BLA6H1011-600 Specs and Replacement

Type Designator: BLA6H1011-600

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 600 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 48 V

|Id| ⓘ - Maximum Drain Current: 72 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.169 Ohm

Package: SOT539A

BLA6H1011-600 substitution

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BLA6H1011-600 datasheet

 ..1. Size:131K  nxp
 bla6h1011-600.pdf pdf_icon

BLA6H1011-600

BLA6H1011-600 LDMOS avionics power transistor Rev. 01 22 April 2010 Product data sheet 1. Product profile 1.1 General description 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range. Table 1. Test information Typical RF performance at Tcase =25 C; tp = 50 s; = 2 %; IDq = 100 mA; in a class-AB production test circuit. ... See More ⇒

 9.1. Size:141K  philips
 bla6h0912-500.pdf pdf_icon

BLA6H1011-600

BLA6H0912-500 LDMOS avionics radar power transistor Rev. 04 10 May 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Test information Typical RF performance at Tcase =25 C; tp = 128 s; = 10 %; IDq = ... See More ⇒

Detailed specifications: BLA1011-2, BLA1011-200, BLA1011-200R, BLA1011-300, BLA1011S-200, BLA1011S-200R, BLA6G1011-200R, BLA6H0912-500, 13N50, BLD6G21L-50, BLD6G21LS-50, BLD6G22L-50, BLD6G22LS-50, BLF1043, BLF1046, BLF145, BLF147

Keywords - BLA6H1011-600 MOSFET specs

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