All MOSFET. BLA6H0912-500 Datasheet

 

BLA6H0912-500 Datasheet and Replacement


   Type Designator: BLA6H0912-500
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT634A
 

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BLA6H0912-500 Datasheet (PDF)

 ..1. Size:141K  philips
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BLA6H0912-500

BLA6H0912-500LDMOS avionics radar power transistorRev. 04 10 May 2010 Product data sheet1. Product profile1.1 General description500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 128 s; = 10 %; IDq =

 9.1. Size:131K  nxp
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BLA6H0912-500

BLA6H1011-600LDMOS avionics power transistorRev. 01 22 April 2010 Product data sheet1. Product profile1.1 General description600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 50 s; = 2 %; IDq = 100 mA; in a class-AB production test circuit.

Datasheet: BLA1011-10 , BLA1011-2 , BLA1011-200 , BLA1011-200R , BLA1011-300 , BLA1011S-200 , BLA1011S-200R , BLA6G1011-200R , IRFB3607 , BLA6H1011-600 , BLD6G21L-50 , BLD6G21LS-50 , BLD6G22L-50 , BLD6G22LS-50 , BLF1043 , BLF1046 , BLF145 .

History: HM9435 | RQ3E180GN | HRLF180N10K | IPT65R033G7

Keywords - BLA6H0912-500 MOSFET datasheet

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