5N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: 5N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 42 nS
Drain-Source Capacitance (Cd): 55 pF
Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm
Package: TO-220, TO-251, TO-252, TO-220F, TO-220F1, DFN-8
5N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
5N60 Datasheet (PDF)
0.1. tsp5n60m tsf5n60m.pdf Size:656K _1
TSP5N60M/TSF5N60M 600V N-Channel MOSFET Features ■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V ■ Gate charge (Typical 17nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed t
0.2. fcp125n60e.pdf Size:771K _1
November 2015 FCP125N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 29 A, 125 mΩ Features Description • 650 V @TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 102 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 7
0.3. svf5n60t svf5n60f svf5n60d svf5n60mj.pdf Size:528K _1
SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior
0.4. fcp165n60e.pdf Size:757K _1
December 2015 FCP165N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 23 A, 165 mΩ Features Description • 650 V @TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 132 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 5
0.5. mty25n60e.pdf Size:204K _motorola
M O T O R O L A O r d e r t h i s d o c u m e n t S E M I C O N D U C T O R T E C H N I C A L D A T A b y M T Y 2 5 N 6 0 E / D D e s i g n e r ' s D a t a S h e e t M T Y 2 5 N 6 0 E T M O S E - F E T . M o t o r o l a P r e f e r r e d D e v i c e P o w e r F i e l d E f f e c t T r a n s i s t o r N C h a n n e l E n h a n
0.6. mgs05n60drev0.pdf Size:135K _motorola
M O T O R O L A O r d e r t h i s d o c u m e n t S E M I C O N D U C T O R T E C H N I C A L D A T A b y M G S 0 5 N 6 0 D / D D e s i g n e r ' s D a t a S h e e t M G S 0 5 N 6 0 D I n s u l a t e d G a t e B i p o l a r T r a n s i s t o r N C h a n n e l E n h a n c e m e n t M o d e S i l i c o n G a t e T h i s I G B T c
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M O T O R O L A O r d e r t h i s d o c u m e n t S E M I C O N D U C T O R T E C H N I C A L D A T A b y M G P 5 N 6 0 E / D P r o d u c t P r e v i e w D a t a S h e e t M G P 5 N 6 0 E I n s u l a t e d G a t e B i p o l a r T r a n s i s t o r N C h a n n e l E n h a n c e m e n t M o d e S i l i c o n G a t e I G B T I N T
0.8. mmg05n60drev0.pdf Size:135K _motorola
M O T O R O L A O r d e r t h i s d o c u m e n t S E M I C O N D U C T O R T E C H N I C A L D A T A b y M M G 0 5 N 6 0 D / D D e s i g n e r ' s D a t a S h e e t M M G 0 5 N 6 0 D I n s u l a t e d G a t e B i p o l a r T r a n s i s t o r N C h a n n e l E n h a n c e m e n t M o d e S i l i c o n G a t e T h i s I G B T c
0.9. mgp15n60urev0.pdf Size:120K _motorola
M O T O R O L A O r d e r t h i s d o c u m e n t S E M I C O N D U C T O R T E C H N I C A L D A T A b y M G P 1 5 N 6 0 U / D P r o d u c t P r e v i e w M G P 1 5 N 6 0 U I n s u l a t e d G a t e B i p o l a r T r a n s i s t o r N C h a n n e l E n h a n c e m e n t M o d e S i l i c o n G a t e T h i s I n s u l a t e d G a t
0.10. mty25n60erev2x.pdf Size:236K _motorola
M O T O R O L A O r d e r t h i s d o c u m e n t S E M I C O N D U C T O R T E C H N I C A L D A T A b y M T Y 2 5 N 6 0 E / D D e s i g n e r ' s D a t a S h e e t M T Y 2 5 N 6 0 E T M O S E - F E T . M o t o r o l a P r e f e r r e d D e v i c e P o w e r F i e l d E f f e c t T r a n s i s t o r N C h a n n e l E n h a n
0.11. mgp15n60u.pdf Size:125K _motorola
M O T O R O L A O r d e r t h i s d o c u m e n t S E M I C O N D U C T O R T E C H N I C A L D A T A b y M G P 1 5 N 6 0 U / D D e s i g n e r ' s D a t a S h e e t M G P 1 5 N 6 0 U I n s u l a t e d G a t e B i p o l a r T r a n s i s t o r N C h a n n e l E n h a n c e m e n t M o d e S i l i c o n G a t e T h i s I n s u l a
0.12. stp5n60 stp5n60fi.pdf Size:311K _st
0.13. std5n60m2 stp5n60m2 stu5n60m2.pdf Size:1267K _st
STD5N60M2, STP5N60M2, STU5N60M2 N-channel 600 V, 1.26 Ω typ., 3.5 A MDmesh II Plus™ low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS @ TJmax RDS(on) max ID 3 STD5N60M2 1 STP5N60M2 650 V 1.4 Ω 3.5 A DPAK STU5N60M2 TAB • Extremely low gate charge TAB • Lower RDS(on) x area vs previous generation 3 3 • Lo
0.14. stb5n60b.pdf Size:86K _st
STB5NB60 N - CHANNEL 600V - 1.8Ω - 5A- I2PAK PowerMESH MOSFET TYPE VDSS RDS(on) ID STB5NB60 600 V < 2.0 Ω 5 A TYPICAL R = 1.8 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR SMD D2PAK VERSION CONTACT 2 1 SALES OFFICE I2PAK DESCRIPTION TO-262 Using the latest high voltage MESH OVERLA
0.15. stf5n60m2.pdf Size:534K _st
STF5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features VDS @ RDS(on) Order code ID TJmax max STF5N60M2 650 V 1.4 Ω 3.7 A • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation 2 1 • Low gate input resistance TO-220FP • 100% avalanche tested • Zener-protec
0.16. tk25n60x5.pdf Size:370K _toshiba
TK25N60X5 MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25N60X5 TK25N60X5 TK25N60X5 TK25N60X5 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time: trr = 120 ns(typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.12 Ω(typ.) (3) Easy to control Gate switc
0.17. tk25n60x.pdf Size:244K _toshiba
TK25N60X MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25N60X TK25N60X TK25N60X TK25N60X 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties wit
0.18. rej03g1118 h5n6001pds.pdf Size:98K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.19. sgh15n60rufd.pdf Size:649K _fairchild_semi
March 2000 IGBT SGH15N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD • Short Circuit rated 10us @ TC = 100°C, VGE = 15V series provides low conduction and switching losses as well • High Speed Switching as short circuit ruggedness. RUFD series is designed for • Low Saturation Voltage : VCE(sat) = 2.2 V @ IC =
0.20. fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf Size:655K _fairchild_semi
TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored
0.21. fqpf5n60.pdf Size:624K _fairchild_semi
TM QFET FQPF5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored to • Fas
0.22. fqb5n60 fqi5n60.pdf Size:553K _fairchild_semi
April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology h
0.23. fca35n60.pdf Size:764K _fairchild_semi
March 2009 SuperFETTM FCA35N60 600V N-Channel MOSFET Features Description SuperFETTM is Farichild’s proprietary, new generation of high • 650V @ TJ = 150°C voltage MOSFET family that is utilizing an advanced charge bal- • Typ.RDS(on) = 0.079Ω ance mechanism for outstanding low on-resistance and lower • Ultra low gate charge ( Typ. Qg = 139nC ) gate charge performance.
