW
2N7002PW

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 7.6. Size:277K  nxp
2n7002pv.pdf

2N7002PW
2N7002PW

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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