BLA6H0912-500
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLA6H0912-500
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 450
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 54
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085
Ohm
Package: SOT634A
BLA6H0912-500
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLA6H0912-500
Datasheet (PDF)
..1. Size:141K philips
bla6h0912-500.pdf 
BLA6H0912-500LDMOS avionics radar power transistorRev. 04 10 May 2010 Product data sheet1. Product profile1.1 General description500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 128 s; = 10 %; IDq =
9.1. Size:131K nxp
bla6h1011-600.pdf
BLA6H1011-600LDMOS avionics power transistorRev. 01 22 April 2010 Product data sheet1. Product profile1.1 General description600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 50 s; = 2 %; IDq = 100 mA; in a class-AB production test circuit.
Datasheet: FQT7N10L
, FDP083N15A
, FQU10N20C
, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.
