BLF178P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLF178P

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1000 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Id|ⓘ - Corriente continua de drenaje: 88 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: SOT539A

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BLF178P datasheet

 ..1. Size:524K  nxp
blf178p.pdf pdf_icon

BLF178P

BLF178P Power LDMOS transistor Rev. 2 16 February 2012 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band. Table 1. Application information Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 108 50 1000 26 75 pulsed RF 108 50 1200 28.5 75 1.2 Features

 9.1. Size:96K  philips
blf177 cnv 2.pdf pdf_icon

BLF178P

DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor September 1992 Product specification File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 FEATURES PIN CONFIGURATION High power gain Low intermodulation distortion 14 andbook, halfpage Easy power control Good thermal stability

 9.2. Size:132K  philips
blf175.pdf pdf_icon

BLF178P

DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF175 HF/VHF power MOS transistor Product specification 2003 Jul 22 Supersedes data of 1997 Dec 15 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF175 FEATURES PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control Good thermal stability ook, halfpage Withstands

 9.3. Size:117K  philips
blf177.pdf pdf_icon

BLF178P

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