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BF1212 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BF1212

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente (Vds): 6 V

Corriente continua de drenaje (Id): 0.03 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 30 Ohm

Empaquetado / Estuche: SOT143B

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BF1212 Datasheet (PDF)

1.1. bf1212 r wr.pdf Size:429K _philips

BF1212
BF1212

DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 NXP Semiconductors Product specification BF1212; BF1212R; N-channel dual-gate MOS-FETs BF1212WR FEATURES PINNING ? Short channel transistor with high forward transfer PIN DESCRIPTION admittance to input capacitance ratio 1source ? Low noise gain controlled a

5.1. bf1215.pdf Size:262K _philips

BF1212
BF1212

BF1215 Dual N-channel dual gate MOSFET Rev. 01 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance

5.2. bf1211 r wr.pdf Size:415K _philips

BF1212
BF1212

DISCRETE SEMICONDUCTORS DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; N-channel dual-gate MOS-FETs BF1211WR FEATURES PINNING ? Short channel transistor with high forward transfer PIN DESCRIPTION admittance to input capacitance ratio 1source ? Low noise gain controlled a

5.3. bf1214.pdf Size:211K _philips

BF1212
BF1212

BF1214 Dual N-channel dual gate MOSFET Rev. 01 30 October 2007 Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diode

5.4. bf1218.pdf Size:672K _philips

BF1212
BF1212

BF1218 Dual N-channel dual gate MOSFET Rev. 01 14 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enabl

5.5. bf1216.pdf Size:185K _philips

BF1212
BF1212

BF1216 Dual N-channel dual gate MOSFET Rev. 01 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and very good cross modulation performance during AGC. Integrated diodes b

5.6. bf1210.pdf Size:252K _philips

BF1212
BF1212

BF1210 Dual N-channel dual gate MOSFET Rev. 01 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diode

Otros transistores... BF1206F , BF1207 , BF1208 , BF1208D , BF1210 , BF1211 , BF1211R , BF1211WR , 2N5484 , BF1212R , BF1212WR , BF1214 , BF1218 , BF904AR , BF904AWR , BLA0912-250 , BLA0912-250R .

 


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