BLD6G21L-50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLD6G21L-50
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 53 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
|Id|ⓘ - Corriente continua de drenaje: 10.2 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.736 Ohm
Paquete / Cubierta: SOT1130A
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BLD6G21L-50 Datasheet (PDF)
bld6g21l-50 bld6g21ls-50.pdf

BLD6G21L-50; BLD6G21LS-50TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistorRev. 2 17 August 2010 Product data sheet1. Product profile1.1 General descriptionThe BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications
bld6g22l-50 bld6g22ls-50.pdf

BLD6G22L-50; BLD6G22LS-50W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistorRev. 3 17 August 2010 Product data sheet1. Product profile1.1 General descriptionThe BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequ
Otros transistores... BLA1011-200 , BLA1011-200R , BLA1011-300 , BLA1011S-200 , BLA1011S-200R , BLA6G1011-200R , BLA6H0912-500 , BLA6H1011-600 , RFP50N06 , BLD6G21LS-50 , BLD6G22L-50 , BLD6G22LS-50 , BLF1043 , BLF1046 , BLF145 , BLF147 , BLF175 .
History: DMN6070SFCL | STD10PF06-1 | CEDM7001VL | PM557BA | CED12N10L | IRFPE30PBF | SI8810
History: DMN6070SFCL | STD10PF06-1 | CEDM7001VL | PM557BA | CED12N10L | IRFPE30PBF | SI8810



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