BLF647 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLF647
   Tipo de FET: LDMOS
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 28 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Paquete / Cubierta: SOT540A

Búsqueda de reemplazo de MOSFET BLF647

BLF647 Datasheet (PDF)

..1. Size:127K philips
blf647.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D392BLF647UHF power LDMOS transistorProduct specification 2001 Nov 27Supersedes data of 2001 Aug 02Philips Semiconductors Product specificationUHF power LDMOS transistor BLF647FEATURES PINNING - SOT540A High power gainPIN DESCRIPTION Easy power control1 drain 1 Excellent ruggedness2 drain 2 Source on underside elimi

9.1. Size:164K philips
blf645.pdf

BLF645Broadband power LDMOS transistorRev. 01 27 January 2010 Product data sheet1. Product profile1.1 General descriptionA 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital

9.2. Size:555K nxp
blf642.pdf

BLF642Broadband power LDMOS transistorRev. 2 22 July 2011 Product data sheet1. Product profile1.1 General descriptionA 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: