All MOSFET. BLA0912-250R Datasheet

 

BLA0912-250R Datasheet and Replacement


   Type Designator: BLA0912-250R
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 700 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 36 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT502A
 

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BLA0912-250R Datasheet (PDF)

 ..1. Size:328K  philips
 bla0912-250r.pdf pdf_icon

BLA0912-250R

BLA0912-250RAvionics LDMOS power transistorRev. 3 1 December 2010 Product data sheet1. Product profile1.1 General descriptionSilicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.Table 1. Test informationTypical RF performance measured in common source cl

 3.1. Size:328K  philips
 bla0912-250.pdf pdf_icon

BLA0912-250R

BLA0912-250Avionics LDMOS transistorRev. 3 26 November 2010 Product data sheet1. Product profile1.1 General descriptionSilicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.Table 1. Test informationTypical RF performance measured in common source class-AB

Datasheet: BF1212 , BF1212R , BF1212WR , BF1214 , BF1218 , BF904AR , BF904AWR , BLA0912-250 , IRF1010E , BLA1011-10 , BLA1011-2 , BLA1011-200 , BLA1011-200R , BLA1011-300 , BLA1011S-200 , BLA1011S-200R , BLA6G1011-200R .

History: BUZ73AL | SL21N65CF | TK12A55D | SSM3K329R | PMPB12UNEA | MP4N150

Keywords - BLA0912-250R MOSFET datasheet

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