All MOSFET. BLA1011-2 Datasheet

 

BLA1011-2 MOSFET. Datasheet pdf. Equivalent

Type Designator: BLA1011-2

Type of Transistor: LDMOS

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 10 W

Maximum Drain-Source Voltage |Vds|: 36 V

Maximum Drain Current |Id|: 2.2 A

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: SOT538A

BLA1011-2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLA1011-2 Datasheet (PDF)

1.1. bla1011-2.pdf Size:73K _philips

BLA1011-2
BLA1011-2

DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification 2003 Nov 19 Supersedes data of 2002 Oct 02 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A High power gain PIN DESCRIPTION Easy power control 1 drain Excellent ruggedness 2 gate Source on mounting base eliminates DC

1.2. bla1011-200 n 1.pdf Size:83K _philips

BLA1011-2
BLA1011-2

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Aug 02 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A High power gain PIN DESCRIPTION Easy power control 1drain Excellent ruggedness 2gate Source on mounting base eliminates DC iso

1.3. bla1011-200 bla1011s-200.pdf Size:76K _philips

BLA1011-2
BLA1011-2

BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1: Typical performance RF performance at Th = 25 C in a common source class-AB test circuit; IDq = 150 mA; typical values. Mode of ope

Datasheet: BF1212WR , BF1214 , BF1218 , BF904AR , BF904AWR , BLA0912-250 , BLA0912-250R , BLA1011-10 , 2N4416 , BLA1011-200 , BLA1011-200R , BLA1011-300 , BLA1011S-200 , BLA1011S-200R , BLA6G1011-200R , BLA6H0912-500 , BLA6H1011-600 .

 


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