All MOSFET. BLA6G1011-200R Datasheet

 

 

BLA6G1011-200R Datasheet and Replacement


   Type Designator: BLA6G1011-200R
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Id| ⓘ - Maximum Drain Current: 49 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.093 Ohm
   Package: SOT502A
 

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BLA6G1011-200R Datasheet (PDF)

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BLA6G1011-200R

BLA6G1011-200RPower LDMOS transistorRev. 3 14 July 2010 Product data sheet1. Product profile1.1 General description200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.Table 1. Test informationTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL Gp D tr tf(MHz) (V) (W) (dB)

Datasheet: BLA0912-250R , BLA1011-10 , BLA1011-2 , BLA1011-200 , BLA1011-200R , BLA1011-300 , BLA1011S-200 , BLA1011S-200R , SKD502T , BLA6H0912-500 , BLA6H1011-600 , BLD6G21L-50 , BLD6G21LS-50 , BLD6G22L-50 , BLD6G22LS-50 , BLF1043 , BLF1046 .

History: 2SK2593 | STH400N4F6-6 | HSM4407 | 2SK3766 | STH360N4F6-2 | HSM4606 | STH400N4F6-2

Keywords - BLA6G1011-200R MOSFET datasheet

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