BLF647 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLF647

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm

Encapsulados: SOT540A

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BLF647 datasheet

 ..1. Size:127K  philips
 blf647.pdf pdf_icon

BLF647

DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification 2001 Nov 27 Supersedes data of 2001 Aug 02 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 FEATURES PINNING - SOT540A High power gain PIN DESCRIPTION Easy power control 1 drain 1 Excellent ruggedness 2 drain 2 Source on underside elimi

 9.1. Size:164K  philips
 blf645.pdf pdf_icon

BLF647

BLF645 Broadband power LDMOS transistor Rev. 01 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital

 9.2. Size:555K  nxp
 blf642.pdf pdf_icon

BLF647

BLF642 Broadband power LDMOS transistor Rev. 2 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications

Otros transistores... BLF571, BLF573, BLF573S, BLF574, BLF578, BLF578XR, BLF642, BLF645, IRLB3034, BLF6G10-135RN, BLF6G10-160RN, BLF6G10-200RN, BLF6G10-45, BLF6G10L-260PRN, BLF6G10L-40BRN, BLF6G10LS-135RN, BLF6G10LS-160RN