0.24. fqd5n60ctf fqd5n60ctm fqd5n60c fqu5n60c fqu5n60ctu.pdf Size:636K _fairchild_semi
October 2008 QFET® FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especia
0.25. fcp25n60n f102.pdf Size:455K _fairchild_semi
March 2013 FCP25N60N_F102 N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next- generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiate it from •
0.26. fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf Size:858K _fairchild_semi
TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t
0.27. fcp25n60n.pdf Size:697K _fairchild_semi
November 2013 FCP25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next • RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiates it from • Low Ef
0.28. fcu5n60.pdf Size:320K _fairchild_semi
August 2014 FCD5N60 / FCU5N60 N-Channel SuperFET® MOSFET 600 V, 4.6 A, 950 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first genera- tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 810 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 16 nC) resis
0.29. fcd5n60 fcu5n60.pdf Size:973K _fairchild_semi
December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.81Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc
0.30. fch25n60n.pdf Size:579K _fairchild_semi
January 2011 SupreMOS® FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS(on) = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech- n
0.31. fdd5n60nz.pdf Size:630K _fairchild_semi
November 2013 FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features Description • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 10 nC) technology. This advanced MOSFET family has the smallest • Low Crss (Typ. 5 pF) on-stat
0.32. fcd5n60tm ws.pdf Size:938K _fairchild_semi
December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.81Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc
0.33. fci25n60n f102.pdf Size:421K _fairchild_semi
June 2010 TM SupreMOS FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS(on) = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech-
0.34. fqpf5n60c.pdf Size:1159K _fairchild_semi
December 2013 FQP5N60C / FQPF5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, • produced using Fairchild Semiconductor’s proprietary planar ID = 2.25 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 15 nC) technology has been
0.35. fgh75n60uf.pdf Size:258K _fairchild_semi
April 2009 FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for • Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A Induction Heating, UPS, SMPS and PFC applications where low • High Input Impedance conduction and switch
0.36. fgp5n60ls.pdf Size:246K _fairchild_semi
February 2010 FGP5N60LS tm 600V, 5A Field Stop IGBT Features General Description • High Current Capability Using novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for HID bal- • Low Saturation Voltage: VCE(sat) =1.7V @ IC = 5A last where low conduction losses are essential. • High Input Impedance • RoHS Compliant Appl
0.37. fch35n60.pdf Size:1434K _fairchild_semi
February 2010 SuperFETTM FCH35N60 600V N-Channel MOSFET Features Description SuperFETTM is Farichild’s proprietary, new generation of high • 650V @ TJ = 150°C voltage MOSFET family that is utilizing an advanced charge • Typ.RDS(on) = 0.079Ω balance mechanism for outstanding low on-resistance and lower • Ultra low gate charge ( Typ. Qg = 139nC ) gate charge performance.
0.38. sgs5n60rufd.pdf Size:614K _fairchild_semi
April 2001 IGBT SGS5N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar • Short circuit rated 10us @ TC = 100°C, VGE = 15V Transistors (IGBTs) provide low conduction and switching • High speed switching losses as well as short circuit ruggedness. The RUFD • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5A series is
0.39. fdp5n60nz fdpf5n60nz.pdf Size:265K _fairchild_semi
November 2010 TM UniFET-II FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0 Features Description • RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 10nC) stripe, DMOS technology. • Low Crss ( Typ. 5pF) This advanced techno
0.40. fdd5n60nztm.pdf Size:235K _fairchild_semi
December 2010 TM UniFET-II FDD5N60NZ N-Channel MOSFET 600V, 4.0A, 2 Features Description • RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2.0A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS • Low Gate Charge ( Typ. 10nC) technology. • Low Crss ( Typ. 5pF) This advance technology has been e
0.41. fqb5n60tm.pdf Size:551K _fairchild_semi
April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology h
0.42. fci25n60n.pdf Size:598K _fairchild_semi
November 2013 FCI25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next • RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiates it from • Low Ef
0.43. irfba35n60c.pdf Size:48K _international_rectifier
PD - 93800A PROVISIONAL IRFBA35N60C SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 0.080Ω 35A High Speed Power Switching Benefits Low Gate Charge Qg Reduces Drive Required Improved Gate Resistance for Faster Switching Fully Characterized Capacitance and Avalanche Voltage and Current Sup
0.44. irfp15n60l.pdf Size:198K _international_rectifier
PD - 94415A SMPS MOSFET IRFP15N60L Applications HEXFET® Power MOSFET • Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 600V 385mΩ 130ns 15A • Motor Control applications Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate c
0.45. irfp15n60lpbf.pdf Size:208K _international_rectifier
PD - 95517 SMPS MOSFET IRFP15N60LPbF Applications HEXFET® Power MOSFET • Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 600V 385mΩ 130ns 15A • Motor Control applications • Lead-Free Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications.
0.46. mtp5n60.pdf Size:56K _njs
0.47. sgh15n60rufd.pdf Size:268K _samsung
CO-PAK IGBT SGH15N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS
0.48. sgw5n60ruf.pdf Size:281K _samsung
N-CHANNEL IGBT SGW5N60RUF FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES
0.49. sgp15n60ruf.pdf Size:228K _samsung
N-CHANNEL IGBT SGP15N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCE
0.50. sgw5n60rufd.pdf Size:325K _samsung
CO-PAK IGBT SGW5N60RUFD FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ.) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS
0.51. sgp5n60ruf.pdf Size:280K _samsung
N-CHANNEL IGBT SGP5N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES
0.52. sgp5n60rufd.pdf Size:324K _samsung
CO-PAK IGBT SGP5N60RUFD FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ.) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS
0.53. ssh15n60 ssh15n55.pdf Size:394K _samsung
查询SSH15N55供应商 捷多邦,专业PCB打样工厂,24小时 加急出货
0.54. rdx045n60fu6.pdf Size:82K _rohm
RDX045N60 Transistors 10V Drive Nch MOS FET RDX045N60 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TO-220FM 10.0 φ3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 2) Low input capacitance. 1.3 3) Excellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain (1) (2) (3) Applications (3)Source Switching P
0.55. siha15n60e.pdf Size:170K _vishay
SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Qg max. (nC) 76 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (UIS) Qgd (nC) 17 •
0.56. irfp15n60lpbf.pdf Size:147K _vishay
IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) (Ω)VGS = 10 V 0.385 RoHS* • Lower Gate Charge Results in Simple Drive Qg (Max.) (nC) 100 COMPLIANT Requirements Qgs (nC) 30 Qgd (nC) 46 • Enhanced dV/dt Capabilities Offer Improved
0.57. sihp15n60e.pdf Size:207K _vishay
SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •
0.58. sihf15n60e.pdf Size:136K _vishay
SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •
0.59. sihb15n60e.pdf Size:199K _vishay
SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •
0.60. skb15n60hsg.pdf Size:1181K _infineon
SKB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • High ruggedne
0.61. ikw75n60t.pdf Size:853K _infineon
IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s G Positive temperature coefficient in VCE(sat) E very tight parameter distribution high rugg
0.62. igp15n60trev2 2g.pdf Size:399K _infineon
IGP15N60T TrenchStop® Series q Low Loss IGBT in TrenchStop® and Fieldstop technology C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G • Designed for : E - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight p
0.63. spw15n60cfd.pdf Size:700K _infineon
SPW15N60CFD
TM
CססIMOSTM #:A0< &<,9=4=>:<
#<:/?.> %?88, 0.64. spw15n60c3.pdf
VDS Tjmax
Ω
•
•
G
•
•
•
•
G
0.65. spw35n60cfd.pdf SPW35N60CFD
TM
CססIMOSTM $;B1= '=-:>5>?;=
$=;0@/? &@99-=D
Features
D
D
U * 9K F9JC@IH=CB5FM <=;< JC@H5;9 H97 SGP15N60
SGW15N60
Fast IGBT in NPT-technology
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
G
E
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- paral 0.67. sgp15n60 sgw15n60g.pdf SGP15N60
SGW15N60
Fast IGBT in NPT-technology
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
G
E
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- paral 0.68. skw15n60.pdf SKP15N60
SKW15N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
G
E
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high 0.69. ikd15n60rf.pdf IGBT
IGBT with integrated diode in packages offering space saving advantage
IKD15N60RF
TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz
Data sheet
Industrial Power Control
IKD15N60RF
TRENCHSTOPTM RC-Drives Fast Series
IGBT with integrated diode in packages offering space saving advantage
C
Features:
TRENCHSTOPTM Reverse Conducting (RC) technology for 600V
applica 0.70. sgb15n60hs .pdf SGB15N60HS
^
High Speed IGBT in NPT-technology
C
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
G
E
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
PG-TO-263-3-2 (D²-PAK)
- moderate Eoff increase with temperature (TO-263AB)
- very tight parameter distri 0.71. ika15n60t.pdf IKA15N60T
TRENCHSTOP™ Series q
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
G
Short circuit withstand time 5s
E
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight par 0.72. igw75n60h3.pdf IGBT
High speed IGBT in Trench and Fieldstop technology
IGW75N60H3
600V high speed switching series third generation
Data sheet
Industrial & Multimarket
IGW75N60H3
High speed switching series third generation
High speed IGBT in Trench and Fieldstop technology
Features: C
TRENCHSTOPTM technology offering
• very low V
CEsat
• low EMI
• maximum junction temperature 175°C
0.73. ikd15n60ra.pdf IGBT
IGBT with integrated diode in packages offering space saving advantage
IKD15N60RA
600V TRENCHSTOPTM RC-Series for hard switching applications
Data sheet
Industrial Power Control
IKD15N60RA
TRENCHSTOPTM RC-Series for hard switching applications
IGBT with integrated diode in packages offering space saving advantage
C
Features:
TRENCHSTOPTM Reverse Conducting (RC) technology for 6 0.74. skb15n60hs.pdf SKB15N60HS
High Speed IGBT in NPT-technology
C
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
G
E
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
PG-TO263-3-2
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedne 0.75. skp15n60.pdf SKP15N60
SKW15N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
G
E
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high 0.76. spi15n60cfd b.pdf SPI15N60CFD
CססIMOSTM $;B1= '=-:>5>?;=
$=;0@/? &@99-=D
Features
V 1?B6M 650 V
!0
V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9:
R 0. 0
DS(on) max
V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<:
I 1 .4 A
D
V 2 AIG6 ADL <6I: 8=6G<:
PG‐TO262
V "MIG:B: 9v /dt G6I:9
V %><= E:6@ 8JGG:CI 86E67>A>IN
V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!"
