BLF147. Аналоги и основные параметры

Наименование производителя: BLF147

Тип транзистора: LDMOS

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 28 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm

Тип корпуса: SOT121B

Аналог (замена) для BLF147

- подборⓘ MOSFET транзистора по параметрам

 

BLF147 даташит

 ..1. Size:275K  philips
 blf147 n.pdf pdf_icon

BLF147

BLF147 VHF power MOS transistor Rev. 06 5 December 2006 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http /

 ..2. Size:68K  philips
 blf147.pdf pdf_icon

BLF147

DISCRETE SEMICONDUCTORS DATA SHEET BLF147 VHF power MOS transistor September 1992 Product specification Philips Semiconductors Product specification VHF power MOS transistor BLF147 FEATURES PIN CONFIGURATION High power gain Low intermodulation distortion ook, halfpage 43 Easy power control Good thermal stability Withstands full load mismatch. d DESCRIPTION

 9.1. Size:279K  philips
 blf145 n.pdf pdf_icon

BLF147

BLF145 HF power MOS transistor Rev. 04 5 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http //w

 9.2. Size:72K  philips
 blf145.pdf pdf_icon

BLF147

DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor September 1992 Product specification Philips Semiconductors Product specification HF power MOS transistor BLF145 FEATURES PIN CONFIGURATION High power gain k, halfpage Low noise figure 1 4 Good thermal stability Withstands full load mismatch. d DESCRIPTION g Silicon N-channel enhancement s MBB

ПОКАЗАТЬ ЕЩЁ

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