BLA1011S-200R. Аналоги и основные параметры

Наименование производителя: BLA1011S-200R

Тип транзистора: LDMOS

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 200 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 36 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm

Тип корпуса: SOT502B

Аналог (замена) для BLA1011S-200R

- подборⓘ MOSFET транзистора по параметрам

 

BLA1011S-200R даташит

 2.1. Size:76K  philips
 bla1011-200 bla1011s-200.pdf pdf_icon

BLA1011S-200R

BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1 Typical performance RF performance at Th = 25 C in a common source class-AB test circuit; IDq = 150 mA; typical values. Mode

 7.1. Size:83K  philips
 bla1011-200 n 1.pdf pdf_icon

BLA1011S-200R

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Aug 02 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A High power gain PIN DESCRIPTION Easy power control 1drain Excellent ruggedness 2gate Source on mounting base elimin

 7.2. Size:73K  philips
 bla1011-2.pdf pdf_icon

BLA1011S-200R

DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification 2003 Nov 19 Supersedes data of 2002 Oct 02 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A High power gain PIN DESCRIPTION Easy power control 1 drain Excellent ruggedness 2 gate Source on mounting base el

 7.3. Size:65K  philips
 bla1011-300.pdf pdf_icon

BLA1011S-200R

BLA1011-300 Avionics LDMOS transistors Rev. 02 5 February 2008 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit; tp =50 s; =2%. Mode of operati

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BLA0912-250, BLA0912-250R, BLA1011-10, BLA1011-2, BLA1011-200, BLA1011-200R, BLA1011-300, BLA1011S-200, SPP20N60C3, BLA6G1011-200R, BLA6H0912-500, BLA6H1011-600, BLD6G21L-50, BLD6G21LS-50, BLD6G22L-50, BLD6G22LS-50, BLF1043