;;8!#& 01>53:10 2;=
V 0D;IHL>I8 0.77. ikp15n60trev2 2g.pdf IKP15N60T
TrenchStop® Series q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
G
E
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop® and Fiel 0.78. ikd15n60r.pdf IGBT
IGBT with integrated diode in packages offering space saving advantage
IKD15N60R, IKU15N60R
600V TRENCHSTOPTM RC-Series for hard switching applications
Datasheet
Industrial & Multimarket
IKD15N60R, IKU15N60R
TRENCHSTOPTM RC-Series for hard switching applications
IGBT with integrated diode in packages offering space saving advantage
C
Features:
TRENCHSTOPTM Reverse Conducting (R 0.79. iku15n60r.pdf IGBT
IGBT with integrated diode in packages offering space saving advantage
IKD15N60R, IKU15N60R
600V TRENCHSTOPTM RC-Series for hard switching applications
Datasheet
Industrial & Multimarket
IKD15N60R, IKU15N60R
TRENCHSTOPTM RC-Series for hard switching applications
IGBT with integrated diode in packages offering space saving advantage
C
Features:
TRENCHSTOPTM Reverse Conducting (R 0.80. igb15n60trev2 4g.pdf IGB15N60T
TrenchStop® Series q
Low Loss IGBT in TrenchStop® technology
C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
G
• Designed for frequency inverters for washing machines, fans, E
pumps and vacuum cleaners
• TrenchStop® technology for 600 V applications offers :
- very tight parameter distr 0.81. spa15n60cfd.pdf SPA15N60CFD
CססIMOSTM $;B1= '=-:>5>?;=
$=;0@/? &@99-=D
Features
V 1?B6M 650 V
!0
V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9:
R 0. 0
DS(on) max
V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<:
I 1 .4 A
D
V 2 AIG6 ADL <6I: 8=6G<:
V "MIG:B: 9v /dt G6I:9 PG‐TO220FP
V %><= E:6@ 8JGG:CI 86E67>A>IN
V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!"
;;8!#& 01>53:10 2;=
V 0D;IHL>I 0.82. ika15n60trev2 3g.pdf IKA15N60T
TrenchStop® Series q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5μs
G
E
• TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter di 0.83. skb15n60.pdf SKB15N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
C
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 s
G
E
Designed for frequency inverters for washing machines,
fans, pumps and vacuum cleaners
NPT-Technology for 600V applications offers:
- very 0.84. ikb15n60t.pdf IKB15N60T
TrenchStop® Series q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel Emitter Controlled 3 diode
C
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5s
G
E
Designed for frequency inverters for washing machines, fans,
pumps and vacuum cleaners
Tr 0.85. ikw75n60trev2 6g.pdf IKW75N60T
TrenchStop® Series q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
G
• Short circuit withstand time – 5µs
E
• Positive temperature coefficient in VCE(sat)
• very tight parameter distribution
• high rugg 0.86. sgp15n60.pdf SGP15N60
SGW15N60
Fast IGBT in NPT-technology
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
G
E
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- paral 0.87. spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf SPP15N60C3, SPI15N60C3
SPA15N60C3
Cool MOS™ Power Transistor
VDS @ Tjmax 650 V
Feature
RDS(on) 0.28 Ω
• New revolutionary high voltage technology
ID 15 A
• Ultra low gate charge
PG-TO220FP PG-TO262 PG-TO220
• Periodic avalanche rated
• Extreme dv/dt rated
3
• Ultra low effective capacitances
2
1
P-TO220-3-31
• Improved transconductance
• PG-TO-220-3-31;-3-111 0.88. igw75n60t.pdf IGW75N60T
TRENCHSTOP™ Series q
Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology
C
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
G
Designed for :
E
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight p 0.89. spw35n60c3.pdf SPW35N60C3
CoolMOSTM Power Transistor
Product Summary
Features
V @ T 650 V
DS j,max
• New revolutionary high voltage technology
R 0.1
Ω
DS(on),max
• Ultra low gate charge
I 34.6 A
D
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
PG-TO247
• Improved transconductance
Type Package Ordering Code Marking
SPW35N60C3 PG-TO247 Q6704 0.90. igw75n60t rev2 5g.pdf IGW75N60T
TrenchStop® Series q
Low Loss IGBT in TrenchStop® and Fieldstop technology
C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
G
• Designed for : E
- Frequency Converters
- Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 600 V applications
offers :
PG-TO-247-3
0.91. ikb15n60trev2 5g.pdf IKB15N60T
TrenchStop® Series q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology
with soft, fast recovery anti-parallel EmCon 3 diode
C
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
G
E
• Designed for frequency inverters for washing machines, fans,
pumps and vacuum cleaners
• Trench 0.92. igp15n60t.pdf IGP15N60T
TRENCHSTOP™ Series q
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
C
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
G
Short circuit withstand time 5s
E
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight 0.93. igb15n60t.pdf IGB15N60T
TRENCHSTOP™ Series q
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
C
G
E
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for frequency inverters for washing machines, fans, pumps and vacuum
cleaners
TRENCHSTOP™ technology for 600V applications offers :
- very t 0.94. sgb15n60.pdf SGB15N60
Fast IGBT in NPT-technology
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
G
E
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
PG-TO-263-3-2
- 0.95. ikp15n60t.pdf IKP15N60T
TRENCHSTOP™ Series q
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
G
Designed for : E
- Frequency Converters
- Uninterrupted Power Supply
TRENCHSTOP™ 0.96. sgb15n60hs.pdf SGB15N60HS
^
High Speed IGBT in NPT-technology
C
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
G
E
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
PG-TO-263-3-2 (D²-PAK)
- moderate Eoff increase with temperature (TO-263AB)
- very tight parameter distri 0.97. skp15n60 skw15n60.pdf SKP15N60
SKW15N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
G
E
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high 0.98. skb15n60g.pdf SKB15N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
G
E
• Designed for frequency inverters for washing machines,
fans, pumps and vacuum cleaners
• NPT-Technology for 600V applications offers:
- very tight 0.99. spp15n60cfd.pdf SPP15N60CFD
CoolMOSTM Power Transistor
Product Summary
Features
V @ Tjmax 650 V
DS
• Intrinsic fast-recovery body diode
R 0.330
DS(on),max
• Extremely low reverse recovery charge
I 13.4 A
D
• Ultra low gate charge
• Extreme dv /dt rated
PG-TO220
• High peak current capability
• Qualified for industrial grade applications according to JEDEC1)
CoolMOS CFD designed fo 0.100. ikw75n60h3.pdf IGBT
High speed DuoPack: IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel diode
IKW75N60H3
600V high speed switching series third generation
Data sheet
Industrial & Multimarket
IKW75N60H3
High speed switching series third generation
High speed IGBT in Trench and Fieldstop technology
C
Features:
TRENCHSTOPTM technology offering
• very low V
CEsat
0.101. sgb15n60g.pdf SGB15N60
Fast IGBT in NPT-technology
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
G
E
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
PG-TO-263-3-2
- 0.102. ixta5n60p ixtp5n60p.pdf VDSS = 600 V
IXTA 5N60P
PolarHVTM
ID25 = 5 A
IXTP 5N60P
Power MOSFET
≤ Ω
RDS(on) ≤ 1.7 Ω
≤ Ω
≤ Ω
≤ Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol Test Conditions Maximum Ratings
TO-263 (IXTA)
VDSS TJ = 25°C to 175°C 600 V
VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 600 V
VGSS Continuous ± 30 V
G
VGSM Transient ± 40 V
S
(TAB)
ID25 TC = 25°C5 A
TO-220 (I 0.103. ixxh75n60c3.pdf Advance Technical Information
XPTTM 600V IGBT VCES = 600V
IXXH75N60C3
GenX3TM IC110 = 75A
≤
≤
VCE(sat) ≤ 2.2V
≤
≤
tfi(typ) = 75ns
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
TO-247 AD
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 175°C 600 V
VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V
G
VGES Continuous ±20 V
C
Tab
E
VGEM Transient 0.104. ixdp35n60b.pdf IXDP 35N60 B VCES = 600 V
IGBT
IXDH 35N60 B IC25 = 60 A
with optional Diode
IXDH 35N60 BD1 VCE(sat) typ = 2.1 V
High Speed,
Low Saturation Voltage
C C
TO-247 AD IXDH ...
