All MOSFET. 5N60 Datasheet

 

5N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: 5N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 42 nS

Drain-Source Capacitance (Cd): 55 pF

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO-220, TO-251, TO-252, TO-220F, TO-220F1, DFN-8

5N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

5N60 Datasheet (PDF)

0.1. tsp5n60m tsf5n60m.pdf Size:656K _1

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TSP5N60M/TSF5N60M 600V N-Channel MOSFET Features ■ 4.5A,600v,RDS(on)=2.2Ω@VGS=10V ■ Gate charge (Typical 17nC) ■ High ruggedness ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology.This latest technology has been especially designed t

0.2. fcp125n60e.pdf Size:771K _1

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November 2015 FCP125N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 29 A, 125 mΩ Features Description • 650 V @TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 102 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 7

 0.3. svf5n60t svf5n60f svf5n60d svf5n60mj.pdf Size:528K _1

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SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

0.4. fcp165n60e.pdf Size:757K _1

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December 2015 FCP165N60E N-Channel SuperFET® II Easy-Drive MOSFET 600 V, 23 A, 165 mΩ Features Description • 650 V @TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing • Typ. RDS(on) = 132 mΩ charge balance technology for outstanding low on-resistance • Ultra Low Gate Charge (Typ. Qg = 5

 0.5. mty25n60e.pdf Size:204K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTY25N60E/D Designer's Data Sheet MTY25N60E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhan

0.6. mgs05n60drev0.pdf Size:135K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGS05N60D/D Designer's Data Sheet MGS05N60D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This IGBT c

0.7. mgp5n60e.pdf Size:94K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP5N60E/D Product Preview Data Sheet MGP5N60E Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate IGBT IN T

0.8. mmg05n60drev0.pdf Size:135K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMG05N60D/D Designer's Data Sheet MMG05N60D Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This IGBT c

0.9. mgp15n60urev0.pdf Size:120K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Product Preview MGP15N60U Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gat

0.10. mty25n60erev2x.pdf Size:236K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTY25N60E/D Designer's Data Sheet MTY25N60E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhan

0.11. mgp15n60u.pdf Size:125K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP15N60U/D Designer's Data Sheet MGP15N60U Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insula

0.12. stp5n60 stp5n60fi.pdf Size:311K _st

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0.13. std5n60m2 stp5n60m2 stu5n60m2.pdf Size:1267K _st

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STD5N60M2, STP5N60M2, STU5N60M2 N-channel 600 V, 1.26 Ω typ., 3.5 A MDmesh II Plus™ low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS @ TJmax RDS(on) max ID 3 STD5N60M2 1 STP5N60M2 650 V 1.4 Ω 3.5 A DPAK STU5N60M2 TAB • Extremely low gate charge TAB • Lower RDS(on) x area vs previous generation 3 3 • Lo

0.14. stb5n60b.pdf Size:86K _st

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STB5NB60  N - CHANNEL 600V - 1.8Ω - 5A- I2PAK PowerMESH MOSFET TYPE VDSS RDS(on) ID STB5NB60 600 V < 2.0 Ω 5 A TYPICAL R = 1.8 Ω DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR SMD D2PAK VERSION CONTACT 2 1 SALES OFFICE I2PAK DESCRIPTION TO-262 Using the latest high voltage MESH OVERLA

0.15. stf5n60m2.pdf Size:534K _st

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STF5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features VDS @ RDS(on) Order code ID TJmax max STF5N60M2 650 V 1.4 Ω 3.7 A • Extremely low gate charge 3 • Lower RDS(on) x area vs previous generation 2 1 • Low gate input resistance TO-220FP • 100% avalanche tested • Zener-protec

0.16. tk25n60x5.pdf Size:370K _toshiba

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TK25N60X5 MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25N60X5 TK25N60X5 TK25N60X5 TK25N60X5 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time: trr = 120 ns(typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.12 Ω(typ.) (3) Easy to control Gate switc

0.17. tk25n60x.pdf Size:244K _toshiba

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TK25N60X MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25N60X TK25N60X TK25N60X TK25N60X 1. Applications 1. Applications 1. Applications 1. Applications • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties wit

0.18. rej03g1118 h5n6001pds.pdf Size:98K _renesas

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.19. sgh15n60rufd.pdf Size:649K _fairchild_semi

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March 2000 IGBT SGH15N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD • Short Circuit rated 10us @ TC = 100°C, VGE = 15V series provides low conduction and switching losses as well • High Speed Switching as short circuit ruggedness. RUFD series is designed for • Low Saturation Voltage : VCE(sat) = 2.2 V @ IC =

0.20. fqb5n60ctm fqb5n60c fqi5n60c fqi5n60ctu.pdf Size:655K _fairchild_semi

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TM QFET FQB5N60C / FQI5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored

0.21. fqpf5n60.pdf Size:624K _fairchild_semi

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TM QFET FQPF5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology has been especially tailored to • Fas

0.22. fqb5n60 fqi5n60.pdf Size:553K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology h

0.23. fca35n60.pdf Size:764K _fairchild_semi

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March 2009 SuperFETTM FCA35N60 600V N-Channel MOSFET Features Description SuperFETTM is Farichild’s proprietary, new generation of high • 650V @ TJ = 150°C voltage MOSFET family that is utilizing an advanced charge bal- • Typ.RDS(on) = 0.079Ω ance mechanism for outstanding low on-resistance and lower • Ultra low gate charge ( Typ. Qg = 139nC ) gate charge performance.

0.24. fqd5n60ctf fqd5n60ctm fqd5n60c fqu5n60c fqu5n60ctu.pdf Size:636K _fairchild_semi

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October 2008 QFET® FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especia

0.25. fcp25n60n f102.pdf Size:455K _fairchild_semi

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March 2013 FCP25N60N_F102 N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features Description • RDS(on) = 107 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next- generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiate it from •

0.26. fqp5n60c fqpf5n60c fqpf5n60cydtu.pdf Size:858K _fairchild_semi

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TM QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

0.27. fcp25n60n.pdf Size:697K _fairchild_semi

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November 2013 FCP25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next • RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiates it from • Low Ef

0.28. fcu5n60.pdf Size:320K _fairchild_semi

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August 2014 FCD5N60 / FCU5N60 N-Channel SuperFET® MOSFET 600 V, 4.6 A, 950 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor’s first genera- tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 810 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 16 nC) resis

0.29. fcd5n60 fcu5n60.pdf Size:973K _fairchild_semi

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December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.81Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc

0.30. fch25n60n.pdf Size:579K _fairchild_semi

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January 2011 SupreMOS® FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS(on) = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech- n

