BLF2425M7LS250P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLF2425M7LS250P

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V

|Id|ⓘ - Corriente continua de drenaje: 39 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SOT539B

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BLF2425M7LS250P datasheet

 4.1. Size:300K  nxp
blf2425m7l250p 2425m7ls250p.pdf pdf_icon

BLF2425M7LS250P

BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 4 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high perfor

 8.1. Size:86K  philips
blf242.pdf pdf_icon

BLF2425M7LS250P

DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF242 HF-VHF power MOS transistor Product specification 2003 Oct 13 Supersedes data of 1997 Dec 17 Philips Semiconductors Product specification HF-VHF power MOS transistor BLF242 FEATURES PIN CONFIGURATION High power gain Low noise handbook, halfpage Easy power control 1 4 Good thermal stability Withstands full load

 8.2. Size:66K  philips
blf242 cnv 2.pdf pdf_icon

BLF2425M7LS250P

DISCRETE SEMICONDUCTORS DATA SHEET BLF242 HF/VHF power MOS transistor September 1992 Product specification Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 FEATURES PIN CONFIGURATION High power gain halfpage Low noise 1 4 Easy power control Good thermal stability Withstands full load mismatch d Gold metallization ensures

Otros transistores... BLF147, BLF175, BLF177, BLF178P, BLF202, BLF2043F, BLF242, BLF2425M7L250P, 4N60, BLF244, BLF245, BLF245B, BLF246, BLF246B, BLF248, BLF278, BLF346