G G
G
E E
C
C (TAB)
E
IXDH 35N60 B IXDH 35N60 BD1
IXDP 35N60 B
Symbol Conditions Maximum Ratings TO-220 AB IXDP ...
VCES TJ = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C; RGE = 20 kW 600 V
G
C
E
VG 0.105. ixxh75n60c3d1.pdf Preliminary Technical Information
XPTTM 600V IGBT VCES = 600V
IXXH75N60C3D1
GenX3TM w/ Diode IC110 = 75A
≤
≤
VCE(sat) ≤ 2.2V
≤
≤
tfi(typ) = 75ns
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
TO-247 AD
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 175°C 600 V
VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V
G
VGES Continuous ±20 V
C
Tab
E
V 0.106. ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf Downloaded from DatasheetLib.com - datasheet search engine
Downloaded from DatasheetLib.com - datasheet search engine
Downloaded from DatasheetLib.com - datasheet search engine
Downloaded from DatasheetLib.com - datasheet search engine
0.107. ixdr35n60bd1.pdf IXDR 35N60 BD1
VCES = 600 V
IGBT
IC25 = 38 A
with optional Diode
VCE(sat) typ= 2.2 V
High Speed,
Low Saturation Voltage
C
ISOPLUS 247TM
G
G
C
E
Isolated back surface
E
G = Gate, E = Emitter
C = Collector , TAB = Collector
Symbol Conditions Maximum Ratings Features
●
NPT IGBT technology
VCES TJ = 25°C to 150°C 600 V
●
low switching losses
VCGR TJ = 25°C to 150°C; 0.108. ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf VDSS ID25 RDS(on)
HiPerFETTM
IXFH/IXFM 15 N60 600 V 15 A 0.50 W
Power MOSFETs
IXFH/IXFM 20 N60 600 V 20 A 0.35 W
trr £ 250 ns
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH)
VDSS TJ = 25°C to 150°C 600 V
VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V
(TAB)
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC = 2 0.109. ixkp35n60c5.pdf IXKH 35N60C5
Advanced Technical Information
IXKP 35N60C5
ID25 = 35 A
CoolMOS™ 1) Power MOSFET
VDSS = 600 V
RDS(on) max = 0.1 Ω
N-Channel Enhancement Mode
Low RDSon, High VDSS MOSFET
Ultra low gate charge
D
TO-247 AD (IXKH)
G
G
D D(TAB)
S
S
TO-220 AB (IXKP)
G
D
S
Features
MOSFET
• fast CoolMOS™ 1) power MOSFET
Symbol Conditions Maximum Ratings
4th generation
V 0.110. ixgb75n60bd1.pdf ADVANCE TECHNICAL INFORMATION
IXGB 75N60BD1
VCES = 600 V
HiPerFASTTM
IC25 = 120 A
IGBT with Diode
VCE(sat) = 2.3 V
tfi = 150 ns
Symbol Test Conditions Maximum Ratings PLUS 264
VCES TJ = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V
VGES Continuous ±20 V
G
(TAB)
VGEM Transient ±30 V
C
E
IC25 TC = 25°C 120 A
G = Gate C = Collector
IC90 TC = 90°C75 A
0.111. ixdh35n60bd1.pdf IXDP 35N60 B VCES = 600 V
IGBT
IXDH 35N60 B IC25 = 60 A
with optional Diode
IXDH 35N60 BD1 VCE(sat) typ = 2.1 V
High Speed,
Low Saturation Voltage
C C
TO-247 AD IXDH ...
G G
G
E E
C
C (TAB)
E
IXDH 35N60 B IXDH 35N60 BD1
IXDP 35N60 B
Symbol Conditions Maximum Ratings TO-220 AB IXDP ...
VCES TJ = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C; RGE = 20 kW 600 V
G
C
E
VG 0.112. ixxh75n60b3.pdf Advance Technical Information
XPTTM 600V IGBT VCES = 600V
IXXH75N60B3
GenX3TM IC110 = 75A
≤
≤
VCE(sat) ≤ 1.85V
≤
≤
tfi(typ) = 125ns
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
TO-247 AD
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 175°C 600 V
VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V
G
C
VGES Continuous ±20 V Tab
E
VGEM Transient ± 0.113. ixdh35n60b.pdf IXDP 35N60 B VCES = 600 V
IGBT
IXDH 35N60 B IC25 = 60 A
with optional Diode
IXDH 35N60 BD1 VCE(sat) typ = 2.1 V
High Speed,
Low Saturation Voltage
C C
TO-247 AD IXDH ...
G G
G
E E
C
C (TAB)
E
IXDH 35N60 B IXDH 35N60 BD1
IXDP 35N60 B
Symbol Conditions Maximum Ratings TO-220 AB IXDP ...
VCES TJ = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C; RGE = 20 kW 600 V
G
C
E
VG 0.114. ixxh75n60b3d1.pdf Preliminary Technical Information
XPTTM 600V IGBT VCES = 600V
IXXH75N60B3D1
GenX3TM w/ Diode IC110 = 75A
≤
≤
VCE(sat) ≤ 1.85V
≤
≤
tfi(typ) = 125ns
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
TO-247 AD
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 175°C 600 V
VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V
G
VGES Continuous ±20 V
C
Tab
E
0.115. mcu05n60.pdf 0.116. mcpf05n60b.pdf 0.117. ngtb75n60swg.pdf NGTB75N60SWG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
www.onsemi.com
c 0.118. ngtb15n60eg.pdf NGTB15N60EG
IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Non-Punch Through (NPT) Trench construction, and
provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the
IGBT is well suited for motor drive control and other hard switching
http://onsemi.co 0.119. ngtb75n60s.pdf NGTB75N60SWG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
www.onsemi.com
c 0.120. ngtb75n60fl2wg.pdf NGTB75N60FL2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.
Features
www.onsemi.com
• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
75 A, 600 V
0.121. ngtg15n60s1.pdf NGTG15N60S1EG
IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Non-Punch Through (NPT) Trench construction, and
provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the
IGBT is well suited for motor drive control and other hard switching
http://onsemi. 0.122. ngtb45n60s2.pdf NGTB45N60S2WG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
www.onsemi.com
0.123. ngtb45n60swg.pdf NGTB45N60SWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co-pack 0.124. ngtb75n60fl2.pdf NGTB75N60FL2WG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss.
Features
www.onsemi.com
• Extremely Efficient Trench with Field Stop Technology
• TJmax = 175°C
75 A, 600 V
0.125. ngtb45n60s1.pdf NGTB45N60S1WG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
www.onsemi.com
0.126. ngtb45n60s2wg.pdf NGTB45N60S2WG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
www.onsemi.com
0.127. ngtb45n60s.pdf NGTB45N60SWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co-pack 0.128. ngtb15n60s1.pdf NGTB15N60S1EG
IGBT - Short-Circuit Rated
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Non-Punch Through (NPT) Trench construction, and
provides superior performance in demanding switching applications.
