STD13N65M2 Datasheet. Specs and Replacement

Type Designator: STD13N65M2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.8 nS

Cossⓘ - Output Capacitance: 27.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm

Package: DPAK

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STD13N65M2 substitution

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STD13N65M2 datasheet

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std13n65m2.pdf pdf_icon

STD13N65M2

STD13N65M2 N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID TAB STD13N65M2 650 V 0.43 10 A Extremely low gate charge 3 2 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protected DPAK Applications Switching applications Figure 1. I... See More ⇒

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stb13n60m2 std13n60m2.pdf pdf_icon

STD13N65M2

STB13N60M2, STD13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STB13N60M2 TAB 650 V 0.38 11 A STD13N60M2 TAB 3 3 Extremely low gate charge 1 1 Lower RDS(on) x area vs previous generation DPAK D2PAK Low gate input resistance... See More ⇒

 7.2. Size:513K  st
std13n60dm2.pdf pdf_icon

STD13N65M2

STD13N60DM2 Datasheet N-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package VDS RDS(on) max. ID Order codes TAB STD13N60DM2 600 V 0.365 11 A Fast-recovery body diode 3 2 1 Extremely low gate charge and input capacitance DPAK Low on-resistance 100% avalanche tested D(2, TAB) Extremely high dv/dt ruggedness Zener-protected ... See More ⇒

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stb13nm60n std13nm60n.pdf pdf_icon

STD13N65M2

STB13NM60N, STD13NM60N N-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFETs in D PAK and DPAK packages Datasheet production data Features Order code VDS (@Tjmax) RDS(on) max ID STB13NM60N TAB 650 V 0.36 11 A TAB STD13NM60N 3 100% avalanche tested 3 1 1 Low input capacitance and gate charge DPAK D PAK Low gate input resistance Applications ... See More ⇒

Detailed specifications: STD12N50M2, STD12N65M2, STD12NF06-1, STD12NF06L-1, STD12NF06LT4, STD12NM50N, STD130N4F6AG, STD13N60M2, IRFP260, STD13NM60ND, STD150NH02L-1, STD150NH02LT4, STD15N65M5, STD15NF10T4, STD16N50M2, STD16N60M2, STD16N65M2

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