BLF147 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLF147
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Paquete / Cubierta: SOT121B

Búsqueda de reemplazo de MOSFET BLF147

BLF147 Datasheet (PDF)

..1. Size:275K philips
blf147 n.pdf

BLF147VHF power MOS transistorRev. 06 5 December 2006 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http:/

..2. Size:68K philips
blf147.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLF147VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF147FEATURES PIN CONFIGURATION High power gain Low intermodulation distortionook, halfpage43 Easy power control Good thermal stability Withstands full load mismatch.dDESCRIPTION

9.1. Size:279K philips
blf145 n.pdf

BLF145HF power MOS transistorRev. 04 5 January 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http://w

9.2. Size:72K philips
blf145.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLF145HF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationHF power MOS transistor BLF145FEATURES PIN CONFIGURATION High power gaink, halfpage Low noise figure1 4 Good thermal stability Withstands full load mismatch.dDESCRIPTIONgSilicon N-channel enhancementsMBB

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