BLF404 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BLF404
Тип транзистора: LDMOS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.5 A
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.7 Ohm
Тип корпуса: SOT409A
BLF404 Datasheet (PDF)
blf404.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D175BLF404UHF power MOS transistorProduct specification 2003 Sep 26Supersedes data of 1998 Jan 29Philips Semiconductors Product specificationUHF power MOS transistor BLF404FEATURES PINNING - SOT409A High power gainPIN DESCRIPTION Easy power control1, 8 source Gold metallization2, 3 gate Good thermal stability4, 5
blf404 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D175BLF404UHF power MOS transistor1998 Jan 29Product specificationSupersedes data of 1997 Oct 28Philips Semiconductors Product specificationUHF power MOS transistor BLF404FEATURES PINNING High power gainPIN DESCRIPTION Easy power control1, 8 source Gold metallization2, 3 gate Good thermal stability4, 5 source
blf4037.pdf
BFL4037Ordering number : ENA1831SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4037ApplicationsFeatures ON-resistance RDS(on)=0.33 (typ.) Input capacitance Ciss=1200pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 V
blf4036.pdf
BFL4036Ordering number : ENA1830SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4036ApplicationsFeatures ON-resistance RDS(on)=0.4 (typ.) Input capacitance Ciss=1000pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 V
bfl4007 blf4007.pdf
BFL4007Ordering number : ENA1689SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4007ApplicationsFeatures Reverse recovery time trr=95ns (typ) ON-resistance RDS(on)=0.52 (typ) Input capacitance Ciss=1200pF (typ) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings
blf4001.pdf
BFL4001Ordering number : ENA1638SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBFL4001ApplicationsFeatures Low ON-resistance. High-speed switching. Avalanche resistance guarantee. 10V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 900
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918