BLF647 LDMOS Datasheet: N-Ch, 28V, 18A. Full specification with pinout and replacement list

BLF647 Specs and Replacement

Type Designator: BLF647

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 28 V

|Id| ⓘ - Maximum Drain Current: 18 A

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SOT540A

BLF647 substitution

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BLF647 datasheet

..1. Size:127K philips
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DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification 2001 Nov 27 Supersedes data of 2001 Aug 02 Philips Semiconductors Product specification UHF power LDMOS transistor BLF647 FEATURES PINNING - SOT540A High power gain PIN DESCRIPTION Easy power control 1 drain 1 Excellent ruggedness 2 drain 2 Source on underside elimi... See More ⇒

9.1. Size:164K philips
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BLF645 Broadband power LDMOS transistor Rev. 01 27 January 2010 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital... See More ⇒

9.2. Size:555K nxp
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BLF642 Broadband power LDMOS transistor Rev. 2 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications... See More ⇒

Detailed specifications: BLF571 , BLF573 , BLF573S , BLF574 , BLF578 , BLF578XR , BLF642 , BLF645 , IRLB3034 , BLF6G10-135RN , BLF6G10-160RN , BLF6G10-200RN , BLF6G10-45 , BLF6G10L-260PRN , BLF6G10L-40BRN , BLF6G10LS-135RN , BLF6G10LS-160RN .