0.31. fdd5n60nz.pdf Size:630K _fairchild_semi

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November 2013 FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features Description • RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 10 nC) technology. This advanced MOSFET family has the smallest • Low Crss (Typ. 5 pF) on-stat

0.32. fcd5n60tm ws.pdf Size:938K _fairchild_semi

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December 2008 TM SuperFET FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.81Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=16nC) lower gate charge performanc

0.33. fci25n60n f102.pdf Size:421K _fairchild_semi

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June 2010 TM SupreMOS FCI25N60N_F102 tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS(on) = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech-

0.34. fqpf5n60c.pdf Size:1159K _fairchild_semi

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December 2013 FQP5N60C / FQPF5N60C N-Channel QFET® MOSFET 600 V, 4.5 A, 2.5 Ω Description Features This N-Channel enhancement mode power MOSFET is 4.5 A, 600 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, • produced using Fairchild Semiconductor’s proprietary planar ID = 2.25 A stripe and DMOS technology. This advanced MOSFET • Low Gate Charge (Typ. 15 nC) technology has been

0.35. fgh75n60uf.pdf Size:258K _fairchild_semi

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April 2009 FGH75N60UF tm 600V, 75A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for • Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A Induction Heating, UPS, SMPS and PFC applications where low • High Input Impedance conduction and switch

0.36. fgp5n60ls.pdf Size:246K _fairchild_semi

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February 2010 FGP5N60LS tm 600V, 5A Field Stop IGBT Features General Description • High Current Capability Using novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for HID bal- • Low Saturation Voltage: VCE(sat) =1.7V @ IC = 5A last where low conduction losses are essential. • High Input Impedance • RoHS Compliant Appl

0.37. fch35n60.pdf Size:1434K _fairchild_semi

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February 2010 SuperFETTM FCH35N60 600V N-Channel MOSFET Features Description SuperFETTM is Farichild’s proprietary, new generation of high • 650V @ TJ = 150°C voltage MOSFET family that is utilizing an advanced charge • Typ.RDS(on) = 0.079Ω balance mechanism for outstanding low on-resistance and lower • Ultra low gate charge ( Typ. Qg = 139nC ) gate charge performance.

0.38. sgs5n60rufd.pdf Size:614K _fairchild_semi

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April 2001 IGBT SGS5N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar • Short circuit rated 10us @ TC = 100°C, VGE = 15V Transistors (IGBTs) provide low conduction and switching • High speed switching losses as well as short circuit ruggedness. The RUFD • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 5A series is

0.39. fdp5n60nz fdpf5n60nz.pdf Size:265K _fairchild_semi

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November 2010 TM UniFET-II FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0 Features Description • RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low Gate Charge ( Typ. 10nC) stripe, DMOS technology. • Low Crss ( Typ. 5pF) This advanced techno

0.40. fdd5n60nztm.pdf Size:235K _fairchild_semi

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December 2010 TM UniFET-II FDD5N60NZ N-Channel MOSFET 600V, 4.0A, 2 Features Description • RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2.0A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS • Low Gate Charge ( Typ. 10nC) technology. • Low Crss ( Typ. 5pF) This advance technology has been e

0.41. fqb5n60tm.pdf Size:551K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQB5N60 / FQI5N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.0A, 600V, RDS(on) = 2.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.0 pF) This advanced technology h

0.42. fci25n60n.pdf Size:598K _fairchild_semi

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November 2013 FCI25N60N N-Channel SupreMOS® MOSFET 600 V, 25 A, 125 mΩ Features Description The SupreMOS® MOSFET is Fairchild Semiconductor’s next • RDS(on) = 107 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A generation of high voltage super-junction (SJ) technology • Ultra Low Gate Charge (Typ. Qg = 57 nC) employing a deep trench filling process that differentiates it from • Low Ef

0.43. irfba35n60c.pdf Size:48K _international_rectifier

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PD - 93800A PROVISIONAL IRFBA35N60C SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 0.080Ω 35A High Speed Power Switching Benefits Low Gate Charge Qg Reduces Drive Required Improved Gate Resistance for Faster Switching Fully Characterized Capacitance and Avalanche Voltage and Current Sup

0.44. irfp15n60l.pdf Size:198K _international_rectifier

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PD - 94415A SMPS MOSFET IRFP15N60L Applications HEXFET® Power MOSFET • Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 600V 385mΩ 130ns 15A • Motor Control applications Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate c

0.45. irfp15n60lpbf.pdf Size:208K _international_rectifier

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PD - 95517 SMPS MOSFET IRFP15N60LPbF Applications HEXFET® Power MOSFET • Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 600V 385mΩ 130ns 15A • Motor Control applications • Lead-Free Features and Benefits • SuperFast body diode eliminates the need for external diodes in ZVS applications.

0.46. mtp5n60.pdf Size:56K _njs

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0.47. sgh15n60rufd.pdf Size:268K _samsung

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CO-PAK IGBT SGH15N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 42nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

0.48. sgw5n60ruf.pdf Size:281K _samsung

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N-CHANNEL IGBT SGW5N60RUF FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES

0.49. sgp15n60ruf.pdf Size:228K _samsung

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N-CHANNEL IGBT SGP15N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=15A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCE

0.50. sgw5n60rufd.pdf Size:325K _samsung

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CO-PAK IGBT SGW5N60RUFD FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ.) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

0.51. sgp5n60ruf.pdf Size:280K _samsung

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N-CHANNEL IGBT SGP5N60RUF FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls G * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES

0.52. sgp5n60rufd.pdf Size:324K _samsung

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CO-PAK IGBT SGP5N60RUFD FEATURES TO-220 * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.0 V @ Ic=5A * High Input Impedance * CO-PAK, IGBT with FRD : Trr = 37nS (Typ.) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS

0.53. ssh15n60 ssh15n55.pdf Size:394K _samsung

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查询SSH15N55供应商 捷多邦,专业PCB打样工厂,24小时 加急出货

0.54. rdx045n60fu6.pdf Size:82K _rohm

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RDX045N60 Transistors 10V Drive Nch MOS FET RDX045N60 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TO-220FM 10.0 φ3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 2) Low input capacitance. 1.3 3) Excellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain (1) (2) (3) Applications (3)Source Switching P

0.55. siha15n60e.pdf Size:170K _vishay

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SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Qg max. (nC) 76 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (UIS) Qgd (nC) 17 •

0.56. irfp15n60lpbf.pdf Size:147K _vishay

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IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) (Ω)VGS = 10 V 0.385 RoHS* • Lower Gate Charge Results in Simple Drive Qg (Max.) (nC) 100 COMPLIANT Requirements Qgs (nC) 30 Qgd (nC) 46 • Enhanced dV/dt Capabilities Offer Improved

