All MOSFET. STD12N65M2 Datasheet

 

STD12N65M2 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD12N65M2

Marking Code: 12N65M2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 85 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16.5 nC

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 25 pF

Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm

Package: DPAK

STD12N65M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD12N65M2 Datasheet (PDF)

0.1. std12n65m2.pdf Size:935K _st

STD12N65M2
STD12N65M2

STD12N65M2 N-channel 650 V, 0.42 Ω typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD12N65M2 650 V 0.5 Ω 8 A  Extremely low gate charge  Excellent output capacitance (COSS) profile DPAK (TO-252)  100% avalanche tested  Zener-protected Figure 1: Internal schematic diagram Applicatio

5.1. std12n65m5 stf12n65m5 sti12n65m5 stp12n65m5 stu12n65m5.pdf Size:1040K _st

STD12N65M2
STD12N65M2

STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.39 Ω, 8.5 A MDmesh™ V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features VDSS @ RDS(on) Type ID PTOT 3 TJmax max 2 3 1 2 1 STD12N65M5 8.5 A 70 W IPAK TO-220 STF12N65M5 8.5 A(1) 25 W 3 STI12N65M5 710 V < 0.43 Ω 8.5 A 70 W 1 STP12N65M5 8.5 A 70 W DPAK STU12N65M5 8.5 A 70 W 3 1. Limite

 8.1. std12nf06.pdf Size:443K _st

STD12N65M2
STD12N65M2

STD12NF06 N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STD12NF06 60 V <0.1 Ω 12 A TYPICAL RDS(on) = 0.08Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE 3 3 THROUGH-HOLE IPAK (TO-251) POWER 2 1 PACKAGE IN TUBE (SUFFIX “-1") 1 SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK POWER PACKAGE IN TAPE & REEL TO-251 TO-252 (SUFFIX “

8.2. std12nf06l.pdf Size:321K _st

STD12N65M2
STD12N65M2

STD12NF06L STD12NF06L-1 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET General features VDSSS RDS(on) ID Type STD12NF06L 60V <0.1Ω 12A 3 3 STD12NF06L-1 60V <0.1Ω 12A 2 1 1 ■ Exceptional dv/dt capability DPAK IPAK ■ Low gate charge Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Internal

 8.3. std12nf06 std12nf06t4.pdf Size:335K _st

STD12N65M2
STD12N65M2

STD12NF06 STD12NF06T4 N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STripFET™ II Power MOSFET Features VDSSS RDS(on) ID Type STD12NF06 60V <0.1Ω 12A 3 3 STD12NF06T4 60V <0.1Ω 12A 2 1 1 DPAK IPAK ■ Exceptional dv/dt capability ■ Low gate charge Applications ■ Switching application Figure 1. Internal schematic diagram Description This Power MOSFET is the latest deve

8.4. std12nm50n stf12nm50n sti12nm50n stp12nm50n.pdf Size:581K _st

STD12N65M2
STD12N65M2

STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB12NM50N 550 V 0.38 Ω 11 A I²PAK TO-220 STD12NM50N 550 V 0.38 Ω 11 A 3 1 STI12NM50N 550 V 0.38 Ω 11 A DPAK STF12NM50N 550 V 0.38 Ω 11 A (1) STP12NM50N 5

 8.5. std12n05.pdf Size:177K _st

STD12N65M2
STD12N65M2

STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD12N05 50 V < 0.15 Ω 12 A STD12N06 60 V < 0.15 Ω 12 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 3 REPETITIVE AVALANCHE DATA AT 100oC 3 2 LOW GATE CHARGE 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED IPAK D

8.6. std12nf06-1.pdf Size:333K _st

STD12N65M2
STD12N65M2

STD12NF06 STD12NF06T4 N-channel 60 V, 0.08Ω, 12 A, DPAK, IPAK STripFET™ II Power MOSFET Features VDSSS RDS(on) ID Type STD12NF06 60V <0.1Ω 12A 3 3 STD12NF06T4 60V <0.1Ω 12A 2 1 1 DPAK IPAK ■ Exceptional dv/dt capability ■ Low gate charge Applications ■ Switching application Figure 1. Internal schematic diagram Description This Power MOSFET is the latest deve

8.7. std12nf06l-1 std12nf06lt4.pdf Size:316K _st

STD12N65M2
STD12N65M2

STD12NF06L STD12NF06L-1 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET General features VDSSS RDS(on) ID Type STD12NF06L 60V <0.1Ω 12A 3 3 STD12NF06L-1 60V <0.1Ω 12A 2 1 1 ■ Exceptional dv/dt capability DPAK IPAK ■ Low gate charge Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Internal

8.8. stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf Size:586K _st

STD12N65M2
STD12N65M2

STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB12NM50N 550 V 0.38 Ω 11 A I²PAK TO-220 STD12NM50N 550 V 0.38 Ω 11 A 3 1 STI12NM50N 550 V 0.38 Ω 11 A DPAK STF12NM50N 550 V 0.38 Ω 11 A (1) STP12NM50N 5

8.9. std12n50m2.pdf Size:748K _st

STD12N65M2
STD12N65M2

STD12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID STD12N50M2 500 V 0.38 Ω 10 A TAB • Extremely low gate charge 3 • Excellent output capacitance (COSS) profile 1 • 100% avalanche tested DPAK • Zener-protected Applications • Switching applications Figure 1. Int

8.10. stb12nm50nd std12nm50nd stf12nm50nd.pdf Size:1025K _st

STD12N65M2
STD12N65M2

STB12NM50ND STD12NM50ND, STF12NM50ND N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38 Ω 11 A STD12NM50ND 550 V 0.38 Ω 11 A STF12NM50ND 550 V 0.38 Ω 11 A 3 3 3 2 1 1 1 ■ 100% avalanche tested D2PAK DPAK TO-220FP ■ Low input capacitance and gate charge

8.11. std12n.pdf Size:176K _st

STD12N65M2
STD12N65M2

STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD12N05L 50 V < 0.15 Ω 12 A STD12N06L 60 V < 0.15 Ω 12 A TYPICAL R = 0.115 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 3 REPETITIVE AVALANCHE DATA AT 100oC 3 2 LOW GATE CHARGE 1 1 LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE AP

8.12. std12ne06.pdf Size:106K _st

STD12N65M2
STD12N65M2

STD12NE06  N - CHANNEL 60V - 0.08Ω - 12A - DPAK SINGLE FEATURE SIZE POWER MOSFET TYPE VDSS RDS(on) ID STD12NE06 60 V < 0.10 Ω 12 A TYPICAL R = 0.08 Ω DS(on) EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED 3 CHARACTERIZATION 1 FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES DPAK OFFICES TO-252

8.13. std12ne06l.pdf Size:81K _st

STD12N65M2
STD12N65M2

STD12NE06L  N - CHANNEL 60V - 0.09Ω - 12A - DPAK SINGLE FEATURE SIZE POWER MOSFET TYPE VDSS RDS(on) ID STD12NE06L 60 V < 0.12 Ω 12 A TYPICAL R = 0.09 Ω DS(on) EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED 3 CHARACTERIZATION 1 FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES DPAK OFFICES TO-252

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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