5N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: 5N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 42 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO-220_TO-251_TO-252_TO-220F_TO-220F1_DFN-8

5N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

5N60 Datasheet (PDF)

1.1. tmp5n60z tmpf5n60z.pdf Size:615K _update

TMP5N60Z(G)/TMPF5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 600V 4.2A <2.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark TMP5N60Z / TMPF5N60Z TO-220 / TO-220F TMP5N60Z / TMPF5N60Z RoHS TMPF5N60ZG / TMPF5N60ZG TO-220 / TO-220F TMPF5N60

1.2. mcpf05n60b.pdf Size:600K _update

1.3. tmu5n60az.pdf Size:457K _update

TMD5N60AZ(G)/TMU5N60AZ(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.2A < 2.1W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD5N60AZ / TMU5N60AZ D-PAK/I-PAK TMD5N60AZ / TMU5N60AZ RoHS TMD5N

1.4. tmp5n60az tmpf5n60az.pdf Size:610K _update

TMP5N60AZ(G)/TMPF5N60AZ(G) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.2A < 2.1W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark TMP5N60AZ / TMPF5N60AZ TO-220 / TO-220F TMP5N60AZ / TMPF5N60AZ RoHS TMP5N60AZG

1.5. tmu5n60z.pdf Size:461K _update

TMD5N60Z(G)/TMU5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 600V 4.2A <2.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD5N60Z / TMU5N60Z D-PAK/I-PAK TMD5N60Z / TMU5N60Z RoHS TMD5N60ZG / TMU5N60ZG D-PAK/I-PAK TMD5

1.6. stf5n60m2.pdf Size:534K _update

STF5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features VDS @ RDS(on) Order code ID TJmax max STF5N60M2 650 V 1.4 Ω 3.7 A • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation 2 1 • Low gate input resistance TO-220FP • 100% avalanche tested • Zener-protec

1.7. mcu05n60.pdf Size:479K _update

1.8. stp5n60m2 stu5n60m2.pdf Size:1267K _upd

STD5N60M2, STP5N60M2, STU5N60M2 N-channel 600 V, 1.26 Ω typ., 3.5 A MDmesh II Plus™ low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS @ TJmax RDS(on) max ID 3 STD5N60M2 1 STP5N60M2 650 V 1.4 Ω 3.5 A DPAK STU5N60M2 TAB • Extremely low gate charge TAB • Lower RDS(on) x area vs previous generation 3 3 • Lo

1.9. std5n60m2.pdf Size:1267K _upd

1.10. irfp15n60l.pdf Size:198K _upd-mosfet

PD - 94415A SMPS MOSFET IRFP15N60L Applications HEXFET® Power MOSFET • Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 600V 385mΩ 130ns 15A • Motor Control applications Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate c

1.11. fmc05n60e.pdf Size:518K _upd-mosfet

FMC05N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.12. siha15n60e.pdf Size:170K _upd-mosfet

SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Qg max. (nC) 76 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (UIS) Qgd (nC) 17 •

1.13. fmv05n60e.pdf Size:487K _upd-mosfet

FMV05N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.

1.14. msu5n60.pdf Size:475K _upd-mosfet

600V/4.5A POWER MOSFET (N-Channel) MSU5N60 600V/4.5A Power MOSFET (N-Channel) General Description • MSU5N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati

1.15. fmi05n60e.pdf Size:515K _upd-mosfet

FMI05N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.16. msk7d5n60f msk7d5n60t.pdf Size:618K _upd-mosfet

600V/7.5A N-Channel MOSFET MSK7D5N60T/F 600V/7.5A N-Channel MOSFET General Description • Fast switching time • Low on resistance, low gate charge • Excellent avalanche characteristics • Suitable for active power factor correction • Suitable for switching mode power supplies TO-220 Features • VDSS=600V, ID=7.5A; • Low Drain-Source ON Resistance: RDS(ON) =

1.17. sihb15n60e.pdf Size:199K _upd-mosfet

SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •

1.18. fdd5n60nztm.pdf Size:235K _upd-mosfet

December 2010 TM UniFET-II FDD5N60NZ N-Channel MOSFET 600V, 4.0A, 2 Features Description • RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2.0A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS • Low Gate Charge ( Typ. 10nC) technology. • Low Crss ( Typ. 5pF) This advance technology has been e

1.19. tmd5n60az.pdf Size:457K _upd-mosfet

1.20. sihp15n60e.pdf Size:207K _upd-mosfet

SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •

1.21. sihf15n60e.pdf Size:136K _upd-mosfet

SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •

1.22. fcd5n60tm ws.pdf Size:938K _upd-mosfet

December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.81Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc

1.23. irfp15n60lpbf.pdf Size:147K _upd-mosfet

IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) (Ω)VGS = 10 V 0.385 RoHS* • Lower Gate Charge Results in Simple Drive Qg (Max.) (nC) 100 COMPLIANT Requirements Qgs (nC) 30 Qgd (nC) 46 • Enhanced dV/dt Capabilities Offer Improved

1.24. tmd5n60z.pdf Size:461K _upd-mosfet

1.25. fmp05n60e.pdf Size:507K _upd-mosfet

FMP05N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.26. msf5n60.pdf Size:862K _upd-mosfet

MSF5N60 N-Channel Enhancement Mode Power MOSFET Description The MSF5N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Sim

1.27. msk4d5n60f msk4d5n60t.pdf Size:617K _upd-mosfet

600V/4.5A N-Channel MOSFET MSK4D5N60T/F 600V/4.5A N-Channel MOSFET General Description • Fast switching time • Low on resistance, low gate charge • Excellent avalanche characteristics • Suitable for switching mode power supplies TO-220 Features • VDSS=600V, ID=4.5A; • Low Drain-Source ON Resistance: RDS(ON) =2.5 Ω @ VGS=10V • Qg(typ.)=17nC • RoHS C

