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STD13N65M2 Spec and Replacement


   Type Designator: STD13N65M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 27.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.43 Ohm
   Package: DPAK

 STD13N65M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD13N65M2 Specs

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std13n65m2.pdf pdf_icon

STD13N65M2

STD13N65M2 N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID TAB STD13N65M2 650 V 0.43 10 A Extremely low gate charge 3 2 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protected DPAK Applications Switching applications Figure 1. I... See More ⇒

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stb13n60m2 std13n60m2.pdf pdf_icon

STD13N65M2

STB13N60M2, STD13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STB13N60M2 TAB 650 V 0.38 11 A STD13N60M2 TAB 3 3 Extremely low gate charge 1 1 Lower RDS(on) x area vs previous generation DPAK D2PAK Low gate input resistance... See More ⇒

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std13n60dm2.pdf pdf_icon

STD13N65M2

STD13N60DM2 Datasheet N-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package VDS RDS(on) max. ID Order codes TAB STD13N60DM2 600 V 0.365 11 A Fast-recovery body diode 3 2 1 Extremely low gate charge and input capacitance DPAK Low on-resistance 100% avalanche tested D(2, TAB) Extremely high dv/dt ruggedness Zener-protected ... See More ⇒

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stb13nm60n std13nm60n.pdf pdf_icon

STD13N65M2

STB13NM60N, STD13NM60N N-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFETs in D PAK and DPAK packages Datasheet production data Features Order code VDS (@Tjmax) RDS(on) max ID STB13NM60N TAB 650 V 0.36 11 A TAB STD13NM60N 3 100% avalanche tested 3 1 1 Low input capacitance and gate charge DPAK D PAK Low gate input resistance Applications ... See More ⇒

Detailed specifications: STD12N50M2 , STD12N65M2 , STD12NF06-1 , STD12NF06L-1 , STD12NF06LT4 , STD12NM50N , STD130N4F6AG , STD13N60M2 , SPP20N60C3 , STD13NM60ND , STD150NH02L-1 , STD150NH02LT4 , STD15N65M5 , STD15NF10T4 , STD16N50M2 , STD16N60M2 , STD16N65M2 .

History: ELM14409AA

Keywords - STD13N65M2 MOSFET specs

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