0.57. sihp15n60e.pdf Size:207K _vishay

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SiHP15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •

0.58. sihf15n60e.pdf Size:136K _vishay

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5N60

SiHF15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •

0.59. sihb15n60e.pdf Size:199K _vishay

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5N60

SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 • Low Input Capacitance (Ciss) RDS(on) max. at 25 °C () VGS = 10 V 0.28 • Reduced Switching and Conduction Losses Qg max. (nC) 76 • Ultra Low Gate Charge (Qg) Qgs (nC) 11 • Avalanche Energy Rated (UIS) Qgd (nC) 17 •

0.60. skb15n60hsg.pdf Size:1181K _infineon

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5N60

SKB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • High ruggedne

0.61. ikw75n60t.pdf Size:853K _infineon

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5N60

IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s G  Positive temperature coefficient in VCE(sat) E  very tight parameter distribution  high rugg

0.62. igp15n60trev2 2g.pdf Size:399K _infineon

5N60
5N60

 IGP15N60T TrenchStop® Series q Low Loss IGBT in TrenchStop® and Fieldstop technology C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G • Designed for : E - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight p

0.63. spw15n60cfd.pdf Size:700K _infineon

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5N60

SPW15N60CFD TM CססIMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0. 0 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 1 .4 A D V 2 AIG6 ADL <6I: 8=6G<: PG‐TO247 V "MIG:B: 9v /dt G6I:9 /d V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 688DG9>C< ID '"!" ::7 "% /0=4290/ 1:< V 0D;IHL>I8=>C< -4* 0I6<:H V ) ! / 1

0.64. spw15n60c3.pdf Size:743K _infineon

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5N60

 VDS Tjmax Ω • • G • • • • G

0.65. spw35n60cfd.pdf Size:943K _infineon

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5N60

SPW35N60CFD TM CססIMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features D D U * 9K F9JC@IH=CB5FM <=;< JC@H5;9 H970.66. sgw15n60.pdf Size:331K _infineon

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5N60

 SGP15N60 SGW15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

0.67. sgp15n60 sgw15n60g.pdf Size:333K _infineon

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5N60

 SGP15N60 SGW15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

0.68. skw15n60.pdf Size:369K _infineon

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5N60

SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high

0.69. ikd15n60rf.pdf Size:1874K _infineon

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5N60

IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60RF TRENCHSTOPTM RC-Series for hard switching applications up to 30 kHz Data sheet Industrial Power Control IKD15N60RF TRENCHSTOPTM RC-Drives Fast Series IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applica

0.70. sgb15n60hs .pdf Size:815K _infineon

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5N60

SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D²-PAK) - moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

0.71. ika15n60t.pdf Size:565K _infineon

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5N60

IKA15N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C G  Short circuit withstand time 5s E  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight par

0.72. igw75n60h3.pdf Size:1543K _infineon

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5N60

IGBT High speed IGBT in Trench and Fieldstop technology IGW75N60H3 600V high speed switching series third generation Data sheet Industrial & Multimarket IGW75N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features: C TRENCHSTOPTM technology offering • very low V CEsat • low EMI • maximum junction temperature 175°C

0.73. ikd15n60ra.pdf Size:2331K _infineon

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5N60

IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60RA 600V TRENCHSTOPTM RC-Series for hard switching applications Data sheet Industrial Power Control IKD15N60RA TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 6

0.74. skb15n60hs.pdf Size:1176K _infineon

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5N60

SKB15N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • High ruggedne

0.75. skp15n60.pdf Size:369K _infineon

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5N60

SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high

0.76. spi15n60cfd b.pdf Size:559K _infineon

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5N60

SPI15N60CFD CססIMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features V 1?B6M 650 V !0 V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0. 0 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 1 .4 A D V 2 AIG6 ADL <6I: 8=6G<: PG‐TO262 V "MIG:B: 9v /dt G6I:9 V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" ;;8!#& 01>53:10 2;= V 0D;IHL>I8

0.77. ikp15n60trev2 2g.pdf Size:454K _infineon

5N60
5N60

 IKP15N60T TrenchStop® Series q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G E • Designed for : - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fiel

0.78. ikd15n60r.pdf Size:1797K _infineon

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5N60

IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60R, IKU15N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD15N60R, IKU15N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (R

0.79. iku15n60r.pdf Size:1797K _infineon

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5N60

IGBT IGBT with integrated diode in packages offering space saving advantage IKD15N60R, IKU15N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD15N60R, IKU15N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features: TRENCHSTOPTM Reverse Conducting (R

0.80. igb15n60trev2 4g.pdf Size:1188K _infineon

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5N60

 IGB15N60T TrenchStop® Series q Low Loss IGBT in TrenchStop® technology C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G • Designed for frequency inverters for washing machines, fans, E pumps and vacuum cleaners • TrenchStop® technology for 600 V applications offers : - very tight parameter distr

0.81. spa15n60cfd.pdf Size:575K _infineon

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5N60

SPA15N60CFD CססIMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features V 1?B6M 650 V !0 V &CIG>CH>8 ;6HI G:8DK:GN 7D9N 9>D9: R 0. 0 DS(on) max V "MIG:B:AN ADL G:K:GH: G:8DK:GN 8=6G<: I 1 .4 A D V 2 AIG6 ADL <6I: 8=6G<: V "MIG:B: 9v /dt G6I:9 PG‐TO220FP V %><= E:6@ 8JGG:CI 86E67>A>IN V . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" ;;8!#& 01>53:10 2;= V 0D;IHL>I

0.82. ika15n60trev2 3g.pdf Size:517K _infineon

5N60
5N60

 IKA15N60T TrenchStop® Series q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5μs G E • TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter di

0.83. skb15n60.pdf Size:599K _infineon

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5N60

SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C  75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s G E  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  NPT-Technology for 600V applications offers: - very

0.84. ikb15n60t.pdf Size:692K _infineon

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5N60

IKB15N60T TrenchStop® Series q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled 3 diode C  Very low VCE(sat) 1.5 V (typ.)  Maximum Junction Temperature 175 °C  Short circuit withstand time – 5s G E  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  Tr

0.85. ikw75n60trev2 6g.pdf Size:405K _infineon

5N60
5N60

 IKW75N60T TrenchStop® Series q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C G • Short circuit withstand time – 5µs E • Positive temperature coefficient in VCE(sat) • very tight parameter distribution • high rugg

0.86. sgp15n60.pdf Size:331K _infineon

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5N60

 SGP15N60 SGW15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral

0.87. spp15n60c3 spi15n60c3 spa15n60c3 rev.3.2new.pdf Size:684K _infineon

5N60
5N60

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.28 Ω • New revolutionary high voltage technology ID 15 A • Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 3 • Ultra low effective capacitances 2 1 P-TO220-3-31 • Improved transconductance • PG-TO-220-3-31;-3-111