Offering both low on state voltage and minimal switching loss, the
IGBT is well suited for motor drive control and other hard switching
http://onsemi. 0.129. ngtb45n60s1wg.pdf NGTB45N60S1WG
IGBT - Inverter Welding
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for
welding applications. Incorporated into the device is a soft and fast
www.onsemi.com
0.130. ngtb35n60fl2wg.pdf NGTB35N60FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
www.ons 0.131. 15n60.pdf UNISONIC TECHNOLOGIES CO., LTD
15N60 Power MOSFET
15A, 600V N-CHANNEL
POWER MOSFET
1
TO-247
DESCRIPTION
The UTC 15N60 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide costumers with planar stripe
and DMOS technology. This technology is specialized in allowing a
minimum on-state resistance and superior switching performance. It
1
also can with 0.132. 5n60.pdf UNISONIC TECHNOLOGIES CO., LTD
5N60 Power MOSFET
5A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 5N60 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications 0.133. fmv05n60e.pdf FMV05N60E FUJI POWER MOSFET
Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET
Features Outline Drawings [mm] Equivalent circuit schematic
Maintains both low power loss and low noise
TO-220F(SLS)
Lower R (on) characteristic
DS
More controllable switching dv/dt by gate resistance
Drain(D)
Smaller V ringing waveform during switching
GS
Narrow band of the gate threshold voltage (3.0±0. 0.134. fgw35n60hd.pdf http://www.fujielectric.com/products/semiconductor/
FGW35N60HD Discrete IGBT
Discrete IGBT (High-Speed V series)
600V / 35A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Maximum Ratings and Characteristics Equivalent circuit
Abso 0.135. fmi05n60e.pdf FMI05N60E FUJI POWER MOSFET
Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET
Features Outline Drawings [mm] Equivalent circuit schematic
Maintains both low power loss and low noise
T-Pack(L)
Lower R (on) characteristic
DS
More controllable switching dv/dt by gate resistance
Drain(D)
Smaller V ringing waveform during switching
GS
Narrow band of the gate threshold voltage (3.0±0.5V) 0.136. fgw35n60hc.pdf http://www.fujielectric.com/products/semiconductor/
FGW35N60HC Discrete IGBT
Discrete IGBT (High-Speed V series)
600V / 35A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Maximum Ratings and Characteristics Equivalent circuit
Abso 0.137. fmp05n60e.pdf FMP05N60E FUJI POWER MOSFET
Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET
Features Outline Drawings [mm] Equivalent circuit schematic
Maintains both low power loss and low noise
TO-220AB
Lower R (on) characteristic
DS
More controllable switching dv/dt by gate resistance
Drain(D)
Smaller V ringing waveform during switching
GS
Narrow band of the gate threshold voltage (3.0±0.5V)
0.138. fgw75n60h.pdf http://www.fujielectric.com/products/semiconductor/
FGW75N60H Discrete IGBT
Discrete IGBT (High-Speed V series)
600V / 75A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Maximum Ratings and Characteristics Equivalent circuit
Absol 0.139. fmc05n60e.pdf FMC05N60E FUJI POWER MOSFET
Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET
Features Outline Drawings [mm] Equivalent circuit schematic
Maintains both low power loss and low noise
T-Pack(S)
Lower R (on) characteristic
DS
More controllable switching dv/dt by gate resistance
Drain(D)
Smaller V ringing waveform during switching
GS
Narrow band of the gate threshold voltage (3.0±0.5V) 0.140. fmh35n60s1fd.pdf http://www.fujielectric.com/products/semiconductor/
FMH35N60S1FD FUJI POWER MOSFET
Super J-MOS series N-Channel enhancement mode power MOSFET
Features Outline Drawings [mm] Equivalent circuit schematic
Low on-state resistance
TO-3P(Q) φ3.2± 0.1
15.5max
1.5±0.2
13 ± 0.2
4.5±0.2
Low switching loss 10 ± 0.2
easy to use (more controllabe switching dV/dt by R )
g
Drain(D)
Applica 0.141. fgw85n60rb.pdf http://www.fujielectric.com/products/semiconductor/
FGW85N60RB Discrete IGBT
Reverse Blocking IGBT
600V / 85A
Features
Reverse blocking characteristic for 1 chip by Fuji's original
technology.
High efficiency by applying to T-type 3 level inverter circuit.
Applications
Uninterruptible power supply
Power conditioner
Battery system
Maximum Ratings and Characteristics Equivalent circu 0.142. fgw35n60h.pdf http://www.fujielectric.com/products/semiconductor/
FGW35N60H Discrete IGBT
Discrete IGBT (High-Speed V series)
600V / 35A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Maximum Ratings and Characteristics Equivalent circuit
Absol 0.143. fgw75n60hd.pdf http://www.fujielectric.com/products/semiconductor/
FGW75N60HD Discrete IGBT
Discrete IGBT (High-Speed V series)
600V / 75A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Maximum Ratings and Characteristics Equivalent circuit
Abso 0.144. cju05n60b.pdf JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU05N60B N-Channel Power MOSFET
TO-252-2L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, hi 0.145. cju05n60.pdf JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU05N60 N-CHANNEL POWER MOSFET
TO-252-2L
DESCRIPTION
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast
recovery time.
Designed for high voltage, 0.146. cjp05n60b.pdf JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP05N60B N-Channel Power MOSFET
TO-220-3L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
1. GATE
high energy device also offers a drain-to-source diode fast
2. DRAIN
recovery time. Desighed 0.147. cjpf05n60b.pdf JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF05N60B N-Channel Power MOSFET
TO-220F
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high 0.148. cjp05n60.pdf JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP05N60 N-Channel Power MOSFET
TO-220-3L
Description
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast
recovery time.
Designed for high voltage, h 0.149. cjpf05n60.pdf JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF05N60 N-Channel Power MOSFET
TO-220F
Description
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast 1. GATE
recovery time.
2. DRAIN
123
Des 0.150. cjd05n60b.pdf JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD05N60B N-Channel Power MOSFET
TO-251S
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high s 0.151. kf5n60fz.pdf KF5N60P/F/PZ/FZ
SEMICONDUCTOR
N CHANNEL MOS FIELD
TECHNICAL DATA
EFFECT TRANSISTOR
General Description
KF5N60P, KF5N60PZ
A
This planar stripe MOSFET has better characteristics, such as fast O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for electronic ballast and
E DIM MILLIMETERS
G
_
+
switching mode pow 0.152. kgt15n60fda.pdf SEMICONDUCTOR
KGT15N60FDA
TECHNICAL DATA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy efficiency
and high avalanche ruggedness as well as short circuit ruggedness.
It is designed for hard switching applications.
FEATURES
·High speed switching
·High system efficiency
·Short Circuit Withstand Times ⋎5us(@TC=100℃)
·Extremely enhanced avalanch 0.153. kgf75n60kdb.pdf SEMICONDUCTOR
KGF75N60KDB
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
FEATURES
·High speed switching
·High ruggedness, temperature stable behavior
·Short Circuit Withstand T 0.154. kgf15n60fda.pdf SEMICONDUCTOR
KGF15N60FDA
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency
and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
FEATURES
·High speed switching
·High ruggedness, temperature stable behavior
·Short Circuit Withstand Times ⋎5us(@TC=100℃)
·Extremel 0.155. kf5n60p-f.pdf KF5N60P/F
SEMICONDUCTOR
N CHANNEL MOS FIELD
TECHNICAL DATA
EFFECT TRANSISTOR
General Description
KF5N60P
A
This planar stripe MOSFET has better characteristics, such as fast O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for electronic ballast and
E DIM MILLIMETERS
G
_
switching mode power supplies. A 9.9 0.156. khb7d5n60p1 f1 f2.pdf KHB7D5N60P1/F1/F2
SEMICONDUCTOR
N CHANNEL MOS FIELD
TECHNICAL DATA
EFFECT TRANSISTOR
General Description
KHB7D0N60P1
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
·VDSS 0.157. khb4d5n60p f f2.pdf KHB4D5N60P/F/F2
SEMICONDUCTOR
N CHANNEL MOS FIELD
TECHNICAL DATA
EFFECT TRANSISTOR
General Description
KHB4D5N60P
A
O
This planar stripe MOSFET has better characteristics, such as fast
C
F
switching time, low on resistance, low gate charge and excellent
E DIM MILLIMETERS
G
_
A 9.9 + 0.2
avalanche characteristics. It is mainly suitable for switching mode
B
B 15.95 MAX
Q
pow 0.158. kf5n60d i.pdf KF5N60D/I
SEMICONDUCTOR
N CHANNEL MOS FIELD
TECHNICAL DATA
EFFECT TRANSISTOR
General Description
KF5N60D
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
A K
DIM MILLIMETERS
charge and excellent avalanche characteristics. It is mainly suitable for L
C D
_
A 6.60 + 0.20
_
B 6.10 + 0.20
ele 0.159. h05n60.pdf Spec. No. : MOS200603
HI-SINCERITY
Issued Date : 2006.02.01
Revised Date : 2006.02.07
MICROELECTRONICS CORP.
