BLF6G10-160RN LDMOS Datasheet: N-Ch, 32V, 39A. Full specification with pinout and replacement list

BLF6G10-160RN Specs and Replacement

Type Designator: BLF6G10-160RN

Type of Transistor: LDMOS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 32 V

|Id| ⓘ - Maximum Drain Current: 39 A

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOT502A

BLF6G10-160RN substitution

- MOSFET ⓘ Cross-Reference Search

BLF6G10-160RN datasheet

..1. Size:154K philips
blf6g10-160rn blf6g10ls-160rn.pdf pdf_icon

BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G... See More ⇒

5.1. Size:145K philips
blf6g10-135rn blf6g10ls-135rn.pdf pdf_icon

BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G... See More ⇒

6.1. Size:161K philips
blf6g10-200rn blf6g10ls-200rn.pdf pdf_icon

BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G... See More ⇒

6.2. Size:169K nxp
blf6g10-45.pdf pdf_icon

BLF6G10-45 Power LDMOS transistor Rev. 3 11 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz) ... See More ⇒

Detailed specifications: BLF573S , BLF574 , BLF578 , BLF578XR , BLF642 , BLF645 , BLF647 , BLF6G10-135RN , IRFB7545 , BLF6G10-200RN , BLF6G10-45 , BLF6G10L-260PRN , BLF6G10L-40BRN , BLF6G10LS-135RN , BLF6G10LS-160RN , BLF6G10LS-200RN , BLF6G10LS-260PRN .