BLF6G10L-260PRN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLF6G10L-260PRN

Tipo de FET: LDMOS

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 260 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 28 V

|Id|ⓘ - Corriente continua de drenaje: 64 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SOT539A

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BLF6G10L-260PRN datasheet

 0.1. Size:345K  philips
 blf6g10l-260prn ls-260prn.pdf pdf_icon

BLF6G10L-260PRN

BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV)

 5.1. Size:272K  nxp
 blf6g10l-40brn.pdf pdf_icon

BLF6G10L-260PRN

BLF6G10L-40BRN Power LDMOS transistor Rev. 3 16 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz) (V)

 6.1. Size:154K  philips
 blf6g10-160rn blf6g10ls-160rn.pdf pdf_icon

BLF6G10L-260PRN

BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

 6.2. Size:145K  philips
 blf6g10-135rn blf6g10ls-135rn.pdf pdf_icon

BLF6G10L-260PRN

BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

MOSTRAR MÁS

Otros transistores... BLF578XR, BLF642, BLF645, BLF647, BLF6G10-135RN, BLF6G10-160RN, BLF6G10-200RN, BLF6G10-45, EMB04N03H, BLF6G10L-40BRN, BLF6G10LS-135RN, BLF6G10LS-160RN, BLF6G10LS-200RN, BLF6G10LS-260PRN, BLF6G10S-45, BLF6G13L-250P, BLF6G13LS-250P