1.28. msf15n60.pdf Size:915K _upd-mosfet

MSF15N60 N-Channel Enhancement Mode Power MOSFET Description The MSF15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • S

1.29. hfd5n60u.pdf Size:210K _update_mosfet

Jan 2014 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

1.30. wff15n60.pdf Size:422K _update_mosfet

WFF15N60 WFF15N60 WFF15N60 WFF15N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 15A,600V, R (Max0.52Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 36nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produce

1.31. hfd5n60s.pdf Size:205K _update_mosfet

Sep 2009 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60S / HFU5N60S ID = 4.3 A 600V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N60S HFU5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ

1.32. hfs5n60s.pdf Size:202K _update_mosfet

Aug 2007 BVDSS = 600 V RDS(on) typ = 2.0 HFS5N60S ID = 4.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )

1.33. cs5n60f.pdf Size:160K _update_mosfet

BRF5N60(CS5N60F) N-CHANNEL MOSFET/N 沟道 MOS 晶体管用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25�

1.34. wfd5n60c.pdf Size:485K _update_mosfet

WFD5N60C WFD5N60C WFD5N60C WFD5N60C Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.5Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

1.35. wfd5n60b.pdf Size:487K _update_mosfet

WFD5N60B WFD5N60B WFD5N60B WFD5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.4Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

1.36. tsu45n60.pdf Size:1583K _update_mosfet

TSU45N60 ® Table 2. Thermal Characteristic Symbol Parameter Value Unit RJC Thermal Resistance,Junction-to-Case 2.7 ℃/W Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 60 V IDSS Zero Gate Voltage Drain Current(Tc=25℃) VDS=60V,VGS=0V 1 μA

1.37. hfp5n60u.pdf Size:205K _update_mosfet

May 2012 BVDSS = 600 V RDS(on) typ HFP5N60U ID = 4.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area L

1.38. hfs5n60u.pdf Size:311K _update_mosfet

May 2012 BVDSS = 600 V RDS(on) typ HFS5N60U ID = 4.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area

1.39. cs15n60.pdf Size:125K _update_mosfet

CS15N60 型 N 沟道场效应晶体管参数符号测试条件最小值典型值最大值单位 PD TC=25℃ 280 W 线性降低系数 2.3 W/℃ ID （VGS=10V,TC=25℃） 15 A 极 ID （VGS=10V,TC=100℃） 9.7 A 限 IDM 60 A 值 VGS ±30 V Tjm +150 ℃ Tstg -55 +150 ℃ 热特 RthJC 0.44 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 600 V RDS on） VGS=10V,ID=9A 0.46 Ω

1.40. kqb5n60.pdf Size:185K _update_mosfet

SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMDType SMDType IC Product specification KQB5N60 TO-263 Unit: mm Features 4.57+0.2 -0.2 +0.1 5.0A, 600 V. RDS(ON) =2.0 @VGS =10V 1.27-0.1 Low gate charge (typical 16nC) Low Crss(typical 9.0pF) Fast switching +0.1 0.1max 100% avalanche teste

1.41. cs5n60d.pdf Size:155K _update_mosfet

BRD5N60(CS5N60D) N-CHANNEL MOSFET/N 沟道 MOS 晶体管用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25�

1.42. hfp5n60s.pdf Size:172K _update_mosfet

Aug 2007 BVDSS = 600 V RDS(on) typ HFP5N60S ID = 4.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(

1.43. hfw5n60s.pdf Size:175K _update_mosfet

Sep 2009 BVDSS = 600 V RDS(on) typ HFW5N60S / HFI5N60S ID = 4.5 A 600V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N60S HFI5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

1.44. wvm15n60.pdf Size:22K _update_mosfet

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N60 Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

1.45. mty25n60e.pdf Size:204K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTY25N60E/D Designer's? Data Sheet MTY25N60E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor N�Channel Enhancement�Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 25 AMPERES energy in the avalanche and commutation modes. This new energy 600 VOLTS efficient de

1.46. mgp5n60e.pdf Size:94K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP5N60E/D Product Preview Data Sheet MGP5N60E Insulated Gate Bipolar Transistor N�Channel Enhancement Mode Silicon Gate IGBT IN TO�220 This Insulated Gate Bipolar Transistor (IGBT) uses an advanced 5 A @ 90�C termination scheme to provide an enhanced and reliable high 6 A @ 25�C voltage blocking capability. Its new 600V IGB

1.47. mty25n60erev2x.pdf Size:236K _motorola

1.48. mgp15n60urev0.pdf Size:120K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Product Preview MGP15N60U Insulated Gate Bipolar Transistor N�Channel Enhancement�Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO�220 termination scheme to provide an enhanced and reliable high 15 A @ 90�C voltage�blocking capability. It also provides fast switching char

1.49. mgs05n60drev0.pdf Size:135K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGS05N60D/D Designer's? Data Sheet MGS05N60D Insulated Gate Bipolar Transistor N�Channel Enhancement�Mode Silicon Gate This IGBT contains a built�in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient POWERLUX operation at higher frequencies. IGBT � Built�In Free Wheeling Diode

1.50. mmg05n60drev0.pdf Size:135K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMG05N60D/D Designer's? Data Sheet MMG05N60D Insulated Gate Bipolar Transistor N�Channel Enhancement�Mode Silicon Gate This IGBT contains a built�in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient POWERLUX operation at higher frequencies. IGBT � Built�In Free Wheeling Diode

1.51. mgp15n60u.pdf Size:125K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Designer's? Data Sheet MGP15N60U Insulated Gate Bipolar Transistor N�Channel Enhancement�Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO�220 termination scheme to provide an enhanced and reliable high 15 A @ 90�C voltage�blocking capability. It also provides low on�volta

