BLF175 Todos los transistores

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 blf175.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF175 HF/VHF power MOS transistor Product specification 2003 Jul 22 Supersedes data of 1997 Dec 15 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 FEATURES PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control Good thermal stability ook, halfpage Withstands

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 blf175 cnv 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BLF175 HF/VHF power MOS transistor September 1992 Product specification Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 FEATURES PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control Good thermal stability ook, halfpage Withstands full load mismatch 1 4 Gold m

 9.1. Size:96K  philips
 blf177 cnv 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor September 1992 Product specification File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 FEATURES PIN CONFIGURATION High power gain Low intermodulation distortion 14 andbook, halfpage Easy power control Good thermal stability

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 blf177.pdf

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 blf177 n.pdf

BLF177 HF/VHF power MOS transistor Rev. 06 24 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. htt

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 blf178p.pdf

BLF178P Power LDMOS transistor Rev. 2 16 February 2012 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band. Table 1. Application information Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 108 50 1000 26 75 pulsed RF 108 50 1200 28.5 75 1.2 Features