BLF2425M7LS250P
MOSFET. Datasheet pdf. Equivalent
Type Designator: BLF2425M7LS250P
Type of Transistor: LDMOS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 28
V
|Id|ⓘ - Maximum Drain Current: 39
A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package: SOT539B
BLF2425M7LS250P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLF2425M7LS250P
Datasheet (PDF)
4.1. Size:300K nxp
blf2425m7l250p 2425m7ls250p.pdf
BLF2425M7L250P; BLF2425M7LS250PPower LDMOS transistorRev. 4 12 July 2013 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high perfor
8.1. Size:86K philips
blf242.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D065BLF242HF-VHF power MOS transistorProduct specification 2003 Oct 13Supersedes data of 1997 Dec 17Philips Semiconductors Product specificationHF-VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gain Low noisehandbook, halfpage Easy power control1 4 Good thermal stability Withstands full load
8.2. Size:66K philips
blf242 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLF242HF/VHF power MOS transistorSeptember 1992Product specificationPhilips Semiconductors Product specificationHF/VHF power MOS transistor BLF242FEATURES PIN CONFIGURATION High power gainhalfpage Low noise1 4 Easy power control Good thermal stability Withstands full load mismatchd Gold metallization ensures
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