BLF574 Todos los transistores

 ..1. Size:171K  philips
 blf574.pdf

BLF574 HF / VHF power LDMOS transistor Rev. 02 24 February 2009 Product data sheet 1. Product profile 1.1 General description A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 225 50 500 26.5 70 108 50 600 27.5 73 CA

 9.1. Size:320K  philips
 blf578.pdf

BLF578 Power LDMOS transistor Rev. 02 4 February 2010 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 108 50 1000 26 75 pulsed RF 225 50 1200 24 71 CAUTION T

 9.2. Size:105K  philips
 blf571.pdf

BLF571 HF / VHF power LDMOS transistor Rev. 02 24 February 2009 Product data sheet 1. Product profile 1.1 General description A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band. Table 1. Production test performance Mode of operation f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 225 50 20 27.5 70 CAUTION This device is sensitive t

 9.3. Size:331K  philips
 blf573 blf573s.pdf

BLF573; BLF573S HF / VHF power LDMOS transistor Rev. 3 8 July 2010 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2

 9.4. Size:85K  philips
 blf573s.pdf

BLF573S HF / VHF power LDMOS transistor Rev. 02 17 February 2009 Product data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Table 1. Production test information Mode of operation f VDS PL Gp D (MHz) (V) (W) (dB) (%) CW 225 50 300 27.2 70

 9.5. Size:314K  nxp
 blf578xr blf578xrs.pdf

BLF578XR; BLF578XRS Power LDMOS transistor Rev. 4 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applic