1.52. stb5n60b.pdf Size:86K _st

STB5NB60 ? N - CHANNEL 600V - 1.8? - 5A- I2PAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID STB5NB60 600 V < 2.0 ? 5 A TYPICAL R = 1.8 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR SMD D2PAK VERSION CONTACT 2 1 SALES OFFICE I2PAK DESCRIPTION TO-262 Using the latest high voltage MESH OVERLAY? (suffix �

1.53. tk25n60x.pdf Size:244K _toshiba2

TK25N60X MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25N60X TK25N60X TK25N60X TK25N60X 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties wit

1.54. tk25n60x5.pdf Size:370K _toshiba2

TK25N60X5 MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25N60X5 TK25N60X5 TK25N60X5 TK25N60X5 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time: trr = 120 ns(typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.12 Ω(typ.) (3) Easy to control Gate switc

1.55. rej03g1118 h5n6001pds.pdf Size:98K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.56. fqpf5n60cydtu.pdf Size:858K _fairchild_semi

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

1.57. fqb5n60tm.pdf Size:551K _fairchild_semi

April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology h

1.58. fgp5n60ls.pdf Size:246K _fairchild_semi

February 2010 FGP5N60LS tm 600V, 5A Field Stop IGBT Features General Description � High Current Capability Using novel Field Stop IGBT Technology, Fairchild�s new series of Field Stop IGBTs offer the optimum performance for HID bal- � Low Saturation Voltage: VCE(sat) =1.7V @ IC = 5A last where low conduction losses are essential. � High Input Impedance � RoHS Compliant Applications � H

1.59. fci25n60n f102.pdf Size:421K _fairchild_semi

June 2010 TM SupreMOS FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS(on) = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech-

1.60. fcd5n60 fcu5n60.pdf Size:973K _fairchild_semi

December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description � 650V @TJ = 150�C SuperFETTM is, Fairchild�s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge � Typ. Rds(on)=0.81? balance mechanism for outstanding low on-resistance and � Ultra low gate charge (typ. Qg=16nC) lower gate charge performance. This adv

1.61. fqi5n60ctu.pdf Size:655K _fairchild_semi

TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored

1.62. fch25n60n.pdf Size:579K _fairchild_semi

January 2011 SupreMOS� FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.126? Features Description � RDS(on) = 0.108? ( Typ.) at VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild�s next generation of high voltage super-junction MOSFETs, employs a deep trench filling � Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech- nologies. By

1.63. fcu5n60.pdf Size:320K _fairchild_semi

August 2014 FCD5N60 / FCU5N60 N-Channel SuperFET® MOSFET 600 V, 4.6 A, 950 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first genera- tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 810 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 16 nC) resis

1.64. fqp5n60c fqpf5n60c.pdf Size:858K _fairchild_semi

TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect � 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchild�s proprietary, � Low gate charge ( typical 15 nC) planar stripe, DMOS technology. � Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to � Fast swi

1.65. fqd5n60c fqu5n60c.pdf Size:636K _fairchild_semi

October 2008 QFET� FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect � 2.8A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchild�s proprietary, � Low gate charge ( typical 15 nC) planar stripe, DMOS technology. � Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

1.66. fqb5n60c fqi5n60c.pdf Size:655K _fairchild_semi

TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect � 4.5A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchild�s proprietary, � Low gate charge ( typical 15 nC) planar stripe, DMOS technology. � Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored to � Fast sw

1.67. fdd5n60nz.pdf Size:630K _fairchild_semi

November 2013 FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features Description • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 10 nC) technology. This advanced MOSFET family has the smallest • Low Crss (Typ. 5 pF) on-stat

1.68. fca35n60.pdf Size:764K _fairchild_semi

March 2009 SuperFETTM FCA35N60 600V N-Channel MOSFET Features Description SuperFETTM is Farichild�s proprietary, new generation of high � 650V @ TJ = 150�C voltage MOSFET family that is utilizing an advanced charge bal- � Typ.RDS(on) = 0.079? ance mechanism for outstanding low on-resistance and lower � Ultra low gate charge ( Typ. Qg = 139nC ) gate charge performance. � Low effecti

1.69. fci25n60n.pdf Size:598K _fairchild_semi

November 2013 FCI25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next • RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiates it from • Low Ef

1.70. fgh75n60uf.pdf Size:258K _fairchild_semi

April 2009 FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description � High Current Capability Using Novel Field Stop IGBT Technology, Fairchild�s new series of Field Stop IGBTs offer the optimum performance for � Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A Induction Heating, UPS, SMPS and PFC applications where low � High Input Impedance conduction and switching losses

1.71. fcp25n60n.pdf Size:697K _fairchild_semi

November 2013 FCP25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next • RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiates it from • Low Ef

1.72. sgs5n60rufd.pdf Size:614K _fairchild_semi

1.73. fqpf5n60c.pdf Size:1159K _fairchild_semi

December 2013 FQP5N60C / FQPF5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, • produced using Fairchild Semiconductor’s proprietary planar ID = 2.25 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 15 nC) technology has been

1.74. fqu5n60ctu.pdf Size:636K _fairchild_semi

October 2008 QFET® FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especia

1.75. sgh15n60rufd.pdf Size:612K _fairchild_semi

1.76. fqb5n60ctm.pdf Size:655K _fairchild_semi

1.77. fch35n60.pdf Size:1434K _fairchild_semi

February 2010 SuperFETTM FCH35N60 600V N-Channel MOSFET Features Description SuperFETTM is Farichild�s proprietary, new generation of high � 650V @ TJ = 150�C voltage MOSFET family that is utilizing an advanced charge � Typ.RDS(on) = 0.079? balance mechanism for outstanding low on-resistance and lower � Ultra low gate charge ( Typ. Qg = 139nC ) gate charge performance. � Low effec

1.78. fqpf5n60.pdf Size:624K _fairchild_semi

TM QFET FQPF5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored to • Fas

1.79. fqd5n60ctf fqd5n60ctm.pdf Size:636K _fairchild_semi

1.80. fcp25n60n f102.pdf Size:455K _fairchild_semi

March 2013 FCP25N60N_F102 N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next- generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiate it from •

