All MOSFET. BLF2425M7LS250P Datasheet

 

BLF2425M7LS250P Datasheet and Replacement


   Type Designator: BLF2425M7LS250P
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 28 V
   |Id| ⓘ - Maximum Drain Current: 39 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT539B
 

 BLF2425M7LS250P substitution

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BLF2425M7LS250P Datasheet (PDF)

 4.1. Size:300K  nxp
blf2425m7l250p 2425m7ls250p.pdf pdf_icon

BLF2425M7LS250P

BLF2425M7L250P; BLF2425M7LS250PPower LDMOS transistorRev. 4 12 July 2013 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high perfor

 8.1. Size:86K  philips
blf242.pdf pdf_icon

BLF2425M7LS250P

DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF242HF-VHF power MOS transistorProduct specification 2003 Oct 13Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationHF-VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gain Low noisehandbook, halfpage Easy power control1 4 Good thermal stability Withstands full load

 8.2. Size:66K  philips
blf242 cnv 2.pdf pdf_icon

BLF2425M7LS250P

DISCRETE SEMICONDUCTORSDATA SHEETBLF242HF/VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationHF/VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gainhalfpage Low noise1 4 Easy power control Good thermal stability Withstands full load mismatchd Gold metallization ensures

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFE110 | IXFN110N20

Keywords - BLF2425M7LS250P MOSFET datasheet

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