Page No. : 1/5
H05N60 Series Pin Assignment
H05N60 Series
Tab
N-Channel Power Field Effect Transistor
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Description
Pin 3: Source
3
This advanced high voltage MOSFET is designed to withstand high 2
1
0.160. aot5n60.pdf AOT5N60
600V,5A N-Channel MOSFET
General Description Product Summary
VDS
700V@150℃
The AOT5N60 have been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
ID (at VGS=10V) 5A
high levels of performance and robustness in popular AC-
RDS(ON) (at VGS=10V) <1.8Ω
DC applications.By providing low RDS(on), Ciss and Crss
along with guaranteed avalanch 0.161. sss5n60.pdf Shenzhen Tuofeng Semiconductor Technology Co., Ltd
N60
SSS5N60
4 Amps 600Volts
4 Amps 600Volts
4 Amps 600Volts
4 Amps,600Volts
N-CHANNEL MOSFET
N-CHANNEL MOSFET
N-CHANNEL MOSFET
N-CHANNEL MOSFET
■ DESCRIPTION
The SSS5N60 is a high voltage MOSFET and is designed to have better characteristics,
such as fast switching time, low gate charge, low on-state resistance and have a high 0.162. sif5n60c.pdf 深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF5N60C
N- MOS / N-CHANNEL POWER MOSFET SIF5N60C
N 0.163. sif5n60c 1.pdf 深圳深爱半导体股份有限公司 产品规格书
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
Shenzhen SI Semiconductors Co., LTD. Product Specification
N- MOS / N-CHANNEL POWER MOSFET SIF5N60C
N- MOS / N-CHANNEL POWER MOSFET SIF5N60C
N- MOS / N-CHANN 0.164. mtn5n60e3.pdf Spec. No. : C408E3-A
Issued Date : 2010.09.08
CYStech Electronics Corp.
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
BVDSS : 600V
RDS(ON) : 2.1Ω(typ.)
MTN5N60E3
ID : 4.5A
Description
The MTN5N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance 0.165. mtn5n60j3.pdf Spec. No. : C408J3
Issued Date : 2010.03.09
CYStech Electronics Corp.
Revised Date :2013.12.26
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
BVDSS : 600V
RDS(ON) : 2.1Ω(typ.)
MTN5N60J3
ID : 5A
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating package
Applications
0.166. mtn5n60fp.pdf Spec. No. : C408FP-A
Issued Date : 2009.04.20
CYStech Electronics Corp.
Revised Date : 2013.08.12
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
BVDSS : 600V
RDS(ON) : 2.1Ω(typ.)
MTN5N60FP
ID : 4.5A
Description
The MTN5N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low 0.167. mtn5n60i3.pdf Spec. No. : C408I3-A
Issued Date : 2010.03.09
CYStech Electronics Corp.
Revised Date : 2012.11.20
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
BVDSS : 600V
RDS(ON) : 2.1Ω (typ.)
MTN5N60I3
ID : 5A
Description
The MTN5N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on 0.168. 5n60 5n60f.pdf GOFORD
5N60/5N60F
600V N-Channel MOSFET
GENERAL DESCRIPTION
VDSS RDS(ON) ID
This Power MOSFET is produced using
advanced planar stripe, DMOS
600V 2.5Ω 4.5A
technology.This latest technology has been
especially designed to minimize on-state
resistance, have a high rugged avalanche
characteristics, such as fast switching
time,low on resistance.low gate charge and
especially excellen 0.169. sdf15n60.pdf 0.170. ssf5n60g.pdf SSF5N60G
Main Product Characteristics:
VDSS 600V
RDS(on) 1.88Ω (typ.)
ID 5A
TO-251 Marking a nd p in Sche ma ti c di agr a m
Assignment
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery 0.171. ssf5n60f.pdf SSF5N60F
Main Product Characteristics:
VDSS 600V
RDS(on) 2ohm(typ.)
ID 4A
Marking and pin
TO220F Schematic diagram
Features and Benefits:
Assignment
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150 0.172. ssf5n60d.pdf SSF5N60D
Main Product Characteristics:
VDSS 600V
RDS(on) 1.88Ω (typ.)
ID 5A
TO-252 Marking a nd p in Sche ma ti c di agr a m
Assignment
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery 0.173. brd5n60.pdf BRD5N60(BRCS5N60D)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途 / Applications
用于高功率 DC/DC 转换和功率开关。
These devices are well suited for high 0.174. brf5n60.pdf BRF5N60(BRCS5N60F)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途 / Applications
用于高功率 DC/DC 转换和功率开关。
These devices are well suited for hi 0.175. bri5n60.pdf BRI5N60(BRCS5N60I)
Rev.C Feb.-2015 DATA SHEET
描述 / Descriptions
TO-251 塑封封装 N 沟道 MOS 晶体管。N-CHANNEL MOSFET in a TO-251 Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速度快。
Low gate charge, low crss, fast switching.
用途 / Applications
用于高功率 DC/DC 转换和功率开关。
These devices are well suited for high ef 0.176. 5n60a 5n60af 5n60g.pdf RoHS
5N60 Series RoHS
SEMICONDUCTOR
Nell High Power Products
N-Channel Power MOSFET
(5A, 600Volts)
DESCRIPTION
D
The Nell 5N60 is a three-terminal silicon
D
device with current conduction capability
of 5A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
G
They are designed for use in applications such
0.177. hff5n60.pdf Shantou Huashan Electronic Devices Co.,Ltd.
HFF5N60
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220F
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performanc 0.178. bt15n60a9f.pdf Silicon FS Planar IGBT R
○
BT15N60A9F
General Description:
VCES 600 V
Using HUAJING's proprietary Planar design and advanced FS
IC 15 A
technology, the 600V FSIGBT offers superior conduction and switching
Ptot TC=25℃) 25 W
performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V
Features:
FS Planar Technology, Positive temperature coeff 0.179. cs15n60.pdf CS15N60 型 N 沟道场效应晶体管
参数符号 测试条件 最小值 典型值 最大值 单位
PD TC=25℃ 280 W
线性降低系数 2.3 W/℃
ID (VGS=10V,TC=25℃) 15 A
极
ID (VGS=10V,TC=100℃) 9.7 A
限
IDM 60 A
值
VGS ±30 V
Tjm +150 ℃
Tstg -55 +150 ℃
热
特
RthJC 0.44 ℃/W
性
BVDSS VGS=0V,ID=0.25mA 600 V
RDS on) VGS=10V,ID=9A 0.46 Ω 0.180. 1d5n60.pdf R
1D5N60
深圳市晶导电子有限公司
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET
◆600V N-Channel VDMOS
◆使用及贮存时需防静电
◆符合 RoHS 等环保指令要求
1.主要用途
主要用于电源适配器、线形放大
以及功率开关电路
2.主要特点
开关速度快
通态电阻小,输入电容小
3.封装外形 0.181. kqb5n60.pdf SMD Type IC
SMD Type IC
SMD Type IC
SMD Type IC
SMD Type Transistors
SMD Type Transistors
SMD Type Transistors
SMD Type Transistors
SMDType
SMDType IC
Product specification
KQB5N60
TO-263
Unit: mm
Features
4.57+0.2
-0.2
+0.1
5.0A, 600 V. RDS(ON) =2.0 @VGS =10V
1.27-0.1
Low gate charge (typical 16nC)
Low Crss(typical 9.0pF)
Fast switching
+0.1
0.1max
100% avalanche teste 0.182. fir5n60fg.pdf FIR5N60FG
Advanced N-Ch Power MOSFET
PIN Connection TO-220F
Switchng Regulator Application
Features
• High Voltage: BVDSS=600V(Min.)
• Low Crss : Crss=9.8F(Typ.)
• Low gate charge : Qg=12nC(Typ.) G
D S
• Low RDS(on) :RDS(on)=1.7Ω
D
G
S
Marking Diagram
Y = Year
A = Assembly Location
YAWW
WW = Work Week
FIR5N60F
FIR5N60F = Specific Device Code
Absolute maxi 0.183. mdf15n60gth mdp15n60gth.pdf MDP15N60G / MDF15N60G
N-Channel MOSFET 600V, 15A, 0.40Ω
General Description Features
These N-channel MOSFET are produced using advanced V = 600V
DS
MagnaChip’s MOSFET Technology, which provides low on- I = 15A @ V = 10V
D GS
state resistance, high switching performance and excellent R ≤ 0.40Ω @ V = 10V
DS(ON) GS
quality.