1.81. fqb5n60 fqi5n60.pdf Size:553K _fairchild_semi

April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect � 5.0A, 600V, RDS(on) = 2.0? @VGS = 10 V transistors are produced using Fairchild�s proprietary, � Low gate charge ( typical 16 nC) planar stripe, DMOS technology. � Low Crss ( typical 9.0 pF) This advanced technology has been espec

1.82. fdp5n60nz fdpf5n60nz.pdf Size:265K _fairchild_semi

November 2010 TM UniFET-II FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET? 600V, 4.5A, 2.0? Features Description � RDS(on) = 1.65? ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild�s proprietary, planar � Low Gate Charge ( Typ. 10nC) stripe, DMOS technology. � Low Crss ( Typ. 5pF) This advanced technology has been esp

1.83. irfp15n60l.pdf Size:163K _international_rectifier

PD - 94415 SMPS MOSFET IRFP15N60L Applications HEXFET� Power MOSFET � Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID � Telecom and Server Power Supplies � Uninterruptible Power Supplies 600V 385m? 130ns 15A � Motor Control applications Features and Benefits � SuperFast body diode eliminates the need for external diodes in ZVS applications. � Lower Gate charge results in si

1.84. irfba35n60c.pdf Size:48K _international_rectifier

PD - 93800A PROVISIONAL IRFBA35N60C SMPS MOSFET HEXFET� Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 0.080? 35A High Speed Power Switching Benefits Low Gate Charge Qg Reduces Drive Required Improved Gate Resistance for Faster Switching Fully Characterized Capacitance and Avalanche Voltage and Current Super-220

1.85. irfp15n60lpbf.pdf Size:208K _international_rectifier

PD - 95517 SMPS MOSFET IRFP15N60LPbF Applications HEXFET� Power MOSFET � Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID � Telecom and Server Power Supplies � Uninterruptible Power Supplies 600V 385m? 130ns 15A � Motor Control applications � Lead-Free Features and Benefits � SuperFast body diode eliminates the need for external diodes in ZVS applications. � Lower Gate char

1.86. sgw5n60ruf.pdf Size:281K _samsung

N-CHANNEL IGBT SGW5N60RUF FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600

1.87. sgp15n60ruf.pdf Size:228K _samsung

N-CHANNEL IGBT SGP15N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 6

1.88. ssh15n60 ssh15n55.pdf Size:394K _samsung

查询SSH15N55供应商捷多邦，专业PCB打样工厂，24小时加急出货

1.89. sgw5n60rufd.pdf Size:325K _samsung

CO-PAK IGBT SGW5N60RUFD FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ.) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS S

1.90. sgp5n60rufd.pdf Size:324K _samsung

CO-PAK IGBT SGP5N60RUFD FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ.) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS S

1.91. sgh15n60rufd.pdf Size:268K _samsung

CO-PAK IGBT SGH15N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS S

1.92. sgp5n60ruf.pdf Size:280K _samsung

N-CHANNEL IGBT SGP5N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600

1.93. spp15n60c3 spi15n60c3 spa15n60c3 rev[1].3.2new.pdf Size:684K _infineon

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS� Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 ? � New revolutionary high voltage technology ID 15 A � Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 � Periodic avalanche rated � Extreme dv/dt rated 3 � Ultra low effective capacitances 2 1 P-TO220-3-31 � Improved transconductance � PG-TO-220-3-31;-3-111: Fully isolated pack

1.94. skp15n60 skw15n60 rev2 3g.pdf Size:371K _infineon

SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C � 75% lower Eoff compared to previous generation combined with low conduction losses � Short circuit withstand time � 10 �s G E � Designed for: - Motor controls - Inverter � NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, t

1.95. spw15n60c3 rev[1].2.5 pcn.pdf Size:743K _infineon

VDS Tjmax ? � � G � � � � G

1.96. igw75n60t rev2 5g.pdf Size:397K _infineon

IGW75N60T TrenchStop� Series q Low Loss IGBT in TrenchStop� and Fieldstop technology C � Very low VCE(sat) 1.5 V (typ.) � Maximum Junction Temperature 175 �C � Short circuit withstand time � 5�s G � Designed for : E - Frequency Converters - Uninterrupted Power Supply � TrenchStop� and Fieldstop technology for 600 V applications offers : PG-TO-247-3 - very tight paramet

1.97. spi15n60cfd rev1.0 b.pdf Size:559K _infineon

SPI15N60CFD C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features V 1?B6M 650 V !0 V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0. 0 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 1 .4 A D V 2 AIG6 ADL <6I: 8=6G<: PG?TO262 V "MIG:B: 9v /dt G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" ;;8!#& 01>53:10 2;= V 0D;IHL>I8=>C< -4

1.98. ikb15n60trev2 5g.pdf Size:1222K _infineon

IKB15N60T TrenchStop� Series q Low Loss DuoPack : IGBT in TrenchStop� and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C � Very low VCE(sat) 1.5 V (typ.) � Maximum Junction Temperature 175 �C � Short circuit withstand time � 5�s G E � Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners � TrenchStop� technology fo

1.99. ikw75n60trev2 6g.pdf Size:405K _infineon

IKW75N60T TrenchStop� Series q Low Loss DuoPack : IGBT in TrenchStop� and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C � Very low VCE(sat) 1.5 V (typ.) � Maximum Junction Temperature 175 �C G � Short circuit withstand time � 5�s E � Positive temperature coefficient in VCE(sat) � very tight parameter distribution � high ruggedness, temperature s

1.100. sgb15n60 rev2 3g.pdf Size:791K _infineon

SGB15N60 Fast IGBT in NPT-technology C � 75% lower Eoff compared to previous generation combined with low conduction losses � Short circuit withstand time � 10 �s G E � Designed for: - Motor controls - Inverter � NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel swit

