BLF404 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLF404
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12.5 V
   |Id|ⓘ - Corriente continua de drenaje: 1.5 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm
Paquete / Cubierta: SOT409A

Búsqueda de reemplazo de MOSFET BLF404

BLF404 Datasheet (PDF)

..1. Size:93K philips
blf404.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D175BLF404UHF power MOS transistorProduct specification 2003 Sep 26Supersedes data of 1998 Jan 29Philips Semiconductors Product specificationUHF power MOS transistor BLF404FEATURES PINNING - SOT409A High power gainPIN DESCRIPTION Easy power control1, 8 source Gold metallization2, 3 gate Good thermal stability4, 5

..2. Size:94K philips
blf404 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D175BLF404UHF power MOS transistor1998 Jan 29Product specificationSupersedes data of 1997 Oct 28Philips Semiconductors Product specificationUHF power MOS transistor BLF404FEATURES PINNING High power gainPIN DESCRIPTION Easy power control1, 8 source Gold metallization2, 3 gate Good thermal stability4, 5 source

9.1. Size:318K sanyo
blf4037.pdf

BFL4037Ordering number : ENA1831SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4037ApplicationsFeatures ON-resistance RDS(on)=0.33 (typ.) Input capacitance Ciss=1200pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 V

9.2. Size:318K sanyo
blf4036.pdf

BFL4036Ordering number : ENA1830SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4036ApplicationsFeatures ON-resistance RDS(on)=0.4 (typ.) Input capacitance Ciss=1000pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 V

9.3. Size:305K sanyo
bfl4007 blf4007.pdf

BFL4007Ordering number : ENA1689SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4007ApplicationsFeatures Reverse recovery time trr=95ns (typ) ON-resistance RDS(on)=0.52 (typ) Input capacitance Ciss=1200pF (typ) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings

9.4. Size:283K sanyo
blf4001.pdf

BFL4001Ordering number : ENA1638SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4001ApplicationsFeatures Low ON-resistance. High-speed switching. Avalanche resistance guarantee. 10V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 900

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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