BLA6G1011-200R Specs and Replacement

Type Designator: BLA6G1011-200R

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Id| ⓘ - Maximum Drain Current: 49 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.093 Ohm

Package: SOT502A

BLA6G1011-200R substitution

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BLA6G1011-200R datasheet

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BLA6G1011-200R

BLA6G1011-200R Power LDMOS transistor Rev. 3 14 July 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (MHz) (V) (W) (dB) ... See More ⇒

Detailed specifications: BLA0912-250R, BLA1011-10, BLA1011-2, BLA1011-200, BLA1011-200R, BLA1011-300, BLA1011S-200, BLA1011S-200R, SKD502T, BLA6H0912-500, BLA6H1011-600, BLD6G21L-50, BLD6G21LS-50, BLD6G22L-50, BLD6G22LS-50, BLF1043, BLF1046

Keywords - BLA6G1011-200R MOSFET specs

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