1.101. igb15n60trev2 4g.pdf Size:1188K _infineon

IGB15N60T TrenchStop� Series q Low Loss IGBT in TrenchStop� technology C � Very low VCE(sat) 1.5 V (typ.) � Maximum Junction Temperature 175 �C � Short circuit withstand time � 5�s G � Designed for frequency inverters for washing machines, fans, E pumps and vacuum cleaners � TrenchStop� technology for 600 V applications offers : - very tight parameter distribution - high ru

1.102. skb15n60hs rev2 3g.pdf Size:1181K _infineon

SKB15N60HS High Speed IGBT in NPT-technology C � 30% lower Eoff compared to previous generation � Short circuit withstand time � 10 �s G E � Designed for operation above 30 kHz � NPT-Technology for 600V applications offers: PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution � High ruggedness, temperature

1.103. sgb15n60hs rev2 3.pdf Size:815K _infineon

SGB15N60HS ^ High Speed IGBT in NPT-technology C � 30% lower Eoff compared to previous generation � Short circuit withstand time � 10 �s G E � Designed for operation above 30 kHz � NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D?-PAK) - moderate Eoff increase with temperature (TO-263AB) - very tight parameter distribution � High

1.104. spw15n60cfd rev1[1].2 pcn.pdf Size:700K _infineon

SPW15N60CFD TM C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0. 0 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 1 .4 A D V 2 AIG6 ADL <6I: 8=6G<: PG?TO247 V "MIG:B: 9v /dt G6I:9 /d V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 688DG9>C< ID '"!" ::7 "% /0=4290/ 1:< V 0D;IHL>I8=>C< -4* 0I6<:H V ) ! / 1 13 Ty

1.105. ika15n60trev2 3g.pdf Size:517K _infineon

IKA15N60T TrenchStop� Series q Low Loss DuoPack : IGBT in TrenchStop� and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C � Very low VCE(sat) 1.5 V (typ.) � Maximum Junction Temperature 175 �C � Short circuit withstand time � 5?s G E � TrenchStop� and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - hi

1.106. igp15n60trev2 2g[1].pdf Size:399K _infineon

IGP15N60T TrenchStop� Series q Low Loss IGBT in TrenchStop� and Fieldstop technology C � Very low VCE(sat) 1.5 V (typ.) � Maximum Junction Temperature 175 �C � Short circuit withstand time � 5�s G � Designed for : E - Frequency Converters - Uninterrupted Power Supply � TrenchStop� and Fieldstop technology for 600 V applications offers : - very tight parameter distributio

1.107. sgp15n60 sgw15n60 rev2 3g.pdf Size:333K _infineon

SGP15N60 SGW15N60 Fast IGBT in NPT-technology C � 75% lower Eoff compared to previous generation combined with low conduction losses � Short circuit withstand time � 10 �s G E � Designed for: - Motor controls - Inverter � NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching

1.108. skb15n60 rev2 2g.pdf Size:1150K _infineon

SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C � 75% lower Eoff compared to previous generation combined with low conduction losses � Short circuit withstand time � 10 �s G E � Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners � NPT-Technology for 600V applications offers: - very tight parameter dis

1.109. spw35n60cfd rev1[1].3 pcn.pdf Size:943K _infineon

SPW35N60CFD TM C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features D D U * 9K F9JC@IH=CB5FM <=;< JC@H5;9 H971.110. spa15n60cfd rev1.0.pdf Size:575K _infineon

SPA15N60CFD C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features V 1?B6M 650 V !0 V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0. 0 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 1 .4 A D V 2 AIG6 ADL <6I: 8=6G<: V "MIG:B: 9v /dt G6I:9 PG?TO220FP V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" ;;8!#& 01>53:10 2;= V 0D;IHL>I8=>C< -

1.111. ikp15n60trev2 2g[1].pdf Size:454K _infineon

IKP15N60T TrenchStop� Series q Low Loss DuoPack : IGBT in TrenchStop� and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C � Very low VCE(sat) 1.5 V (typ.) � Maximum Junction Temperature 175 �C � Short circuit withstand time � 5�s G E � Designed for : - Frequency Converters - Uninterrupted Power Supply � TrenchStop� and Fieldstop technology for

1.112. spp15n60cfd rev1.3.pdf Size:537K _infineon

SPP15N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS � Intrinsic fast-recovery body diode R 0.330 DS(on),max � Extremely low reverse recovery charge I 13.4 A D � Ultra low gate charge � Extreme dv /dt rated PG-TO220 � High peak current capability � Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed for: � Softswitc

1.113. spw35n60c3 rev[1].2.5 pcn.pdf Size:760K _infineon

SPW35N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max � New revolutionary high voltage technology R 0.1 ? DS(on),max � Ultra low gate charge I 34.6 A D � Periodic avalanche rated � Extreme dv /dt rated � Ultra low effective capacitances PG-TO247 � Improved transconductance Type Package Ordering Code Marking SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3

1.114. ixkp35n60c5.pdf Size:113K _ixys

IXKH 35N60C5 Advanced Technical Information IXKP 35N60C5 ID25 = 35 A CoolMOS™ 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET • fast CoolMOS™ 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation V

1.115. ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf Size:316K _ixys

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine

1.116. ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Size:82K _ixys

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr ? 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25�C to 150�C 600 V VDGR TJ = 25�C to 150�C; RGS = 1 MW 600 V (TAB) VGS Continuous �20 V VGSM Transient �30 V ID25 TC = 25�C 15N60

1.117. ixta5n60p ixtp5n60p.pdf Size:120K _ixys

VDSS = 600 V IXTA 5N60P PolarHVTM ID25 = 5 A IXTP 5N60P Power MOSFET ? ? RDS(on) ? 1.7 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25�C to 175�C 600 V VDGR TJ = 25�C to 175�C; RGS = 1 M? 600 V VGSS Continuous � 30 V G VGSM Transient � 40 V S (TAB) ID25 TC = 25�C5 A TO-220 (IXTP) IDM TC = 25�C, pulse