0.88. igw75n60t.pdf Size:541K _infineon

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IGW75N60T TRENCHSTOP™ Series q Low Loss IGBT: IGBT in TRENCHSTOP™ and Fieldstop technology C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s G  Designed for : E - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight p

0.89. spw35n60c3.pdf Size:760K _infineon

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5N60

SPW35N60C3 CoolMOSTM Power Transistor Product Summary Features V @ T 650 V DS j,max • New revolutionary high voltage technology R 0.1 Ω DS(on),max • Ultra low gate charge I 34.6 A D • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances PG-TO247 • Improved transconductance Type Package Ordering Code Marking SPW35N60C3 PG-TO247 Q6704

0.90. igw75n60t rev2 5g.pdf Size:397K _infineon

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5N60

 IGW75N60T TrenchStop® Series q Low Loss IGBT in TrenchStop® and Fieldstop technology C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G • Designed for : E - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 600 V applications offers : PG-TO-247-3

0.91. ikb15n60trev2 5g.pdf Size:1222K _infineon

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5N60

 IKB15N60T TrenchStop® Series q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs G E • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • Trench

0.92. igp15n60t.pdf Size:540K _infineon

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5N60

IGP15N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C G  Short circuit withstand time 5s E  Designed for : - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight

0.93. igb15n60t.pdf Size:676K _infineon

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5N60

IGB15N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C G E Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  TRENCHSTOP™ technology for 600V applications offers : - very t

0.94. sgb15n60.pdf Size:788K _infineon

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 SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

0.95. ikp15n60t.pdf Size:572K _infineon

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5N60

IKP15N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s G  Designed for : E - Frequency Converters - Uninterrupted Power Supply  TRENCHSTOP™

0.96. sgb15n60hs.pdf Size:813K _infineon

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SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability PG-TO-263-3-2 (D²-PAK) - moderate Eoff increase with temperature (TO-263AB) - very tight parameter distri

0.97. skp15n60 skw15n60.pdf Size:371K _infineon

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5N60

SKP15N60 SKW15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high

0.98. skb15n60g.pdf Size:1150K _infineon

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5N60

SKB15N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • NPT-Technology for 600V applications offers: - very tight

0.99. spp15n60cfd.pdf Size:537K _infineon

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5N60

SPP15N60CFD CoolMOSTM Power Transistor Product Summary Features V @ Tjmax 650 V DS • Intrinsic fast-recovery body diode R 0.330 DS(on),max • Extremely low reverse recovery charge I 13.4 A D • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability • Qualified for industrial grade applications according to JEDEC1) CoolMOS CFD designed fo

0.100. ikw75n60h3.pdf Size:1621K _infineon

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5N60

IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW75N60H3 600V high speed switching series third generation Data sheet Industrial & Multimarket IKW75N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features: TRENCHSTOPTM technology offering • very low V CEsat

0.101. sgb15n60g.pdf Size:791K _infineon

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5N60

 SGB15N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -

0.102. ixta5n60p ixtp5n60p.pdf Size:120K _ixys

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5N60

VDSS = 600 V IXTA 5N60P PolarHVTM ID25 = 5 A IXTP 5N60P Power MOSFET ≤ Ω RDS(on) ≤ 1.7 Ω ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25°C to 175°C 600 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 600 V VGSS Continuous ± 30 V G VGSM Transient ± 40 V S (TAB) ID25 TC = 25°C5 A TO-220 (I

0.103. ixxh75n60c3.pdf Size:167K _ixys

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5N60

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH75N60C3 GenX3TM IC110 = 75A ≤ ≤ VCE(sat) ≤ 2.2V ≤ ≤ tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C Tab E VGEM Transient

0.104. ixdp35n60b.pdf Size:325K _ixys

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5N60

IXDP 35N60 B VCES = 600 V IGBT IXDH 35N60 B IC25 = 60 A with optional Diode IXDH 35N60 BD1 VCE(sat) typ = 2.1 V High Speed, Low Saturation Voltage C C TO-247 AD IXDH ... G G G E E C C (TAB) E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 B Symbol Conditions Maximum Ratings TO-220 AB IXDP ... VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kW 600 V G C E VG

0.105. ixxh75n60c3d1.pdf Size:186K _ixys

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5N60

Preliminary Technical Information XPTTM 600V IGBT VCES = 600V IXXH75N60C3D1 GenX3TM w/ Diode IC110 = 75A ≤ ≤ VCE(sat) ≤ 2.2V ≤ ≤ tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C Tab E V

0.106. ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf Size:316K _ixys

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5N60

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine

0.107. ixdr35n60bd1.pdf Size:115K _ixys

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5N60

IXDR 35N60 BD1 VCES = 600 V IGBT IC25 = 38 A with optional Diode VCE(sat) typ= 2.2 V High Speed, Low Saturation Voltage C ISOPLUS 247TM G G C E Isolated back surface E G = Gate, E = Emitter C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features ● NPT IGBT technology VCES TJ = 25°C to 150°C 600 V ● low switching losses VCGR TJ = 25°C to 150°C;

0.108. ixfh15n60 ixfh20n60 ixfm15n60 ixfm20n60.pdf Size:82K _ixys

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5N60

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 15 N60 600 V 15 A 0.50 W Power MOSFETs IXFH/IXFM 20 N60 600 V 20 A 0.35 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 2

0.109. ixkp35n60c5.pdf Size:113K _ixys

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5N60

IXKH 35N60C5 Advanced Technical Information IXKP 35N60C5 ID25 = 35 A CoolMOS™ 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.1 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D D(TAB) S S TO-220 AB (IXKP) G D S Features MOSFET • fast CoolMOS™ 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation V

0.110. ixgb75n60bd1.pdf Size:57K _ixys

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5N60

ADVANCE TECHNICAL INFORMATION IXGB 75N60BD1 VCES = 600 V HiPerFASTTM IC25 = 120 A IGBT with Diode VCE(sat) = 2.3 V tfi = 150 ns Symbol Test Conditions Maximum Ratings PLUS 264 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G (TAB) VGEM Transient ±30 V C E IC25 TC = 25°C 120 A G = Gate C = Collector IC90 TC = 90°C75 A

0.111. ixdh35n60bd1.pdf Size:325K _ixys

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5N60

IXDP 35N60 B VCES = 600 V IGBT IXDH 35N60 B IC25 = 60 A with optional Diode IXDH 35N60 BD1 VCE(sat) typ = 2.1 V High Speed, Low Saturation Voltage C C TO-247 AD IXDH ... G G G E E C C (TAB) E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 B Symbol Conditions Maximum Ratings TO-220 AB IXDP ... VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kW 600 V G C E VG

