Справочник MOSFET. BLF147

 

BLF147 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BLF147
   Тип транзистора: LDMOS
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
   Тип корпуса: SOT121B

 Аналог (замена) для BLF147

 

 

BLF147 Datasheet (PDF)

 ..1. Size:275K  philips
 blf147 n.pdf

BLF147 BLF147

BLF147VHF power MOS transistorRev. 06 5 December 2006 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http:/

 ..2. Size:68K  philips
 blf147.pdf

BLF147 BLF147

DISCRETE SEMICONDUCTORSDATA SHEETBLF147VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationVHF power MOS transistor BLF147FEATURES PIN CONFIGURATION High power gain Low intermodulation distortionook, halfpage43 Easy power control Good thermal stability Withstands full load mismatch.dDESCRIPTION

 9.1. Size:279K  philips
 blf145 n.pdf

BLF147 BLF147

BLF145HF power MOS transistorRev. 04 5 January 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.http://w

 9.2. Size:72K  philips
 blf145.pdf

BLF147 BLF147

DISCRETE SEMICONDUCTORSDATA SHEETBLF145HF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationHF power MOS transistor BLF145FEATURES PIN CONFIGURATION High power gaink, halfpage Low noise figure1 4 Good thermal stability Withstands full load mismatch.dDESCRIPTIONgSilicon N-channel enhancementsMBB

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