BLD6G21L-50 Specs and Replacement

Type Designator: BLD6G21L-50

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Id| ⓘ - Maximum Drain Current: 10.2 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.736 Ohm

Package: SOT1130A

BLD6G21L-50 substitution

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BLD6G21L-50 datasheet

 ..1. Size:378K  philips
 bld6g21l-50 bld6g21ls-50.pdf pdf_icon

BLD6G21L-50

BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev. 2 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXP s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications ... See More ⇒

 8.1. Size:363K  philips
 bld6g22l-50 bld6g22ls-50.pdf pdf_icon

BLD6G21L-50

BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequ... See More ⇒

Detailed specifications: BLA1011-200, BLA1011-200R, BLA1011-300, BLA1011S-200, BLA1011S-200R, BLA6G1011-200R, BLA6H0912-500, BLA6H1011-600, AON7410, BLD6G21LS-50, BLD6G22L-50, BLD6G22LS-50, BLF1043, BLF1046, BLF145, BLF147, BLF175

Keywords - BLD6G21L-50 MOSFET specs

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