0.112. ixxh75n60b3.pdf Size:167K _ixys

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5N60

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH75N60B3 GenX3TM IC110 = 75A ≤ ≤ VCE(sat) ≤ 1.85V ≤ ≤ tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V G C VGES Continuous ±20 V Tab E VGEM Transient ±

0.113. ixdh35n60b.pdf Size:325K _ixys

5N60
5N60

IXDP 35N60 B VCES = 600 V IGBT IXDH 35N60 B IC25 = 60 A with optional Diode IXDH 35N60 BD1 VCE(sat) typ = 2.1 V High Speed, Low Saturation Voltage C C TO-247 AD IXDH ... G G G E E C C (TAB) E IXDH 35N60 B IXDH 35N60 BD1 IXDP 35N60 B Symbol Conditions Maximum Ratings TO-220 AB IXDP ... VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 20 kW 600 V G C E VG

0.114. ixxh75n60b3d1.pdf Size:186K _ixys

5N60
5N60

Preliminary Technical Information XPTTM 600V IGBT VCES = 600V IXXH75N60B3D1 GenX3TM w/ Diode IC110 = 75A ≤ ≤ VCE(sat) ≤ 1.85V ≤ ≤ tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 600 V VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V G VGES Continuous ±20 V C Tab E

0.115. mcu05n60.pdf Size:479K _mcc

5N60
5N60



0.116. mcpf05n60b.pdf Size:600K _mcc

5N60
5N60



0.117. ngtb75n60swg.pdf Size:88K _onsemi

5N60
5N60

NGTB75N60SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com c

0.118. ngtb15n60eg.pdf Size:176K _onsemi

5N60
5N60

NGTB15N60EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http://onsemi.co

0.119. ngtb75n60s.pdf Size:88K _onsemi

5N60
5N60

NGTB75N60SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com c

0.120. ngtb75n60fl2wg.pdf Size:243K _onsemi

5N60
5N60

NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C 75 A, 600 V

0.121. ngtg15n60s1.pdf Size:168K _onsemi

5N60
5N60

NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http://onsemi.

0.122. ngtb45n60s2.pdf Size:83K _onsemi

5N60
5N60

NGTB45N60S2WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

0.123. ngtb45n60swg.pdf Size:139K _onsemi

5N60
5N60

NGTB45N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

0.124. ngtb75n60fl2.pdf Size:243K _onsemi

5N60
5N60

NGTB75N60FL2WG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. Features www.onsemi.com • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C 75 A, 600 V

0.125. ngtb45n60s1.pdf Size:80K _onsemi

5N60
5N60

NGTB45N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

0.126. ngtb45n60s2wg.pdf Size:83K _onsemi

5N60
5N60

NGTB45N60S2WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

0.127. ngtb45n60s.pdf Size:139K _onsemi

5N60
5N60

NGTB45N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack

0.128. ngtb15n60s1.pdf Size:177K _onsemi

5N60
5N60

NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching http://onsemi.

0.129. ngtb45n60s1wg.pdf Size:80K _onsemi

5N60
5N60

NGTB45N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com

0.130. ngtb35n60fl2wg.pdf Size:93K _onsemi

5N60
5N60

NGTB35N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons

0.131. 15n60.pdf Size:237K _utc

5N60
5N60

UNISONIC TECHNOLOGIES CO., LTD 15N60 Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1 TO-247  DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It 1 also can with

0.132. 5n60.pdf Size:323K _utc

5N60
5N60

UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

0.133. fmv05n60e.pdf Size:487K _fuji

5N60
5N60

FMV05N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.

0.134. fgw35n60hd.pdf Size:555K _fuji

5N60
5N60

http://www.fujielectric.com/products/semiconductor/ FGW35N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 35A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

0.135. fmi05n60e.pdf Size:515K _fuji

5N60
5N60

FMI05N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

0.136. fgw35n60hc.pdf Size:565K _fuji

5N60
5N60

http://www.fujielectric.com/products/semiconductor/ FGW35N60HC Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 35A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

0.137. fmp05n60e.pdf Size:507K _fuji

5N60
5N60

FMP05N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

0.138. fgw75n60h.pdf Size:498K _fuji

5N60
5N60

http://www.fujielectric.com/products/semiconductor/ FGW75N60H Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absol

0.139. fmc05n60e.pdf Size:518K _fuji

5N60
5N60

FMC05N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

0.140. fmh35n60s1fd.pdf Size:671K _fuji

5N60
5N60

http://www.fujielectric.com/products/semiconductor/ FMH35N60S1FD FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-3P(Q) φ3.2± 0.1 15.5max 1.5±0.2 13 ± 0.2 4.5±0.2 Low switching loss 10 ± 0.2 easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applica

0.141. fgw85n60rb.pdf Size:532K _fuji

5N60
5N60

http://www.fujielectric.com/products/semiconductor/ FGW85N60RB Discrete IGBT Reverse Blocking IGBT 600V / 85A Features Reverse blocking characteristic for 1 chip by Fuji's original technology. High efficiency by applying to T-type 3 level inverter circuit. Applications Uninterruptible power supply Power conditioner Battery system Maximum Ratings and Characteristics Equivalent circu

0.142. fgw35n60h.pdf Size:556K _fuji

5N60
5N60

http://www.fujielectric.com/products/semiconductor/ FGW35N60H Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 35A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absol

0.143. fgw75n60hd.pdf Size:560K _fuji

5N60
5N60

http://www.fujielectric.com/products/semiconductor/ FGW75N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso

0.144. cju05n60b.pdf Size:390K _jiangsu

5N60
5N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU05N60B N-Channel Power MOSFET TO-252-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hi

0.145. cju05n60.pdf Size:278K _jiangsu

5N60
5N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU05N60 N-CHANNEL POWER MOSFET TO-252-2L DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage,

0.146. cjp05n60b.pdf Size:140K _jiangsu

5N60
5N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60B N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new 1. GATE high energy device also offers a drain-to-source diode fast 2. DRAIN recovery time. Desighed

0.147. cjpf05n60b.pdf Size:390K _jiangsu

5N60
5N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF05N60B N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

0.148. cjp05n60.pdf Size:551K _jiangsu

5N60
5N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60 N-Channel Power MOSFET TO-220-3L Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, h

0.149. cjpf05n60.pdf Size:514K _jiangsu

5N60
5N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF05N60 N-Channel Power MOSFET TO-220F Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast 1. GATE recovery time. 2. DRAIN 123 Des

0.150. cjd05n60b.pdf Size:332K _jiangsu

5N60
5N60

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD05N60B N-Channel Power MOSFET TO-251S GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

0.151. kf5n60fz.pdf Size:393K _kec

5N60
5N60

KF5N60P/F/PZ/FZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P, KF5N60PZ A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ + switching mode pow

0.152. kgt15n60fda.pdf Size:1619K _kec

5N60
5N60

SEMICONDUCTOR KGT15N60FDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness as well as short circuit ruggedness. It is designed for hard switching applications. FEATURES ·High speed switching ·High system efficiency ·Short Circuit Withstand Times ⋎5us(@TC=100℃) ·Extremely enhanced avalanch

0.153. kgf75n60kdb.pdf Size:1556K _kec

5N60
5N60

SEMICONDUCTOR KGF75N60KDB TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness, temperature stable behavior ·Short Circuit Withstand T

0.154. kgf15n60fda.pdf Size:1547K _kec

5N60
5N60

SEMICONDUCTOR KGF15N60FDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power FEATURES ·High speed switching ·High ruggedness, temperature stable behavior ·Short Circuit Withstand Times ⋎5us(@TC=100℃) ·Extremel

0.155. kf5n60p-f.pdf Size:93K _kec

5N60
5N60

KF5N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for electronic ballast and E DIM MILLIMETERS G _ switching mode power supplies. A 9.9

0.156. khb7d5n60p1 f1 f2.pdf Size:1323K _kec

5N60
5N60

KHB7D5N60P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB7D0N60P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES ·VDSS

0.157. khb4d5n60p f f2.pdf Size:89K _kec

5N60
5N60

KHB4D5N60P/F/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB4D5N60P A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ A 9.9 + 0.2 avalanche characteristics. It is mainly suitable for switching mode B B 15.95 MAX Q pow

0.158. kf5n60d i.pdf Size:385K _kec

5N60
5N60

KF5N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF5N60D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 ele

0.159. h05n60.pdf Size:58K _hsmc

5N60
5N60

Spec. No. : MOS200603 HI-SINCERITY Issued Date : 2006.02.01 Revised Date : 2006.02.07 MICROELECTRONICS CORP. Page No. : 1/5 H05N60 Series Pin Assignment H05N60 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source 3 This advanced high voltage MOSFET is designed to withstand high 2 1

0.160. aot5n60.pdf Size:132K _aosemi

5N60
5N60

AOT5N60 600V,5A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT5N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 5A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) <1.8Ω DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanch

0.161. sss5n60.pdf Size:1128K _shenzhen

5N60
5N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N60 SSS5N60 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts 4 Amps,600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET ■ DESCRIPTION The SSS5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

0.162. sif5n60c.pdf Size:539K _sisemi

5N60
5N60

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N

0.163. sif5n60c 1.pdf Size:474K _sisemi

5N60
5N60

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANNEL POWER MOSFET SIF5N60C N- MOS / N-CHANN

0.164. mtn5n60e3.pdf Size:320K _cystek

5N60
5N60

Spec. No. : C408E3-A Issued Date : 2010.09.08 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω(typ.) MTN5N60E3 ID : 4.5A Description The MTN5N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

0.165. mtn5n60j3.pdf Size:349K _cystek

5N60
5N60

Spec. No. : C408J3 Issued Date : 2010.03.09 CYStech Electronics Corp. Revised Date :2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω(typ.) MTN5N60J3 ID : 5A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating package Applications

0.166. mtn5n60fp.pdf Size:287K _cystek

5N60
5N60

Spec. No. : C408FP-A Issued Date : 2009.04.20 CYStech Electronics Corp. Revised Date : 2013.08.12 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω(typ.) MTN5N60FP ID : 4.5A Description The MTN5N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low

0.167. mtn5n60i3.pdf Size:329K _cystek

5N60
5N60

Spec. No. : C408I3-A Issued Date : 2010.03.09 CYStech Electronics Corp. Revised Date : 2012.11.20 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω (typ.) MTN5N60I3 ID : 5A Description The MTN5N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on

0.168. 5n60 5n60f.pdf Size:2143K _goford

5N60
5N60

GOFORD 5N60/5N60F 600V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe, DMOS 600V 2.5Ω 4.5A technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellen

0.169. sdf15n60.pdf Size:165K _solitron

5N60



0.170. ssf5n60g.pdf Size:491K _silikron

5N60
5N60

 SSF5N60G Main Product Characteristics: VDSS 600V RDS(on) 1.88Ω (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

0.171. ssf5n60f.pdf Size:376K _silikron

5N60
5N60

 SSF5N60F  Main Product Characteristics: VDSS 600V RDS(on) 2ohm(typ.) ID 4A Marking and pin TO220F Schematic diagram  Features and Benefits: Assignment  Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150

0.172. ssf5n60d.pdf Size:483K _silikron

5N60
5N60

 SSF5N60D Main Product Characteristics: VDSS 600V RDS(on) 1.88Ω (typ.) ID 5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

0.173. brd5n60.pdf Size:688K _blue-rocket-elect

5N60
5N60

BRD5N60(BRCS5N60D) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-252 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-252 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high

0.174. brf5n60.pdf Size:733K _blue-rocket-elect

5N60
5N60

BRF5N60(BRCS5N60F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for hi

0.175. bri5n60.pdf Size:693K _blue-rocket-elect

5N60
5N60

BRI5N60(BRCS5N60I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 N 沟道 MOS 晶体管。N-CHANNEL MOSFET in a TO-251 Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高功率 DC/DC 转换和功率开关。 These devices are well suited for high ef

0.176. 5n60a 5n60af 5n60g.pdf Size:370K _nell

5N60
5N60

RoHS 5N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (5A, 600Volts) DESCRIPTION D The Nell 5N60 is a three-terminal silicon D device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications such

0.177. hff5n60.pdf Size:727K _shantou-huashan

5N60
5N60

 Shantou Huashan Electronic Devices Co.,Ltd. HFF5N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220F They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

0.178. bt15n60a9f.pdf Size:102K _crhj

5N60
5N60

Silicon FS Planar IGBT R ○ BT15N60A9F General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25℃) 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features: FS Planar Technology, Positive temperature coeff

0.179. cs15n60.pdf Size:125K _china

5N60

CS15N60 型 N 沟道场效应晶体管 参数符号 测试条件 最小值 典型值 最大值 单位 PD TC=25℃ 280 W 线性降低系数 2.3 W/℃ ID (VGS=10V,TC=25℃) 15 A 极 ID (VGS=10V,TC=100℃) 9.7 A 限 IDM 60 A 值 VGS ±30 V Tjm +150 ℃ Tstg -55 +150 ℃ 热 特 RthJC 0.44 ℃/W 性 BVDSS VGS=0V,ID=0.25mA 600 V RDS on) VGS=10V,ID=9A 0.46 Ω

