All MOSFET. BLF574 Datasheet

 

BLF574 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLF574
   Type of Transistor: LDMOS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.25 V
   |Id|ⓘ - Maximum Drain Current: 56 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT539A

 BLF574 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLF574 Datasheet (PDF)

 ..1. Size:171K  philips
blf574.pdf

BLF574
BLF574

BLF574HF / VHF power LDMOS transistorRev. 02 24 February 2009 Product data sheet1. Product profile1.1 General descriptionA 500 W to 600 W LDMOS power transistor for broadcast applications and industrialapplications in the HF to 500 MHz band.Table 1. Application informationMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 500 26.5 70108 50 600 27.5 73CA

 9.1. Size:320K  philips
blf578.pdf

BLF574
BLF574

BLF578Power LDMOS transistorRev. 02 4 February 2010 Product data sheet1. Product profile1.1 General descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.Table 1. Application information Mode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 108 50 1000 26 75pulsed RF 225 50 1200 24 71CAUTIONT

 9.2. Size:105K  philips
blf571.pdf

BLF574
BLF574

BLF571HF / VHF power LDMOS transistorRev. 02 24 February 2009 Product data sheet1. Product profile1.1 General descriptionA 20 W LDMOS RF transistor for broadcast applications and industrial applications in theHF and VHF band.Table 1. Production test performanceMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 20 27.5 70CAUTIONThis device is sensitive t

 9.3. Size:331K  philips
blf573 blf573s.pdf

BLF574
BLF574

BLF573; BLF573SHF / VHF power LDMOS transistorRev. 3 8 July 2010 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.Table 1. Production test informationMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 300 27.2

 9.4. Size:85K  philips
blf573s.pdf

BLF574
BLF574

BLF573SHF / VHF power LDMOS transistorRev. 02 17 February 2009 Product data sheet1. Product profile1.1 General descriptionA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientificand medical applications in the HF to 500 MHz band.Table 1. Production test informationMode of operation f VDS PL Gp D(MHz) (V) (W) (dB) (%)CW 225 50 300 27.2 70

 9.5. Size:314K  nxp
blf578xr blf578xrs.pdf

BLF574
BLF574

BLF578XR; BLF578XRSPower LDMOS transistorRev. 4 12 July 2013 Product data sheet1. Product profile1.1 General descriptionA 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applic

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK1917-MR

 

 
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