STD16N65M2 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD16N65M2
Marking Code: 16N65M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19.5 nC
trⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 32 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: DPAK
STD16N65M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD16N65M2 Datasheet (PDF)
std16n65m2.pdf
STD16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDTABSTD16N65M2 710 V 0.36 11 A Extremely low gate charge32 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protectedDPAKApplications Switching applicationsFig
std16n65m5.pdf
STD16N65M5DatasheetN-channel 650 V, 0.230 typ., 12 A MDmesh M5 Power MOSFET in a DPAK packageFeaturesVDS at Tjmax. RDS(on) max. IDOrder codesTABSTD16N65M5 710 V 0.279 12 A321 Extremely low RDS(on)DPAK Low gate charge and input capacitance Excellent switching performanceD(2, TAB) 100% avalanche testedApplications Switching applications
stb16n65m5 std16n65m5.pdf
STB16N65M5STD16N65M5N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFETin DPAK, DPAKFeaturesVDSS @ RDS(on) Type IDTJmax max.STB16N65M5710 V
std16n60m2.pdf
STD16N60M2 N-channel 600 V, 0.280 typ., 12 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD16N60M2 600 V 0.320 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(
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