BLF2425M7LS250P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLF2425M7LS250P
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Paquete / Cubierta: SOT539B

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BLF2425M7LS250P Datasheet (PDF)

4.1. Size:300K nxp
blf2425m7l250p 2425m7ls250p.pdf

BLF2425M7L250P; BLF2425M7LS250PPower LDMOS transistorRev. 4 12 July 2013 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high perfor

8.1. Size:86K philips
blf242.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF242HF-VHF power MOS transistorProduct specification 2003 Oct 13Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationHF-VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gain Low noisehandbook, halfpage Easy power control1 4 Good thermal stability Withstands full load

8.2. Size:66K philips
blf242 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLF242HF/VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationHF/VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gainhalfpage Low noise1 4 Easy power control Good thermal stability Withstands full load mismatchd Gold metallization ensures

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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