0.180. 1d5n60.pdf Size:121K _jdsemi

5N60
5N60

R 1D5N60 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于电源适配器、线形放大 以及功率开关电路 2.主要特点 开关速度快 通态电阻小,输入电容小 3.封装外形

0.181. kqb5n60.pdf Size:185K _tysemi

5N60
5N60

SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMDType SMDType IC Product specification KQB5N60 TO-263 Unit: mm Features 4.57+0.2 -0.2 +0.1 5.0A, 600 V. RDS(ON) =2.0 @VGS =10V 1.27-0.1 Low gate charge (typical 16nC) Low Crss(typical 9.0pF) Fast switching +0.1 0.1max 100% avalanche teste

0.182. fir5n60fg.pdf Size:4070K _first_silicon

5N60
5N60

FIR5N60FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=9.8F(Typ.) • Low gate charge : Qg=12nC(Typ.) G D S • Low RDS(on) :RDS(on)=1.7Ω D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR5N60F FIR5N60F = Specific Device Code Absolute maxi

0.183. mdf15n60gth mdp15n60gth.pdf Size:1198K _magnachip

5N60
5N60

 MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω General Description Features These N-channel MOSFET are produced using advanced  V = 600V DS MagnaChip’s MOSFET Technology, which provides low on-  I = 15A @ V = 10V D GS state resistance, high switching performance and excellent  R ≤ 0.40Ω @ V = 10V DS(ON) GS quality. Applications These devices are sui

0.184. ms15n60.pdf Size:366K _bruckewell

5N60
5N60

MS15N60 N-Channel Enhancement Mode Power MOSFET Description The MS15N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simpl

0.185. msf5n60.pdf Size:862K _bruckewell

5N60
5N60

MSF5N60 N-Channel Enhancement Mode Power MOSFET Description The MSF5N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Sim

0.186. dms05n60.pdf Size:615K _bruckewell

5N60
5N60

 DMS05N60 N-Channel Depletion-Mode MOSFET FEATURES • Depletion Mode (Normally On) • Advanced Planar Technology • Rugged Poly-silicon Gate Cell Structure • Fast Switching Speed • RoHS Compliant/Lead Free • ESD Sensitive BVDSX RDS(ON) (Max.) IDSS,min Applications 600V 700Ω 12mA • Normally-on Switches • SMPS start-up Circuit • Linear Amplifier • Con

0.187. ms5n60.pdf Size:850K _bruckewell

5N60
5N60

MS5N60 N-Channel Enhancement Mode Power MOSFET Description The MS5N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=650V typically @ Tj=150°

0.188. msb15n60.pdf Size:430K _bruckewell

5N60
5N60

Preliminary_MSB15N60 N-Channel Enhancement Mode Power MOSFET Description The MSB15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-263 package is universally preferred for all commercial-industrial applications Features • Low On Resista

0.189. msf15n60.pdf Size:915K _bruckewell

5N60
5N60

MSF15N60 N-Channel Enhancement Mode Power MOSFET Description The MSF15N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features • Low On Resistance • S

0.190. wfd5n60c.pdf Size:485K _winsemi

5N60
5N60

WFD5N60C WFD5N60C WFD5N60C WFD5N60C Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.5Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

0.191. wfd5n60b.pdf Size:487K _winsemi

5N60
5N60

WFD5N60B WFD5N60B WFD5N60B WFD5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.4Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

0.192. wfu5n60b.pdf Size:490K _winsemi

5N60
5N60

WFU5N60B WFU5N60B WFU5N60B WFU5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.4Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

0.193. wff5n60.pdf Size:519K _winsemi

5N60
5N60

WFF5N60 WFF5N60 WFF5N60 WFF5N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features ■ 4.5A,600V,RDS(on)(Max 2.2Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 16nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description General

0.194. wff15n60.pdf Size:422K _winsemi

5N60
5N60

WFF15N60 WFF15N60 WFF15N60 WFF15N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 15A,600V, R (Max0.52Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 36nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produce

0.195. wfu5n60.pdf Size:490K _winsemi

5N60
5N60

WFU5N60 WFU5N60 WFU5N60 WFU5N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.5Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced usi

0.196. wfp5n60.pdf Size:485K _winsemi

5N60
5N60

WFP5N60 WFP5N60 WFP5N60 WFP5N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.5Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced usi

0.197. wff5n60b.pdf Size:522K _winsemi

5N60
5N60

WFF5N60B WFF5N60B WFF5N60B WFF5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.4Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

0.198. wfp5n60b.pdf Size:527K _winsemi

5N60
5N60

WFP5N60B WFP5N60B WFP5N60B WFP5N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.4Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

0.199. wff5n60c.pdf Size:521K _winsemi

5N60
5N60

WFF5N60C WFF5N60C WFF5N60C WFF5N60C Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features � 4.5A,600V,R (Max2.5Ω)@V =10V DS(on) GS � Ultra-low Gate charge(Typical 15nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced

0.200. fhf5n60.pdf Size:229K _feihonltd

5N60
5N60

Free Datasheet http://www.Datasheet4U.com FHF5N60说明书 产品描述 FHF5N60为N沟道增强型高压功率MOS场 效应管。该产品广泛适用于AC-DC开关电源, DC-DC电源转换器,高压H桥PMW马达驱动。 产品特点 DS Ω DS DS DS ★ 5A,600V,R (on)(典型值)1.97 ★ 低电荷、低反向传输电容 ★ 开关速度快 极限值(TC=25℃) 参数

0.201. iqib75n60a3.pdf Size:230K _iqxprz

5N60
5N60

IQIB75N60A3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop-technology in Isolated SOT227 Package  Very high switching speed 1  Very low VCE(sat  Short circuit withstand time – 5 us  Designed for frequency converters and UPS  Very tight parameter distribution 3  High ruggedness, temperature stability - Parallel switching capability 2, 4  Pb-free lead finish

0.202. iqib75n60d3.pdf Size:170K _iqxprz

5N60
5N60

IQIB75N60D3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in Isolated SOT227 Package 1  High switching speed  Low V CE(sat)  Short circuit withstand time – 5 us  Designed for frequency converters and UPS  Very tight parameter distribution 3  High ruggedness, temperature stability 2, 4 - parallel switch

0.203. iqab75n60a1.pdf Size:229K _iqxprz

5N60
5N60

IQAB75N60A1 PRELIMINARY DATASHEET IGBT Trench & Field Stop technology in TO247 Package • Very high switching speed • Very low V CE(sat) • Short circuit withstand time - 5µs • Designed for frequency converters and UPS • Very tight parameter distribution • High ruggedness, temperature stability • Parallel switching capability • Pb-free lead finish; RoHS comp

0.204. iqab75n60d1.pdf Size:154K _iqxprz

5N60
5N60

IQAB75N60D1 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in TO-247 Package  Very high switching speed  Very low V CE(sat)  Short circuit withstand time - 5µs  Designed for frequency converters and UPS  Very tight parameter distribution  High ruggedness, temperature stable  Parallel switching capabilit

0.205. cs5n60d.pdf Size:155K _lzg

5N60
5N60

BRD5N60(CS5N60D) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25

0.206. cs5n60f.pdf Size:160K _lzg

5N60
5N60

BRF5N60(CS5N60F) N-CHANNEL MOSFET/N 沟道 MOS 晶体管 用途: 用于高功率 DC/DC 转换和功率开关。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. 特点: 低栅电荷,低反馈电容,开关速度快。 Features: Low gate charge, low crss, fast switching. 极限参数/Absolute maximum ratings(Ta=25

0.207. hfs5n60u.pdf Size:311K _semihow

5N60
5N60

May 2012 BVDSS = 600 V RDS(on) typ HFS5N60U ID = 4.5 A 600V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area

0.208. hfs5n60s.pdf Size:202K _semihow

5N60
5N60

Aug 2007 BVDSS = 600 V RDS(on) typ = 2.0 HFS5N60S ID = 4.5 A 600V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )

0.209. hfp5n60s.pdf Size:172K _semihow

5N60
5N60

Aug 2007 BVDSS = 600 V RDS(on) typ HFP5N60S ID = 4.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area Lower RDS(

0.210. hfd5n60s.pdf Size:205K _semihow

5N60
5N60

Sep 2009 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60S / HFU5N60S ID = 4.3 A 600V N-Channel MOSFET D-PAK I-PAK 2 2 FEATURES 1 1 3 2 3 Originative New Design HFD5N60S HFU5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ

0.211. hfd5n60u.pdf Size:210K _semihow

5N60
5N60

Jan 2014 BVDSS = 600 V RDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A 600V N-Channel MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

0.212. hfp5n60u.pdf Size:205K _semihow

5N60
5N60

May 2012 BVDSS = 600 V RDS(on) typ HFP5N60U ID = 4.5 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area L

0.213. hfw5n60s.pdf Size:175K _semihow

5N60
5N60

Sep 2009 BVDSS = 600 V RDS(on) typ HFW5N60S / HFI5N60S ID = 4.5 A 600V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW5N60S HFI5N60S Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Saf

0.214. wvm15n60.pdf Size:22K _shaanxi

5N60

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N60 Power MOSFET(N-channel) Transistor Features: 1. It’s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards: QZJ840611 3. Use for high speed switch, circuit of power source co

0.215. msk7d5n60f msk7d5n60t.pdf Size:618K _taitron

5N60
5N60

600V/7.5A N-Channel MOSFET MSK7D5N60T/F 600V/7.5A N-Channel MOSFET General Description • Fast switching time • Low on resistance, low gate charge • Excellent avalanche characteristics • Suitable for active power factor correction • Suitable for switching mode power supplies TO-220 Features • VDSS=600V, ID=7.5A; • Low Drain-Source ON Resistance: RDS(ON) =

0.216. msu5n60.pdf Size:475K _taitron

5N60
5N60

600V/4.5A POWER MOSFET (N-Channel) MSU5N60 600V/4.5A Power MOSFET (N-Channel) General Description • MSU5N60 is a N-Channel enhancement mode power MOSFET with advanced TO-220 technology. It is designed to have better characteristics, such as fast switching time, low gate charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and commutati

0.217. msk4d5n60f msk4d5n60t.pdf Size:617K _taitron

5N60
5N60

600V/4.5A N-Channel MOSFET MSK4D5N60T/F 600V/4.5A N-Channel MOSFET General Description • Fast switching time • Low on resistance, low gate charge • Excellent avalanche characteristics • Suitable for switching mode power supplies TO-220 Features • VDSS=600V, ID=4.5A; • Low Drain-Source ON Resistance: RDS(ON) =2.5 Ω @ VGS=10V • Qg(typ.)=17nC • RoHS C

0.218. tsu45n60.pdf Size:1583K _thinkisemi

5N60
5N60

 TSU45N60 ® Table 2. Thermal Characteristic Symbol Parameter Value Unit RJC Thermal Resistance,Junction-to-Case 2.7 ℃/W Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 60 V IDSS Zero Gate Voltage Drain Current(Tc=25℃) VDS=60V,VGS=0V 1 μA

0.219. tmd5n60z tmu5n60z.pdf Size:461K _trinnotech

5N60
5N60

TMD5N60Z(G)/TMU5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)MAX  Low gate charge 600V 4.2A <2.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK I-PAK Device Package Marking Remark TMD5N60Z / TMU5N60Z D-PAK/I-PAK TMD5N60Z / TMU5N60Z RoHS TMD5N60ZG / TMU5N60ZG D-PAK/I-PAK TMD5

0.220. tmd5n60az tmu5n60az.pdf Size:457K _trinnotech

5N60
5N60

TMD5N60AZ(G)/TMU5N60AZ(G) N-channel MOSFET Features  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.2A < 2.1W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK I-PAK Device Package Marking Remark TMD5N60AZ / TMU5N60AZ D-PAK/I-PAK TMD5N60AZ / TMU5N60AZ RoHS TMD5N

0.221. tmp5n60z tmpf5n60z.pdf Size:615K _trinnotech

5N60
5N60

TMP5N60Z(G)/TMPF5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 600V 4.2A <2.1W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification Device Package Marking Remark TMP5N60Z / TMPF5N60Z TO-220 / TO-220F TMP5N60Z / TMPF5N60Z RoHS TMPF5N60ZG / TMPF5N60ZG TO-220 / TO-220F TMPF5N60

0.222. tmp5n60az tmpf5n60az.pdf Size:610K _trinnotech

5N60
5N60

TMP5N60AZ(G)/TMPF5N60AZ(G) Features N-channel MOSFET  Low gate charge BVDSS ID RDS(on)  100% avalanche tested 600V 4.2A < 2.1W  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance Device Package Marking Remark TMP5N60AZ / TMPF5N60AZ TO-220 / TO-220F TMP5N60AZ / TMPF5N60AZ RoHS TMP5N60AZG

0.223. bt15n60a9f.pdf Size:102K _wuxi_china

5N60
5N60

Silicon FS Planar IGBT R ○ BT15N60A9F General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25℃) 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features: FS Planar Technology, Positive temperature coeff

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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