BF1212 Specs and Replacement

Type Designator: BF1212

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 30 Ohm

Package: SOT143B

BF1212 substitution

- MOSFET ⓘ Cross-Reference Search

 

BF1212 datasheet

 ..1. Size:429K  philips
bf1212 r wr.pdf pdf_icon

BF1212

DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 NXP Semiconductors Product specification BF1212; BF1212R; N-channel dual-gate MOS-FETs BF1212WR FEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTION admittance to input capacitance ratio 1source Low noise gain contr... See More ⇒

 9.1. Size:415K  philips
bf1211 r wr.pdf pdf_icon

BF1212

DISCRETE SEMICONDUCTORS DATA SHEET BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; N-channel dual-gate MOS-FETs BF1211WR FEATURES PINNING Short channel transistor with high forward transfer PIN DESCRIPTION admittance to input capacitance ratio 1source Low noise gain contr... See More ⇒

 9.2. Size:252K  philips
bf1210.pdf pdf_icon

BF1212

BF1210 Dual N-channel dual gate MOSFET Rev. 01 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated ... See More ⇒

 9.3. Size:262K  philips
bf1215.pdf pdf_icon

BF1212

BF1215 Dual N-channel dual gate MOSFET Rev. 01 6 May 2010 Product data sheet 1. Product profile 1.1 General description The BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation perfor... See More ⇒

Detailed specifications: BF1206F, BF1207, BF1208, BF1208D, BF1210, BF1211, BF1211R, BF1211WR, 7N65, BF1212R, BF1212WR, BF1214, BF1218, BF904AR, BF904AWR, BLA0912-250, BLA0912-250R

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs