BLF647 Datasheet and Replacement

DISCRETE SEMICONDUCTORSDATA SHEETM3D392BLF647UHF power LDMOS transistorProduct specification 2001 Nov 27Supersedes data of 2001 Aug 02Philips Semiconductors Product specificationUHF power LDMOS transistor BLF647FEATURES PINNING - SOT540A High power gainPIN DESCRIPTION Easy power control1 drain 1 Excellent ruggedness2 drain 2 Source on underside elimi

BLF645Broadband power LDMOS transistorRev. 01 27 January 2010 Product data sheet1. Product profile1.1 General descriptionA 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital

BLF642Broadband power LDMOS transistorRev. 2 22 July 2011 Product data sheet1. Product profile1.1 General descriptionA 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications