All MOSFET. BLD6G21L-50 Datasheet

 

BLD6G21L-50 Datasheet and Replacement


   Type Designator: BLD6G21L-50
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Id|ⓘ - Maximum Drain Current: 10.2 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.736 Ohm
   Package: SOT1130A
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BLD6G21L-50 Datasheet (PDF)

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 bld6g21l-50 bld6g21ls-50.pdf pdf_icon

BLD6G21L-50

BLD6G21L-50; BLD6G21LS-50TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistorRev. 2 17 August 2010 Product data sheet1. Product profile1.1 General descriptionThe BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications

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BLD6G21L-50

BLD6G22L-50; BLD6G22LS-50W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistorRev. 3 17 August 2010 Product data sheet1. Product profile1.1 General descriptionThe BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequ

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBZMB12N65 | HLML6401 | STC4301D | DMP3050LSS | YJL2305B | CJ3401 | AP85T03GH-HF

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