1.118. 15n60.pdf Size:237K _utc

UNISONIC TECHNOLOGIES CO., LTD 15N60 Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1 TO-247 ? DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It 1 also can withstand

1.119. 5n60.pdf Size:323K _utc

UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in p

1.120. fgw85n60rb.pdf Size:532K _fuji

http://www.fujielectric.com/products/semiconductor/ FGW85N60RB Discrete IGBT Reverse Blocking IGBT 600V / 85A Features Reverse blocking characteristic for 1 chip by Fuji's original technology. High efficiency by applying to T-type 3 level inverter circuit. Applications Uninterruptible power supply Power conditioner Battery system Maximum Ratings and Characteristics Equivalent circu

1.121. fgw35n60hd.pdf Size:555K _fuji

http://www.fujielectric.com/products/semiconductor/ FGW35N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 35A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

1.122. fgw35n60hc.pdf Size:565K _fuji

http://www.fujielectric.com/products/semiconductor/ FGW35N60HC Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 35A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

1.123. fgw35n60h.pdf Size:556K _fuji

http://www.fujielectric.com/products/semiconductor/ FGW35N60H Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 35A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absol

1.124. fgw75n60h.pdf Size:498K _fuji

http://www.fujielectric.com/products/semiconductor/ FGW75N60H Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absol

1.125. fgw75n60hd.pdf Size:560K _fuji

http://www.fujielectric.com/products/semiconductor/ FGW75N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

1.126. kgt15n60fda.pdf Size:1621K _kec

SEMICONDUCTOR KGT15N60FDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness as well as short circuit ruggedness. It is designed for hard switching applications. FEATURES ·High speed switching ·High system efficiency ·Short Circuit Withstand Times ⋎5us(@TC=100℃) ·Extremely enhanced avalanch

1.127. kf5n60fz.pdf Size:393K _kec

KF5N60P/F/PZ/FZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P, KF5N60PZ A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode pow

1.128. kf5n60d i.pdf Size:385K _kec

KF5N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 ele

1.129. kf5n60p-f.pdf Size:93K _kec

KF5N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ switching mode power supplies. A 9.9

1.130. khb4d5n60p f f2.pdf Size:89K _kec

KHB4D5N60P/F/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB4D5N60P A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ A 9.9 + 0.2 avalanche characteristics. It is mainly suitable for switching mode B B 15.95 MAX Q pow

1.131. khb7d5n60p1 f1 f2.pdf Size:1323K _kec

KHB7D5N60P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB7D0N60P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ·VDSS

1.132. sgp15n60.pdf Size:331K _igbt

SGP15N60 SGW15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

1.133. skw15n60.pdf Size:369K _igbt

SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high

1.134. ngtb45n60swg.pdf Size:139K _igbt

NGTB45N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

1.135. ixdp35n60b.pdf Size:325K _igbt

IXDP 35N60 B VCES = 600 V IGBT IXDH 35N60 B IC25 = 60 A with optional Diode IXDH 35N60 BD1 VCE(sat) typ = 2.1 V High Speed, Low Saturation Voltage C C TO-247 AD IXDH ... G G G E E C C (TAB) E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 B Symbol Conditions Maximum Ratings TO-220 AB IXDP ... VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kW 600 V G C E VG

1.136. ngtb35n60fl2wg.pdf Size:93K _igbt

NGTB35N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons

1.137. sgb15n60hs.pdf Size:813K _igbt

SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D²-PAK) - moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

1.138. sgw15n60.pdf Size:331K _igbt

1.139. ngtb75n60s.pdf Size:88K _igbt

NGTB75N60SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com c

1.140. ngtb45n60s2wg.pdf Size:83K _igbt

NGTB45N60S2WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

1.141. ixdr35n60bd1.pdf Size:115K _igbt

IXDR 35N60 BD1 VCES = 600 V IGBT IC25 = 38 A with optional Diode VCE(sat) typ= 2.2 V High Speed, Low Saturation Voltage C ISOPLUS 247TM G G C E Isolated back surface E G = Gate, E = Emitter C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features ● NPT IGBT technology VCES TJ = 25°C to 150°C 600 V ● low switching losses VCGR TJ = 25°C to 150°C;

1.142. skb15n60hs.pdf Size:1176K _igbt

SKB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • High ruggedne

1.143. ixdh35n60bd1.pdf Size:325K _igbt

1.144. ngtb75n60fl2wg.pdf Size:243K _igbt

NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C 75 A, 600 V

1.145. ngtg15n60s1.pdf Size:168K _igbt

NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http://onsemi.

1.146. ngtb45n60s2.pdf Size:83K _igbt

1.147. sgb15n60.pdf Size:788K _igbt

SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

1.148. ixdh35n60b.pdf Size:325K _igbt

1.149. ngtb15n60s1.pdf Size:177K _igbt

NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http://onsemi.

