BLA0912-250
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLA0912-250
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 36
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 45
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06
Ohm
Package:
SOT502A
BLA0912-250
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLA0912-250
Datasheet (PDF)
..1. Size:328K philips
bla0912-250.pdf 
BLA0912-250Avionics LDMOS transistorRev. 3 26 November 2010 Product data sheet1. Product profile1.1 General descriptionSilicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.Table 1. Test informationTypical RF performance measured in common source class-AB
0.1. Size:328K philips
bla0912-250r.pdf
BLA0912-250RAvionics LDMOS power transistorRev. 3 1 December 2010 Product data sheet1. Product profile1.1 General descriptionSilicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.Table 1. Test informationTypical RF performance measured in common source cl
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