BLF175 - Даташиты. Аналоги. Основные параметры

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF175HF/VHF power MOS transistorProduct specification 2003 Jul 22Supersedes data of 1997 Dec 15Philips Semiconductors Product specificationHF/VHF power MOS transistor BLF175FEATURES PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control Good thermal stability ook, halfpage Withstands

DISCRETE SEMICONDUCTORSDATA SHEETBLF175HF/VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationHF/VHF power MOS transistor BLF175FEATURES PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control Good thermal stability ook, halfpage Withstands full load mismatch1 4 Gold m

DISCRETE SEMICONDUCTORSDATA SHEETBLF177HF/VHF power MOS transistorSeptember 1992Product specificationFile under Discrete Semiconductors, SC08aPhilips Semiconductors Product specificationHF/VHF power MOS transistor BLF177FEATURES PIN CONFIGURATION High power gain Low intermodulation distortion14andbook, halfpage Easy power control Good thermal stability

DISCRETE SEMICONDUCTORSDATA SHEETM3D060BLF177HF/VHF power MOS transistor1998 Jul 02Product specificationSupersedes data of September 1992Philips Semiconductors Product specificationHF/VHF power MOS transistor BLF177FEATURES PIN CONFIGURATION High power gain Low intermodulation distortionandbook, halfpage Easy power control 43 Good thermal stability

BLF177HF/VHF power MOS transistorRev. 06 24 January 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links asshown below.htt

BLF178PPower LDMOS transistorRev. 2 16 February 2012 Product data sheet1. Product profile1.1 General descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.Table 1. Application informationTest signal f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 108 50 1000 26 75pulsed RF 108 50 1200 28.5 751.2 Features