BLF6G10-160RN Todos los transistores

 ..1. Size:154K  philips
 blf6g10-160rn blf6g10ls-160rn.pdf

BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

 5.1. Size:145K  philips
 blf6g10-135rn blf6g10ls-135rn.pdf

BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

 6.1. Size:161K  philips
 blf6g10-200rn blf6g10ls-200rn.pdf

BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

 6.2. Size:169K  nxp
 blf6g10-45.pdf

BLF6G10-45 Power LDMOS transistor Rev. 3 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz)