BLA6H1011-600 Datasheet and Replacement
Type Designator: BLA6H1011-600
Type of Transistor: LDMOS
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 600 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 48 V
|Id| ⓘ - Maximum Drain Current: 72 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.169 Ohm
Package: SOT539A
BLA6H1011-600 substitution
BLA6H1011-600 Datasheet (PDF)
bla6h1011-600.pdf

BLA6H1011-600LDMOS avionics power transistorRev. 01 22 April 2010 Product data sheet1. Product profile1.1 General description600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 50 s; = 2 %; IDq = 100 mA; in a class-AB production test circuit.
bla6h0912-500.pdf

BLA6H0912-500LDMOS avionics radar power transistorRev. 04 10 May 2010 Product data sheet1. Product profile1.1 General description500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.Table 1. Test informationTypical RF performance at Tcase =25C; tp = 128 s; = 10 %; IDq =
Datasheet: BLA1011-2 , BLA1011-200 , BLA1011-200R , BLA1011-300 , BLA1011S-200 , BLA1011S-200R , BLA6G1011-200R , BLA6H0912-500 , TK10A60D , BLD6G21L-50 , BLD6G21LS-50 , BLD6G22L-50 , BLD6G22LS-50 , BLF1043 , BLF1046 , BLF145 , BLF147 .
History: PM3400 | VBE1405 | 50N06AF | RU6055L | BL10N70-A | STB141NF55 | APT30F50B
Keywords - BLA6H1011-600 MOSFET datasheet
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History: PM3400 | VBE1405 | 50N06AF | RU6055L | BL10N70-A | STB141NF55 | APT30F50B



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