BLA0912-250 Specs and Replacement

Type Designator: BLA0912-250

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 36 V

|Id| ⓘ - Maximum Drain Current: 45 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT502A

BLA0912-250 substitution

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BLA0912-250 datasheet

 ..1. Size:328K  philips
 bla0912-250.pdf pdf_icon

BLA0912-250

BLA0912-250 Avionics LDMOS transistor Rev. 3 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source class-AB... See More ⇒

 0.1. Size:328K  philips
 bla0912-250r.pdf pdf_icon

BLA0912-250

BLA0912-250R Avionics LDMOS power transistor Rev. 3 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. Table 1. Test information Typical RF performance measured in common source cl... See More ⇒

Detailed specifications: BF1211WR, BF1212, BF1212R, BF1212WR, BF1214, BF1218, BF904AR, BF904AWR, 2N7002, BLA0912-250R, BLA1011-10, BLA1011-2, BLA1011-200, BLA1011-200R, BLA1011-300, BLA1011S-200, BLA1011S-200R

Keywords - BLA0912-250 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.