Applications
These devices are sui 0.184. ms15n60.pdf MS15N60
N-Channel Enhancement Mode Power MOSFET
Description
The MS15N60 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Simpl 0.185. msf5n60.pdf MSF5N60
N-Channel Enhancement Mode Power MOSFET
Description
The MSF5N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• Sim 0.186. dms05n60.pdf DMS05N60 N-Channel Depletion-Mode MOSFET
FEATURES
• Depletion Mode (Normally On)
• Advanced Planar Technology
• Rugged Poly-silicon Gate Cell Structure
• Fast Switching Speed
• RoHS Compliant/Lead Free
• ESD Sensitive
BVDSX RDS(ON) (Max.) IDSS,min
Applications
600V 700Ω 12mA
• Normally-on Switches
• SMPS start-up Circuit
• Linear Amplifier
• Con 0.187. ms5n60.pdf MS5N60
N-Channel Enhancement Mode Power MOSFET
Description
The MS5N60 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features
• BVDSS=650V typically @ Tj=150° 0.188. msb15n60.pdf Preliminary_MSB15N60
N-Channel Enhancement Mode Power MOSFET
Description
The MSB15N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-263
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resista 0.189. msf15n60.pdf MSF15N60
N-Channel Enhancement Mode Power MOSFET
Description
The MSF15N60 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
• Low On Resistance
• S 0.190. wfd5n60c.pdf WFD5N60C
WFD5N60C
WFD5N60C
WFD5N60C
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 4.5A,600V,R (Max2.5Ω)@V =10V
DS(on) GS
� Ultra-low Gate charge(Typical 15nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced 0.191. wfd5n60b.pdf WFD5N60B
WFD5N60B
WFD5N60B
WFD5N60B
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 4.5A,600V,R (Max2.4Ω)@V =10V
DS(on) GS
� Ultra-low Gate charge(Typical 15nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced 0.192. wfu5n60b.pdf WFU5N60B
WFU5N60B
WFU5N60B
WFU5N60B
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 4.5A,600V,R (Max2.4Ω)@V =10V
DS(on) GS
� Ultra-low Gate charge(Typical 15nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced 0.193. wff5n60.pdf WFF5N60
WFF5N60
WFF5N60
WFF5N60
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
Features
Features
Features
■ 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 16nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
General 0.194. wff15n60.pdf WFF15N60
WFF15N60
WFF15N60
WFF15N60
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 15A,600V, R (Max0.52Ω)@V =10V
DS(on) GS
� Ultra-low Gate charge(Typical 36nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produce 0.195. wfu5n60.pdf WFU5N60
WFU5N60
WFU5N60
WFU5N60
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 4.5A,600V,R (Max2.5Ω)@V =10V
DS(on) GS
� Ultra-low Gate charge(Typical 16nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced usi 0.196. wfp5n60.pdf WFP5N60
WFP5N60
WFP5N60
WFP5N60
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 4.5A,600V,R (Max2.5Ω)@V =10V
DS(on) GS
� Ultra-low Gate charge(Typical 16nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced usi 0.197. wff5n60b.pdf WFF5N60B
WFF5N60B
WFF5N60B
WFF5N60B
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 4.5A,600V,R (Max2.4Ω)@V =10V
DS(on) GS
� Ultra-low Gate charge(Typical 15nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced 0.198. wfp5n60b.pdf WFP5N60B
WFP5N60B
WFP5N60B
WFP5N60B
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 4.5A,600V,R (Max2.4Ω)@V =10V
DS(on) GS
� Ultra-low Gate charge(Typical 15nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced 0.199. wff5n60c.pdf WFF5N60C
WFF5N60C
WFF5N60C
WFF5N60C
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� 4.5A,600V,R (Max2.5Ω)@V =10V
DS(on) GS
� Ultra-low Gate charge(Typical 15nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced 0.200. fhf5n60.pdf Free Datasheet http://www.Datasheet4U.com
FHF5N60说明书
产品描述
FHF5N60为N沟道增强型高压功率MOS场
效应管。该产品广泛适用于AC-DC开关电源,
DC-DC电源转换器,高压H桥PMW马达驱动。
产品特点
DS Ω
DS
DS
DS
★ 5A,600V,R (on)(典型值)1.97
★ 低电荷、低反向传输电容
★ 开关速度快
极限值(TC=25℃)
参数 0.201. iqib75n60a3.pdf IQIB75N60A3
PRELIMINARY DATASHEET
IGBT in Trench & Field Stop-technology in Isolated SOT227 Package
Very high switching speed
1
Very low VCE(sat
Short circuit withstand time – 5 us
Designed for frequency converters and UPS
Very tight parameter distribution
3
High ruggedness, temperature stability
- Parallel switching capability
2, 4
Pb-free lead finish 0.202. iqib75n60d3.pdf IQIB75N60D3
PRELIMINARY DATASHEET
IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel
diode, in Isolated SOT227 Package
1
High switching speed
Low V
CE(sat)
Short circuit withstand time – 5 us
Designed for frequency converters and UPS
Very tight parameter distribution 3
High ruggedness, temperature stability
2, 4
- parallel switch 0.203. iqab75n60a1.pdf IQAB75N60A1
PRELIMINARY DATASHEET
IGBT Trench & Field Stop technology in TO247 Package
• Very high switching speed
• Very low V
CE(sat)
• Short circuit withstand time - 5µs
• Designed for frequency converters and UPS
• Very tight parameter distribution
• High ruggedness, temperature stability
• Parallel switching capability
• Pb-free lead finish; RoHS comp 0.204. iqab75n60d1.pdf IQAB75N60D1
PRELIMINARY DATASHEET
IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel
diode, in TO-247 Package
Very high switching speed
Very low V
CE(sat)
Short circuit withstand time - 5µs
Designed for frequency converters and UPS
Very tight parameter distribution
High ruggedness, temperature stable
Parallel switching capabilit 0.205. cs5n60d.pdf BRD5N60(CS5N60D) N-CHANNEL MOSFET/N 沟道 MOS 晶体管
用途: 用于高功率 DC/DC 转换和功率开关。
Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch mode power supplies.
特点: 低栅电荷,低反馈电容,开关速度快。
Features: Low gate charge, low crss, fast switching.
极限参数/Absolute maximum ratings(Ta=25 0.206. cs5n60f.pdf BRF5N60(CS5N60F) N-CHANNEL MOSFET/N 沟道 MOS 晶体管
用途: 用于高功率 DC/DC 转换和功率开关。
Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch mode power supplies.
特点: 低栅电荷,低反馈电容,开关速度快。
Features: Low gate charge, low crss, fast switching.
极限参数/Absolute maximum ratings(Ta=25 0.207. hfs5n60u.pdf May 2012
BVDSS = 600 V
RDS(on) typ
HFS5N60U
ID = 4.5 A
600V N-Channel MOSFET
TO-220F
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
1
2
3
Robust Gate Oxide Technology
1.Gate 2. Drain 3. Source
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 10.5 nC (Typ.)
Extended Safe Operating Area
0.208. hfs5n60s.pdf Aug 2007
BVDSS = 600 V
RDS(on) typ = 2.0
HFS5N60S
ID = 4.5 A
600V N-Channel MOSFET
TO-220F
FEATURES
1
Originative New Design
2
3
Superior Avalanche Rugged Technology
1.Gate 2. Drain 3. Source
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 10.5 nC (Typ.)
Unrivalled Gate Charge : 10 5 nC (Typ )
0.209. hfp5n60s.pdf Aug 2007
BVDSS = 600 V
RDS(on) typ
HFP5N60S
ID = 4.5 A
600V N-Channel MOSFET
TO-220
FEATURES
Originative New Design 1
2
3
Superior Avalanche Rugged Technology
1.Gate 2. Drain 3. Source
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 10.5 nC (Typ.)
Extended Safe Operating Area
Lower RDS( 0.210. hfd5n60s.pdf Sep 2009
BVDSS = 600 V
RDS(on) typ = 2.0
HFD5N60S / HFU5N60S
ID = 4.3 A
600V N-Channel MOSFET
D-PAK I-PAK
2
2
FEATURES
1
1
3 2
3
Originative New Design
HFD5N60S HFU5N60S
Superior Avalanche Rugged Technology
1.Gate 2. Drain 3. Source
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 10.5 nC (Typ 0.211. hfd5n60u.pdf Jan 2014
BVDSS = 600 V
RDS(on) typ = 2.0
HFD5N60U / HFU5N60U
ID = 3.6 A
600V N-Channel MOSFET
D-PAK I-PAK
FEATURES
2
1
Originative New Design
1
3 2
3
Superior Avalanche Rugged Technology
HFD5N60U HFU5N60U
Robust Gate Oxide Technology
1.Gate 2. Drain 3. Source
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 10.5 nC 0.212. hfp5n60u.pdf May 2012
BVDSS = 600 V
RDS(on) typ
HFP5N60U
ID = 4.5 A
600V N-Channel MOSFET
TO-220
FEATURES
Originative New Design
Superior Avalanche Rugged Technology 1
2
3
Robust Gate Oxide Technology
1.Gate 2. Drain 3. Source
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 10.5 nC (Typ.)
