BF1212 Todos los transistores

 

BF1212 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BF1212
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 30 Ohm
   Paquete / Cubierta: SOT143B
 

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BF1212 Datasheet (PDF)

 ..1. Size:429K  philips
 bf1212 r wr.pdf pdf_icon

BF1212

DISCRETE SEMICONDUCTORS DATA SHEETBF1212; BF1212R; BF1212WRN-channel dual-gate MOS-FETsProduct specification 2003 Nov 14NXP Semiconductors Product specificationBF1212; BF1212R;N-channel dual-gate MOS-FETsBF1212WRFEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTIONadmittance to input capacitance ratio1source Low noise gain contr

 9.1. Size:415K  philips
 bf1211 r wr.pdf pdf_icon

BF1212

DISCRETE SEMICONDUCTORS DATA SHEETBF1211; BF1211R; BF1211WRN-channel dual-gate MOS-FETsProduct specification 2003 Dec 16NXP Semiconductors Product specificationBF1211; BF1211R;N-channel dual-gate MOS-FETsBF1211WRFEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTIONadmittance to input capacitance ratio1source Low noise gain contr

 9.2. Size:252K  philips
 bf1210.pdf pdf_icon

BF1212

BF1210Dual N-channel dual gate MOSFETRev. 01 25 October 2006 Product data sheet1. Product profile1.1 General descriptionThe BF1210 is a combination of two dual gate MOSFET amplifiers with shared sourceand gate2 leads.The source and substrate are interconnected. Internal bias circuits enableDC stabilization and a very good cross modulation performance during AGC. Integrated

 9.3. Size:262K  philips
 bf1215.pdf pdf_icon

BF1212

BF1215Dual N-channel dual gate MOSFETRev. 01 6 May 2010 Product data sheet1. Product profile1.1 General descriptionThe BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch.The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation perfor

MOSTRAR MÁS

Otros transistores... BF1206F , BF1207 , BF1208 , BF1208D , BF1210 , BF1211 , BF1211R , BF1211WR , STP75NF75 , BF1212R , BF1212WR , BF1214 , BF1218 , BF904AR , BF904AWR , BLA0912-250 , BLA0912-250R .

History: BL4N65-P | 2SK2232 | HM2309DR | 2SK1723 | PTP12HN06 | FDD6680S | 24NM60G-TA3-T

 

 
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