BLA1011S-200R MOSFET. Datasheet pdf. Equivalent

BLA1011-200; BLA1011S-200Avionics LDMOS transistorRev. 08 26 October 2005 Product data sheet1. Product profile1.1 General description200 W LDMOS avionics power transistor for transmitter applications at frequencies from1030 MHz to 1090 MHz.Table 1: Typical performanceRF performance at Th = 25 C in a common source class-AB test circuit; IDq = 150 mA; typicalvalues.Mode

DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D379BLA1011-200Avionics LDMOS transistorPreliminary specification 2000 Aug 02Philips Semiconductors Preliminary specificationAvionics LDMOS transistor BLA1011-200FEATURES PINNING - SOT502A High power gainPIN DESCRIPTION Easy power control1drain Excellent ruggedness2gate Source on mounting base elimin

DISCRETE SEMICONDUCTORSDATA SHEETM3D438BLA1011-2Avionics LDMOS transistorProduct specification 2003 Nov 19Supersedes data of 2002 Oct 02Philips Semiconductors Product specificationAvionics LDMOS transistor BLA1011-2FEATURES PINNING - SOT538A High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base el

BLA1011-300Avionics LDMOS transistorsRev. 02 5 February 2008 Product data sheet1. Product profile1.1 General description300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from1030 MHz to 1090 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit; tp =50 s; =2%.Mode of operati

DISCRETE SEMICONDUCTORSDATA SHEETM3D381BLA1011-10Avionics LDMOS transistorProduct specification 2003 Nov 19Supersedes data of 2002 Oct 02Philips Semiconductors Product specificationAvionics LDMOS transistor BLA1011-10FEATURES PINNING - SOT467C High power gainPIN DESCRIPTION Easy power control1 drain Excellent ruggedness2 gate Source on mounting base