All MOSFET. IXTT6N150 Datasheet

 

IXTT6N150 Datasheet and Replacement


   Type Designator: IXTT6N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 540 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 67 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: TO-268
 
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IXTT6N150 Datasheet (PDF)

 ..1. Size:128K  ixys
 ixtt6n150.pdf pdf_icon

IXTT6N150

High Voltage VDSS = 1500VIXTT6N150ID25 = 6APower MOSFETsIXTH6N150 RDS(on) 3.5 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 20 VTO-247 (IXTH)VGSM Transient

 7.1. Size:588K  ixys
 ixth6n120 ixtt6n120.pdf pdf_icon

IXTT6N150

IXTH 6N120 VDSS = 1200 VHigh VoltageIXTT 6N120 ID25 = 6 APower MOSFET RDS(on) = 2.6 N-Channel Enhancement ModeAvalanche RatedPreliminary Data SheetTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C6 A

 9.1. Size:169K  ixys
 ixtq69n30p ixtt69n30p.pdf pdf_icon

IXTT6N150

IXTQ69N30P VDSS = 300 VPolarHTTMIXTT69N30P ID25 = 69 APower MOSFET RDS(on) 49 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 300 VVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C69 A(TAB)

 9.2. Size:171K  ixys
 ixtq64n25p ixtt64n25p.pdf pdf_icon

IXTT6N150

VDSS = 250 VIXTQ 64N25PPolarHTTMID25 = 64 AIXTT 64N25PPower MOSFET RDS(on) 49 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 250 VVDGR TJ = 25 C to 150 C; RGS = 1 M 250 VVGSS Continuous 20 VVGSM Transient 30 VGDID25 TC = 25 C64 A(TAB

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Datasheet: IXTY1R4N120P , IXTY1N120P , IXTX210P10T , IXTX20N150 , IXTX120P20T , IXTX120N65X2 , IXTX102N65X2 , IXTV230N085TS , IRFZ48N , IXTT4N150HV , IXTT3N200P3HV , IXTT2N300P3HV , IXTT2N170D2 , IXTT1N450HV , IXTT1N300P3HV , IXTT1N250HV , IXTT140P10T .

Keywords - IXTT6N150 MOSFET datasheet

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 IXTT6N150 equivalent finder
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