BLA1011-2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLA1011-2
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 10 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 36 V
|Id|ⓘ - Corriente continua de drenaje: 2.2 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: SOT538A
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BLA1011-2 Datasheet (PDF)
bla1011-2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D438BLA1011-2Avionics LDMOS transistorProduct specification 2003 Nov 19Supersedes data of 2002 Oct 02Philips Semiconductors Product specificationAvionics LDMOS transistor BLA1011-2FEATURES PINNING - SOT538A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base el
bla1011-200 n 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D379BLA1011-200Avionics LDMOS transistorPreliminary specification 2000 Aug 02Philips Semiconductors Preliminary specificationAvionics LDMOS transistor BLA1011-200FEATURES PINNING - SOT502A High power gainPIN DESCRIPTION Easy power control1drain Excellent ruggedness2gate Source on mounting base elimin
bla1011-200 bla1011s-200.pdf
BLA1011-200; BLA1011S-200Avionics LDMOS transistorRev. 08 26 October 2005 Product data sheet1. Product profile1.1 General description200 W LDMOS avionics power transistor for transmitter applications at frequencies from1030 MHz to 1090 MHz.Table 1: Typical performanceRF performance at Th = 25 C in a common source class-AB test circuit; IDq = 150 mA; typicalvalues.Mode
bla1011-300.pdf
BLA1011-300Avionics LDMOS transistorsRev. 02 5 February 2008 Product data sheet1. Product profile1.1 General description300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from1030 MHz to 1090 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit; tp =50 s; =2%.Mode of operati
bla1011-10.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLA1011-10Avionics LDMOS transistorProduct specification 2003 Nov 19Supersedes data of 2002 Oct 02Philips Semiconductors Product specificationAvionics LDMOS transistor BLA1011-10FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918