1.150. ngtb45n60s1.pdf Size:80K _igbt

NGTB45N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

1.151. ngtb45n60s.pdf Size:139K _igbt

1.152. sgh15n60rufd.pdf Size:649K _igbt

March 2000 IGBT SGH15N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD • Short Circuit rated 10us @ TC = 100°C, VGE = 15V series provides low conduction and switching losses as well • High Speed Switching as short circuit ruggedness. RUFD series is designed for • Low Saturation Voltage : VCE(sat) = 2.2 V @ IC =

1.153. ixgb75n60bd1.pdf Size:57K _igbt

ADVANCE TECHNICAL INFORMATION IXGB 75N60BD1 VCES = 600 V HiPerFASTTM IC25 = 120 A IGBT with Diode VCE(sat) = 2.3 V tfi = 150 ns Symbol Test Conditions Maximum Ratings PLUS 264 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G (TAB) VGEM Transient ±30 V C E IC25 TC = 25°C 120 A G = Gate C = Collector IC90 TC = 90°C75 A

1.154. skb15n60.pdf Size:599K _igbt

SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C  75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s G E  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  NPT-Technology for 600V applications offers: - very

1.155. ngtb45n60s1wg.pdf Size:80K _igbt

1.156. skp15n60.pdf Size:369K _igbt

1.157. ngtb75n60swg.pdf Size:88K _igbt

1.158. ngtb15n60eg.pdf Size:176K _igbt

NGTB15N60EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http://onsemi.co

1.159. ngtb75n60fl2.pdf Size:243K _igbt

1.160. igw75n60h3.pdf Size:1543K _igbt_a

IGBT High speed IGBT in Trench and Fieldstop technology IGW75N60H3 600V high speed switching series third generation Data sheet Industrial & Multimarket IGW75N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low V CEsat • low EMI • maximum junction temperature 175°C

1.161. ika15n60t.pdf Size:565K _igbt_a

IKA15N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C G  Short circuit withstand time 5s E  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight par

1.162. ixxh75n60c3d1.pdf Size:186K _igbt_a

Preliminary Technical Information XPTTM 600V IGBT VCES = 600V IXXH75N60C3D1 GenX3TM w/ Diode IC110 = 75A ≤ ≤ VCE(sat) ≤ 2.2V ≤ ≤ tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C Tab E V

1.163. ixxh75n60b3.pdf Size:167K _igbt_a

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH75N60B3 GenX3TM IC110 = 75A ≤ ≤ VCE(sat) ≤ 1.85V ≤ ≤ tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V G C VGES Continuous ±20 V Tab E VGEM Transient ±

1.164. iqab75n60d1.pdf Size:154K _igbt_a

IQAB75N60D1 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in TO-247 Package  Very high switching speed  Very low V CE(sat)  Short circuit withstand time - 5µs  Designed for frequency converters and UPS  Very tight parameter distribution  High ruggedness, temperature stable  Parallel switching capabilit

1.165. ixxh75n60c3.pdf Size:167K _igbt_a

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH75N60C3 GenX3TM IC110 = 75A ≤ ≤ VCE(sat) ≤ 2.2V ≤ ≤ tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C Tab E VGEM Transient �

1.166. ikw75n60t.pdf Size:853K _igbt_a

IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s G  Positive temperature coefficient in VCE(sat) E  very tight parameter distribution  high rugg

1.167. kgt15n60fda.pdf Size:1619K _igbt_a

1.168. iqab75n60a1.pdf Size:229K _igbt_a

IQAB75N60A1 PRELIMINARY DATASHEET IGBT Trench & Field Stop technology in TO247 Package • Very high switching speed • Very low V CE(sat) • Short circuit withstand time - 5µs • Designed for frequency converters and UPS • Very tight parameter distribution • High ruggedness, temperature stability • Parallel switching capability • Pb-free lead finish; RoHS comp

1.169. ikp15n60t.pdf Size:572K _igbt_a

IKP15N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s G  Designed for : E - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™

1.170. ikd15n60ra.pdf Size:2331K _igbt_a

IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60RA 600V TRENCHSTOPTM RC-Series for hard switching applications Data sheet Industrial Power Control IKD15N60RA TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 6

1.171. igw75n60t.pdf Size:541K _igbt_a

IGW75N60T TRENCHSTOP™ Series q Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s G  Designed for : E - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight p

1.172. ixxh75n60b3d1.pdf Size:186K _igbt_a

Preliminary Technical Information XPTTM 600V IGBT VCES = 600V IXXH75N60B3D1 GenX3TM w/ Diode IC110 = 75A ≤ ≤ VCE(sat) ≤ 1.85V ≤ ≤ tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C Tab E

1.173. kgf15n60fda.pdf Size:1547K _igbt_a

SEMICONDUCTOR KGF15N60FDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power FEATURES ·High speed switching ·High ruggedness, temperature stable behavior ·Short Circuit Withstand Times ⋎5us(@TC=100℃) ·Extremel

1.174. bt15n60a9f.pdf Size:102K _igbt_a

Silicon FS Planar IGBT R ○ BT15N60A9F General Description： VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25℃） 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features： FS Planar Technology, Positive temperature coeff

1.175. ikd15n60rf.pdf Size:1874K _igbt_a

IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60RF TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz Data sheet Industrial Power Control IKD15N60RF TRENCHSTOPTM RC-Drives Fast Series IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applica

1.176. ikw75n60h3.pdf Size:1621K _igbt_a

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW75N60H3 600V high speed switching series third generation Data sheet Industrial & Multimarket IKW75N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering • very low V CEsat

1.177. iku15n60r.pdf Size:1797K _igbt_a

IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60R, IKU15N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD15N60R, IKU15N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (R

1.178. ikd15n60r.pdf Size:1797K _igbt_a

1.179. kgf75n60kdb.pdf Size:1556K _igbt_a

SEMICONDUCTOR KGF75N60KDB TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness, temperature stable behavior ·Short Circuit Withstand T

1.180. igb15n60t.pdf Size:676K _igbt_a

IGB15N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C G E Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  TRENCHSTOP™ technology for 600V applications offers : - very t

1.181. ikb15n60t.pdf Size:692K _igbt_a

IKB15N60T TrenchStop® Series q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled 3 diode C  Very low VCE(sat) 1.5 V (typ.)  Maximum Junction Temperature 175 °C  Short circuit withstand time – 5s G E  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  Tr

1.182. iqib75n60d3.pdf Size:170K _igbt_a

IQIB75N60D3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in Isolated SOT227 Package 1  High switching speed  Low V CE(sat)  Short circuit withstand time – 5 us  Designed for frequency converters and UPS  Very tight parameter distribution 3  High ruggedness, temperature stability 2, 4 - parallel switch

