All MOSFET. BLA0912-250R Datasheet

 

BLA0912-250R MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLA0912-250R
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 700 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 36 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT502A

 BLA0912-250R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLA0912-250R Datasheet (PDF)

 ..1. Size:328K  philips
 bla0912-250r.pdf

BLA0912-250R BLA0912-250R

BLA0912-250RAvionics LDMOS power transistorRev. 3 1 December 2010 Product data sheet1. Product profile1.1 General descriptionSilicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.Table 1. Test informationTypical RF performance measured in common source cl

 3.1. Size:328K  philips
 bla0912-250.pdf

BLA0912-250R BLA0912-250R

BLA0912-250Avionics LDMOS transistorRev. 3 26 November 2010 Product data sheet1. Product profile1.1 General descriptionSilicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.Table 1. Test informationTypical RF performance measured in common source class-AB

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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