BLF574 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLF574
Tipo de FET: LDMOS
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 500 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
|Id|ⓘ - Corriente continua de drenaje: 56 A
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.25 VRds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
Paquete / Cubierta: SOT539A
Búsqueda de reemplazo de MOSFET BLF574
BLF574 Datasheet (PDF)
blf574.pdf
BLF574HF / VHF power LDMOS transistorRev. 02 24 February 2009 Product data sheet1. Product profile1.1 General descriptionA 500 W to 600 W LDMOS power transistor for broadcast applications and industrialapplications in the HF to 500 MHz band.Table 1. Application informationMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 500 26.5 70108 50 600 27.5 73CA
blf578.pdf
BLF578Power LDMOS transistorRev. 02 4 February 2010 Product data sheet1. Product profile1.1 General descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.Table 1. Application information Mode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 108 50 1000 26 75pulsed RF 225 50 1200 24 71CAUTIONT
blf571.pdf
BLF571HF / VHF power LDMOS transistorRev. 02 24 February 2009 Product data sheet1. Product profile1.1 General descriptionA 20 W LDMOS RF transistor for broadcast applications and industrial applications in theHF and VHF band.Table 1. Production test performanceMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 20 27.5 70CAUTIONThis device is sensitive t
blf573 blf573s.pdf
BLF573; BLF573SHF / VHF power LDMOS transistorRev. 3 8 July 2010 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.Table 1. Production test informationMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 300 27.2
blf573s.pdf
BLF573SHF / VHF power LDMOS transistorRev. 02 17 February 2009 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientificand medical applications in the HF to 500 MHz band.Table 1. Production test informationMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 300 27.2 70
blf578xr blf578xrs.pdf
BLF578XR; BLF578XRSPower LDMOS transistorRev. 4 12 July 2013 Product data sheet1. Product profile1.1 General descriptionA 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applic
Otros transistores... BLF521 , BLF542 , BLF544 , BLF546 , BLF548 , BLF571 , BLF573 , BLF573S , AON6380 , BLF578 , BLF578XR , BLF642 , BLF645 , BLF647 , BLF6G10-135RN , BLF6G10-160RN , BLF6G10-200RN .
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