1.183. igp15n60t.pdf Size:540K _igbt_a

IGP15N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C G  Short circuit withstand time 5s E  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight

1.184. iqib75n60a3.pdf Size:230K _igbt_a

IQIB75N60A3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop-technology in Isolated SOT227 Package  Very high switching speed 1  Very low VCE(sat  Short circuit withstand time – 5 us  Designed for frequency converters and UPS  Very tight parameter distribution 3  High ruggedness, temperature stability - Parallel switching capability 2, 4  Pb-free lead finish

1.185. h05n60.pdf Size:58K _hsmc

Spec. No. : MOS200603 HI-SINCERITY Issued Date : 2006.02.01 Revised Date : 2006.02.07 MICROELECTRONICS CORP. Page No. : 1/5 H05N60 Series Pin Assignment H05N60 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source 3 This advanced high voltage MOSFET is designed to withstand high 2 1 ene

1.186. aot5n60.pdf Size:132K _aosemi

AOT5N60 600V,5A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT5N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 5A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) <1.8Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanch

1.187. sif5n60c.pdf Size:539K _sisemi

深圳深爱半导体股份有限公司产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N

1.188. sif5n60c 1.pdf Size:474K _sisemi

深圳深爱半导体股份有限公司产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANN

1.189. mtn5n60fp.pdf Size:287K _cystek

Spec. No. : C408FP-A Issued Date : 2009.04.20 CYStech Electronics Corp. Revised Date : 2013.08.12 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω(typ.) MTN5N60FP ID : 4.5A Description The MTN5N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low

1.190. mtn5n60e3.pdf Size:320K _cystek

Spec. No. : C408E3-A Issued Date : 2010.09.08 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω(typ.) MTN5N60E3 ID : 4.5A Description The MTN5N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

1.191. mtn5n60i3.pdf Size:329K _cystek

Spec. No. : C408I3-A Issued Date : 2010.03.09 CYStech Electronics Corp. Revised Date : 2012.11.20 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω (typ.) MTN5N60I3 ID : 5A Description The MTN5N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

1.192. mtn5n60j3.pdf Size:349K _cystek

Spec. No. : C408J3 Issued Date : 2010.03.09 CYStech Electronics Corp. Revised Date :2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω(typ.) MTN5N60J3 ID : 5A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating package Applications

1.193. 5n60 5n60f.pdf Size:2143K _goford

GOFORD 5N60/5N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe, DMOS 600V 2.5Ω 4.5A technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellen

1.194. sdf15n60.pdf Size:165K _solitron

1.195. ssf5n60d.pdf Size:483K _silikron

SSF5N60D Main Product Characteristics: VDSS 600V RDS(on) 1.88Ω (typ.) ID 5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.196. ssf5n60g.pdf Size:491K _silikron

SSF5N60G Main Product Characteristics: VDSS 600V RDS(on) 1.88Ω (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.197. ssf5n60f.pdf Size:376K _silikron

SSF5N60F Main Product Characteristics: VDSS 600V RDS(on) 2ohm(typ.) ID 4A Marking and pin TO220F Schematic diagram Features and Benefits: Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150�

1.198. bri5n60.pdf Size:693K _blue-rocket-elect

BRI5N60(BRCS5N60I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 N 沟道 MOS 晶体管。N-CHANNEL MOSFET in a TO-251 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high ef

1.199. brd5n60.pdf Size:688K _blue-rocket-elect

BRD5N60(BRCS5N60D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

1.200. brf5n60.pdf Size:733K _blue-rocket-elect

BRF5N60(BRCS5N60F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

1.201. hff5n60.pdf Size:727K _shantou-huashan

Shantou Huashan Electronic Devices Co.,Ltd. HFF5N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220F They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

1.202. bt15n60a9f.pdf Size:102K _crhj

1.203. 1d5n60.pdf Size:121K _jdsemi

R 1D5N60 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途主要用于电源适配器、线形放大以及功率开关电路 2．主要特点开关速度快通态电阻小，输入电容小 3．封装外形

1.204. sss5n60.pdf Size:1128K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N60 SSS5N60 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts 4 Amps，600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET ■ DESCRIPTION The SSS5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

1.205. mdp15n60gth.pdf Size:1198K _magnachip

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω General Description Features These N-channel MOSFET are produced using advanced  V = 600V DS MagnaChip’s MOSFET Technology, which provides low on-  I = 15A @ V = 10V D GS state resistance, high switching performance and excellent  R ≤ 0.40Ω @ V = 10V DS(ON) GS quality. Applications These devices are sui

1.206. mdf15n60gth.pdf Size:1198K _magnachip

1.207. msf15n60.pdf Size:915K _bruckewell

1.208. wfp5n60.pdf Size:485K _winsemi

WFP5N60 WFP5N60 WFP5N60 WFP5N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.5Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced usi

1.209. wff5n60c.pdf Size:521K _winsemi

WFF5N60C WFF5N60C WFF5N60C WFF5N60C Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.5Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

1.210. wfu5n60.pdf Size:490K _winsemi

WFU5N60 WFU5N60 WFU5N60 WFU5N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.5Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced usi

1.211. wfp5n60b.pdf Size:527K _winsemi

WFP5N60B WFP5N60B WFP5N60B WFP5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.4Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

1.212. wfu5n60b.pdf Size:490K _winsemi

WFU5N60B WFU5N60B WFU5N60B WFU5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.4Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

1.213. wff5n60.pdf Size:519K _winsemi

WFF5N60 WFF5N60 WFF5N60 WFF5N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features ■ 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description General

1.214. wff5n60b.pdf Size:522K _winsemi

WFF5N60B WFF5N60B WFF5N60B WFF5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.4Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

Datasheet: PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

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5N60 MOSFET. Datasheet pdf. Equivalent

5N60 Datasheet (PDF)

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