Extended Safe Operating Area
L 0.213. hfw5n60s.pdf Sep 2009
BVDSS = 600 V
RDS(on) typ
HFW5N60S / HFI5N60S
ID = 4.5 A
600V N-Channel MOSFET
D2-PAK I2-PAK
FEATURES
Originative New Design
HFW5N60S HFI5N60S
Superior Avalanche Rugged Technology
1.Gate 2. Drain 3. Source
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 10.5 nC (Typ.)
Extended Saf 0.214. wvm15n60.pdf Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
WVM15N60
Power MOSFET(N-channel) Transistor
Features:
1. It’s voltage control component with good input impedance, small starting power dissipation, wide area
of safe operation, good temperature stability.
2. Implementation of standards: QZJ840611
3. Use for high speed switch, circuit of power source co 0.215. msk7d5n60f msk7d5n60t.pdf 600V/7.5A
N-Channel MOSFET
MSK7D5N60T/F
600V/7.5A N-Channel MOSFET
General Description
• Fast switching time
• Low on resistance, low gate charge
• Excellent avalanche characteristics
• Suitable for active power factor correction
• Suitable for switching mode power supplies
TO-220
Features
• VDSS=600V, ID=7.5A;
• Low Drain-Source ON Resistance:
RDS(ON) = 0.216. msu5n60.pdf 600V/4.5A POWER MOSFET
(N-Channel)
MSU5N60
600V/4.5A Power MOSFET (N-Channel)
General Description
• MSU5N60 is a N-Channel enhancement mode power MOSFET with advanced
TO-220
technology. It is designed to have better characteristics, such as fast switching
time, low gate charge, minimized on-state resistance and withstanding high energy
pulse in the avalanche and commutati 0.217. msk4d5n60f msk4d5n60t.pdf 600V/4.5A
N-Channel MOSFET
MSK4D5N60T/F
600V/4.5A N-Channel MOSFET
General Description
• Fast switching time
• Low on resistance, low gate charge
• Excellent avalanche characteristics
• Suitable for switching mode power supplies
TO-220
Features
• VDSS=600V, ID=4.5A;
• Low Drain-Source ON Resistance:
RDS(ON) =2.5 Ω @ VGS=10V
• Qg(typ.)=17nC
• RoHS C 0.218. tsu45n60.pdf TSU45N60 ®
Table 2. Thermal Characteristic
Symbol Parameter Value Unit
RJC Thermal Resistance,Junction-to-Case 2.7 ℃/W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Unit
On/Off States
BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 60 V
IDSS Zero Gate Voltage Drain Current(Tc=25℃) VDS=60V,VGS=0V 1 μA
0.219. tmd5n60z tmu5n60z.pdf TMD5N60Z(G)/TMU5N60Z(G)
N-channel MOSFET
Features
BVDSS ID RDS(on)MAX
Low gate charge
600V 4.2A <2.1W
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
D-PAK
I-PAK
Device Package Marking Remark
TMD5N60Z / TMU5N60Z D-PAK/I-PAK TMD5N60Z / TMU5N60Z RoHS
TMD5N60ZG / TMU5N60ZG D-PAK/I-PAK TMD5 0.220. tmd5n60az tmu5n60az.pdf TMD5N60AZ(G)/TMU5N60AZ(G)
N-channel MOSFET
Features
Low gate charge
BVDSS ID RDS(on)
100% avalanche tested
600V 4.2A < 2.1W
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Improved ESD performance
D-PAK I-PAK
Device Package Marking Remark
TMD5N60AZ / TMU5N60AZ D-PAK/I-PAK TMD5N60AZ / TMU5N60AZ RoHS
TMD5N 0.221. tmp5n60z tmpf5n60z.pdf TMP5N60Z(G)/TMPF5N60Z(G)
N-channel MOSFET
Features
BVDSS ID RDS(on)
Low gate charge
600V 4.2A <2.1W
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Device Package Marking Remark
TMP5N60Z / TMPF5N60Z TO-220 / TO-220F TMP5N60Z / TMPF5N60Z RoHS
TMPF5N60ZG / TMPF5N60ZG TO-220 / TO-220F TMPF5N60 0.222. tmp5n60az tmpf5n60az.pdf TMP5N60AZ(G)/TMPF5N60AZ(G)
Features
N-channel MOSFET
Low gate charge
BVDSS ID RDS(on)
100% avalanche tested
600V 4.2A < 2.1W
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Improved ESD performance
Device Package Marking Remark
TMP5N60AZ / TMPF5N60AZ TO-220 / TO-220F TMP5N60AZ / TMPF5N60AZ RoHS
TMP5N60AZG 0.223. bt15n60a9f.pdf Silicon FS Planar IGBT R
○
BT15N60A9F
General Description:
VCES 600 V
Using HUAJING's proprietary Planar design and advanced FS
IC 15 A
technology, the 600V FSIGBT offers superior conduction and switching
Ptot TC=25℃) 25 W
performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V
Features:
FS Planar Technology, Positive temperature coeff Size:743K _infineon
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Size:371K _infineon
Size:1150K _infineon
Size:537K _infineon
Size:1621K _infineon
Size:791K _infineon
Size:120K _ixys
Size:167K _ixys
Size:325K _ixys
Size:186K _ixys
Size:316K _ixys
Size:115K _ixys
Size:82K _ixys
Size:113K _ixys
Size:57K _ixys
Size:325K _ixys
Size:167K _ixys
Size:325K _ixys
Size:186K _ixys
Size:479K _mcc
Size:600K _mcc
Size:88K _onsemi
Size:176K _onsemi
Size:88K _onsemi
Size:243K _onsemi
Size:168K _onsemi
Size:83K _onsemi
Size:139K _onsemi
Size:243K _onsemi
Size:80K _onsemi
Size:83K _onsemi
Size:139K _onsemi
Size:177K _onsemi
Size:80K _onsemi
Size:93K _onsemi
Size:237K _utc
Size:323K _utc
Size:487K _fuji
Size:555K _fuji
Size:515K _fuji
Size:565K _fuji
Size:507K _fuji
Size:498K _fuji
Size:518K _fuji
Size:671K _fuji
Size:532K _fuji
Size:556K _fuji
Size:560K _fuji
Size:390K _jiangsu
Size:278K _jiangsu
Size:140K _jiangsu
Size:390K _jiangsu
Size:551K _jiangsu
Size:514K _jiangsu
Size:332K _jiangsu
Size:393K _kec
Size:1619K _kec
Size:1556K _kec
Size:1547K _kec
Size:93K _kec
Size:1323K _kec
Size:89K _kec
Size:385K _kec
Size:58K _hsmc
Size:132K _aosemi
Size:1128K _shenzhen
Size:539K _sisemi
Size:474K _sisemi
Size:320K _cystek
Size:349K _cystek
Size:287K _cystek
Size:329K _cystek
Size:2143K _goford
Size:165K _solitron
Size:491K _silikron
Size:376K _silikron
Size:483K _silikron
Size:688K _blue-rocket-elect
Size:733K _blue-rocket-elect
Size:693K _blue-rocket-elect
Size:370K _nell
Size:727K _shantou-huashan
Size:102K _crhj
Size:125K _china
Size:121K _jdsemi
Size:185K _tysemi
Size:4070K _first_silicon
Size:1198K _magnachip
Size:366K _bruckewell
Size:862K _bruckewell
Size:615K _bruckewell
Size:850K _bruckewell
Size:430K _bruckewell
Size:915K _bruckewell
Size:485K _winsemi
Size:487K _winsemi
Size:490K _winsemi
Size:519K _winsemi
Size:422K _winsemi
Size:490K _winsemi
Size:485K _winsemi
Size:522K _winsemi
Size:527K _winsemi
Size:521K _winsemi
Size:229K _feihonltd
Size:230K _iqxprz
Size:170K _iqxprz
Size:229K _iqxprz
Size:154K _iqxprz
Size:155K _lzg
Size:160K _lzg
Size:311K _semihow
Size:202K _semihow
Size:172K _semihow
Size:205K _semihow
Size:210K _semihow
Size:205K _semihow
Size:175K _semihow
Size:22K _shaanxi
Size:618K _taitron
Size:475K _taitron
Size:617K _taitron
Size:1583K _thinkisemi
Size:461K _trinnotech
Size:457K _trinnotech
Size:615K _trinnotech
Size:610K _trinnotech
Size:102K _wuxi_china
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .